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AssigneeUnity Semiconductor Corporation
InventorsAlain Courteville, Michael Schöbitz, Wolfgang Alexander Iff
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A method for characterizing a structure etched in a first substrate surface, the structure extending along a longitudinal direction, z, into the substrate, the method implemented by a system including a light source emitting an illumination beam with a wavelength transmitted through the substrate, and an imaging device positioned to face a second substrate surface opposite the first surface, the method including illuminating at least one structure with the illumination beam, subsequently positioning an object plane of the imaging device at at least two different longitudinal positions; acquiring at least one image of the structure at each of the longitudinal positions, the images being acquired through the substrate; measuring data relating to a lateral dimension of the structure from each acquired image at each of the longitudinal positions; and determining longitudinal data relating to a longitudinal shape of the structure from the lateral data of at least two longitudinal positions.
A method for characterizing a structure etched in a first surface of a substrate, such as a wafer, said structure extending along a longitudinal direction, z, into the substrate, the method being implemented by a characterizing system comprising a light source configured to emit an illumination beam with a wavelength adapted to be transmitted through the substrate, and an imaging device positioned to face a second surface of the substrate opposite to the first surface, the method comprising the following steps:
A system for characterizing a structure etched in a first surface of a substrate, such as a wafer, said structure extending along a longitudinal direction, z, into the substrate, the system comprising:
Dependencies are inferred from the claim text.