Sensor devices with gas-permeable cover and associated production methods

A method for producing sensor devices, the method comprising:

• generating a semiconductor wafer having a plurality of sensor chips, wherein a plurality of micro-electromechanical systems (MEMS) structures are arranged at a main surface of the semiconductor wafer, wherein each sensor chip comprises a MEMS structure integrated in the semiconductor wafer at the main surface of the semiconductor wafer, and wherein each MEMS structure resides within a semiconductor material of the semiconductor wafer that is allocated to a respective sensor chip of the plurality of sensor chips;
• forming a plurality of trenches that extend from the main surface of the semiconductor wafer into the semiconductor wafer, wherein, one or more trenches of the plurality of trenches laterally surround a respective MEMS structure within the semiconductor material;
• forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the plurality of MEMS structures and forms a cavity above the corresponding MEMS structure such that a plurality of cavities are formed above the plurality of MEMS structures, wherein each cavity is formed between a corresponding MEMS structure and a corresponding gas-permeable cover;
• and
• singulating the semiconductor wafer into a plurality of sensor devices, wherein each sensor device includes a corresponding sensor chip.