LED with small mesa width
AssigneeSilanna UV Technologies Pte Ltd
InventorsJohnny Cai Tang, Petar Atanackovic
Life of this patent
Estimating the term…
Abstract
A light emitting device includes a first active layer on a substrate, a current spreading length, and a plurality of mesa regions on the first active layer. At least a first portion of the first active layer can comprise a first electrical polarity. Each mesa region can include, at least a second portion of the first active layer, a light emitting region on the second portion of the first active layer with a dimension parallel to the substrate smaller than twice the current spreading length, and a second active layer on the light emitting region. The light emitting region can be configured to emit light with a target wavelength from 200 nm to 300 nm. At least a portion of the second active layer can comprise a second electrical polarity.
Claims30
A light emitting device comprising:
- a first active layer on a substrate, at least a first portion of the first active layer comprising a first electrical polarity;
- a current spreading length;
- and
- a plurality of mesa regions on the first active layer, wherein each mesa region comprises:
- at least a second portion of the first active layer;
- a light emitting region on the second portion of the first active layer, the light emitting region having a thickness and being configured to emit light, the emitted light having a target wavelength from 200 nm to 300 nm, the light emitting region having a dimension parallel to the substrate smaller than twice the current spreading length;
- and
- a second active layer on the light emitting region, at least a portion of the second active layer comprising a second electrical polarity,
- wherein one or more of the first active layer, the light emitting region, or the second active layer comprises ZnO, MgO, or BN.
A light emitting device comprising:
- a first active layer on a substrate, at least a first portion of the first active layer comprising a first electrical polarity;
- a current spreading length;
- and
- a plurality of mesa regions on the first active layer, wherein each mesa region comprises:
- at least a second portion of the first active layer;
- a light emitting region on the second portion of the first active layer, the light emitting region having a thickness and being configured to emit light, the emitted light having a target wavelength from 200 nm to 300 nm, the light emitting region having a dimension parallel to the substrate smaller than twice the current spreading length;
- and
- a second active layer on the light emitting region, at least a portion of the second active layer comprising a second electrical polarity,
- wherein a distance separating mesas within the plurality of mesa regions is from 1 micron to 10 microns.
A light emitting device comprising:
- a first active layer on a substrate, at least a first portion of the first active layer comprising a first electrical polarity;
- a current spreading length;
- and
- a plurality of mesa regions on the first active layer, wherein each mesa region comprises:
- at least a second portion of the first active layer;
- a light emitting region on the second portion of the first active layer, the light emitting region having a thickness and being configured to emit light, the emitted light having a target wavelength from 200 nm to 300 nm, the light emitting region having a dimension parallel to the substrate smaller than twice the current spreading length;
- and
- a second active layer on the light emitting region, at least a portion of the second active layer comprising a second electrical polarity,
- wherein the plurality of mesa regions is surrounded by a reflector to improve confinement of transverse modes of the emitted light.
Dependencies are inferred from the claim text.