Heat treatment method and heat treatment apparatus
AssigneeSCREEN Holdings Co., Ltd.
InventorsOma Nakajima, Mao Omori
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AssigneeSCREEN Holdings Co., Ltd.
InventorsOma Nakajima, Mao Omori
Estimating the term…
The semiconductor wafer is preheated by halogen lamps and then heated by a flash of light irradiation from flash lamps. A length of a light emission waveform of a flash of light applied from the flash lamps can be adjusted as appropriate. A data collection cycle (sampling interval) of a radiation thermometer that measures a surface temperature of the semiconductor wafer is made variable, and the longer the light emission waveform of the flash of light, the longer the data collection cycle. Even when a rising and falling time of the surface temperature of the semiconductor wafer changes due to the length of the light emission waveform of a flash of light, a temperature change can be included in a temperature profile with a constant number of data points until the surface temperature rises, goes through a maximum reaching temperature, and falls.
A heat treatment method for irradiating a substrate with a flash of light to heat the substrate, the heat treatment method comprising:
A heat treatment method for irradiating a substrate with a flash of light to heat the substrate, the heat treatment method comprising:
A heat treatment method for irradiating a substrate with a flash of light to heat the substrate, the heat treatment method comprising:
A heat treatment apparatus configured to irradiate a substrate with a flash of light to heat the substrate, the heat treatment apparatus comprising:
A heat treatment apparatus configured to irradiate a substrate with a flash of light to heat the substrate, the heat treatment apparatus comprising:
A heat treatment apparatus configured to irradiate a substrate with a flash of light to heat the substrate, the heat treatment apparatus comprising:
Dependencies are inferred from the claim text.