Back to results
US 12,125,508 B2Granted
Topological insulator based spin torque oscillator reader
AssigneeWestern Digital Technologies, Inc.
InventorsXiaoyong Liu, Zhanjie Li, Quang Le, Brian R. York, Cherngye Hwang, Kuok San Ho, Hisashi Takano
Life of this patent
Estimating the term…
Abstract
The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.
Claims13
A sensor, comprising:
- a seed layer;
- a magnetic tunnel junction (MTJ) structure disposed over the seed layer;
- a first buffer layer disposed over the MTJ structure;
- a bismuth antimony (BiSb) layer disposed over the first buffer layer;
- a second buffer layer disposed over the BiSb layer;
- a capping layer disposed over the second buffer layer, wherein the seed layer, the MTJ structure, the first buffer layer, the BiSb layer, the second buffer layer, and the capping layer are disposed at a media facing surface (MFS);
- and
- an antiferromagnetic (AFM) layer, wherein the AFM layer is adjacent to the MTJ structure.
5 more elements
A sensor, comprising:
- a seed layer;
- a magnetic tunnel junction (MTJ) structure disposed over the seed layer, the MTJ structure comprising:
- a pinning layer disposed on the seed layer;
- an insulation layer disposed over the seed layer;
- and
- a free layer disposed on the insulation layer;
- a first buffer layer disposed over the MTJ structure;
- a bismuth antimony (BiSb) layer disposed over the first buffer layer;
- a second buffer layer disposed over the BiSb layer;
- a capping layer disposed over the second buffer layer, wherein the seed layer, the MTJ structure, the first buffer layer, the BiSb layer, the second buffer layer, and the capping layer are disposed at a media facing surface (MFS);
- and
- an antiferromagnetic (AFM) layer, wherein the AFM layer is adjacent to the MTJ structure and in contact with the seed layer.
9 more elements
Dependencies are inferred from the claim text.