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US 12,127,415 B2Granted
Manufacturing method for capacitor structure, capacitor structure and memory
AssigneeChangxin Memory Technologies, Inc.
InventorsXingsong Su, Weiping Bai, Mengkang Yu, Lianhong Wang
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Abstract
A capacitor structure includes two electrodes arranged oppositely and a dielectric layer located between the two electrodes, wherein the dielectric layer includes at least two perovskite layers stacked; an amorphous layer is provided between every two adjacent perovskite layers; two outermost perovskite layers of the at least two perovskite layers are in contact with the two electrodes, respectively.
Claims14
A capacitor structure, comprising
- two electrodes arranged oppositely and a dielectric layer located between the two electrodes, wherein
- the dielectric layer comprises at least two perovskite layers stacked;
- an amorphous layer is provided between every two adjacent perovskite layers;
- two outermost perovskite layers of the at least two perovskite layers are in contact with the two electrodes, respectively;
- at least one of the two outermost perovskite layers comprises two sub-layers;
- and
- one of the two sub-layers is a doped perovskite layer in contact with the electrode, and the other of the two sub-layers is an undoped perovskite layer.
4 more elements
A manufacturing method for capacitor structure, comprising:
- depositing a first sub-layer on the first electrode, the first sub-layer being a doped perovskite layer;
- and
- depositing a second sub-layer on the first sub-layer, the second sub-layer being an undoped perovskite layer;
- and the first perovskite layer being composed of the first sub-layer and the second sub-layer
- depositing an intermediate layer on the first perovskite layer, the intermediate layer comprising an amorphous layer;
- depositing a second perovskite layer on the intermediate layer, and a dielectric layer being composed of the first perovskite layer, the intermediate layer and the second perovskite layer;
- and
- depositing a second electrode on the dielectric layer.
5 more elements
A manufacturing method for capacitor structure, comprising:
- depositing a first perovskite layer on a first electrode;
- depositing an intermediate layer on the first perovskite layer, the intermediate layer comprising an amorphous layer;
- depositing a second perovskite layer on the intermediate layer, and a dielectric layer being composed of the first perovskite layer, the intermediate layer and the second perovskite layer;
- and
- depositing a second electrode on the dielectric layer;
- wherein
- the depositing a second perovskite layer on the intermediate layer comprises:
- depositing a third sub-layer on the intermediate layer, the third sub-layer being an undoped perovskite layer;
- and
- depositing a fourth sub-layer on the third sub-layer, the fourth sub-layer being a doped perovskite layer;
- and the second perovskite layer being composed of the third sub-layer and the fourth sub-layer.
8 more elements
Dependencies are inferred from the claim text.