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US 12,125,883 B2Granted
Biaxially oriented SiC composite substrate and semiconductor device composite substrate
AssigneeNGK Insulators, Ltd.
InventorsMorimichi Watanabe, Kiyoshi Matsushima, Jun Yoshikawa
Life of this patent
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Abstract
A biaxially oriented SiC composite substrate includes a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation, and a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element. The defect density of a surface of the second biaxially oriented SiC layer is smaller than the defect density of the first biaxially oriented SiC layer.
Claims11
A biaxially oriented SiC composite substrate comprising:
- a first biaxially oriented SiC layer that contains a threading screw dislocation and a basal plane dislocation;
- and
- a second biaxially oriented SiC layer that is formed continuously from the first biaxially oriented SiC layer and that contains 1×1016 atoms/cm3 or more and 1×1019 atoms/cm3 or less of a rare earth element,
- wherein:
- a defect density of a surface of the second biaxially oriented SiC layer is smaller than a defect density of the first biaxially oriented SiC layer.
2 more elements
Dependencies are inferred from the claim text.