Emitter structures for ultra-small vertical cavity surface emitting lasers (VCSELs) and arrays incorporating the same
AssigneeSense Photonics, Inc.
InventorsScott Burroughs, Brent Fisher, James Carter
Life of this patent
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Abstract
A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
Claims20
A Light Detection and Ranging (LIDAR) array, comprising:
- a plurality of laser diodes arranged on a substrate, wherein each of the laser diodes comprises:
- a semiconductor structure comprising a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer, the upper Bragg reflector layer comprising a lasing aperture having an optical axis oriented perpendicular to a surface of the active region,
- wherein the active region comprises a first material that is configured to emit light in a wavelength range of about 1300 nanometers to about 2000 nanometers, wherein at least one of the lower or the upper Bragg reflector layers comprises a second material, and wherein respective lattice structures of the first and second materials are independent of one another.
A method of fabricating a laser array, the method comprising:
- providing a plurality of laser diodes on a substrate, wherein each of the laser diodes comprises a semiconductor structure comprising a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer, the upper Bragg reflector layer comprising a lasing aperture having an optical axis oriented perpendicular to a surface of the active region,
- wherein the active region comprises a first material that is configured to emit light in a wavelength range of about 1300 nanometers to about 2000 nanometers, wherein at least one of the lower or the upper Bragg reflector layers comprises a second material, and wherein respective lattice structures of the first and second materials are independent of one another.
Dependencies are inferred from the claim text.