Microelectronics H-frame device

A microelectronics H-frame device, comprising:

• a substrate stack comprising at least a top substrate and a bottom substrate, wherein bonding of the top substrate to the bottom substrate creates a vertical electrical connection between the top substrate and the bottom substrate, wherein a top surface of the top substrate comprises top substrate top metallization, wherein a bottom surface of the bottom substrate comprises bottom substrate bottom metallization, wherein the top surface of the top substrate and the bottom surface of the bottom substrate are fabricated together on a front of a wafer;
• mid-substrate metallization located between the top substrate and the bottom substrate;
• a micro-machined top cover bonded to a top side of the substrate stack;
• and
• a micro-machined bottom cover bonded to a bottom side of the substrate stack, wherein the bottom surface of the top substrate comprises top substrate bottom metallization, and wherein the top substrate further comprises metallized top substrate through-substrate vias connecting the top substrate top metallization and the top substrate bottom metallization, the metallized top substrate through-substrate vias forming a first vertical electrical connection between the top substrate top metallization and the top substrate bottom metallization.