Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sic
AssigneeSTMicroelectronics S.r.l.
InventorsSimone Rascuná, Gabriele Bellocchi, Paolo Badalá, Isodiana Crupi
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Abstract
A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.
Claims18
A method, comprising:
- manufacturing a detector device for detecting UV radiation by:
- forming, on a front side of a silicon carbide (SiC) substrate that has a first conductivity and a first concentration of dopant species, a drift layer of SiC having the first conductivity and a second concentration of dopant species lower than the first concentration;
- forming, on a back side of the substrate, a cathode terminal of the detector device;
- and
- forming, in the drift layer, an anode terminal of the detector device, the forming the anode terminal includes:
- forming a doped anode region by implanting, in the drift layer, dopant species having a second conductivity opposite to the first conductivity;
- and
- forming a first ohmic-contact region including one or more carbon-rich layers in said doped anode region with a laser.
A method, comprising:
- forming a UV detector device that includes a silicon carbide (SiC) substrate having a first conductivity and a first concentration of dopant species, with a front side and a back side opposite to one another;
- forming a SiC drift layer on the front side of the substrate, the SiC drift layer having the first conductivity and a second concentration of dopant species lower than the first concentration;
- forming an anode terminal in the SiC drift layer, wherein forming the anode terminal includes:
- forming a doped anode region in the drift layer, including dopant species having a second conductivity opposite to the first conductivity;
- and
- forming a first ohmic-contact region including one or more carbon-rich layers in the doped anode region.
A method, comprising:
- forming a UV radiation detector device by:
- forming on a first side of a silicon carbide (SiC) substrate a drift layer having a first conductivity and a first concentration of dopant species, the SiC substrate has the first conductivity a second concentration of dopant species greater than the first concentration;
- forming, in the drift layer, an anode terminal of the detector device, the forming the anode terminal includes:
- forming a doped anode region, in the drift layer, dopant species having a second conductivity opposite to the first conductivity;
- and
- forming a first ohmic-contact region including a carbon-rich layer in the doped anode region with a laser.
Dependencies are inferred from the claim text.