# US 12,120,943 B2 · Display device and method of manufacturing the same

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- Number: US 12,120,943 B2
- Document ID: US12120943B2
- Status: Granted
- Kind: B2
- Application number: 18/363,944
- Filed: 2023-08-02
- Published: 2023-11-23
- Granted: 2024-10-15
- Earliest claimed: 2020-02-26
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., LTD.
- Inventors: Wang Woo Lee; Sung Ho Kim; Hyeon Sik Kim; Joon Hyoung Park; Seok Je Seong; Jin Sung An; Jin Seok Oh; Min Woo Woo; Ji Seon Lee; Pil Suk Lee; Yun Sik Joo
- Web page: https://patentgrep.com/patent/US12120943B2

## CPC

- H10K 71/233: {by photolithographic etching}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/8731: {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers}
- H10K 71/80: using temporary substrates
- H10K 77/111: {Flexible substrates}
- H10D 30/0312: {characterised by the gate electrodes}
- H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate}
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/0214: {using temporary substrates}
- H10D 86/0221: {comprising manufacture, treatment or patterning of TFT semiconductor bodies}
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10K 59/12: Active-matrix OLED [AMOLED] displays
- H10K 59/1201: {Manufacture or treatment}
- H10K 2102/311: {Flexible OLED}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.

## Claims

### Claim 1

A method for manufacturing a display device, the method comprising:
forming a base substrate on a carrier substrate, the base substrate including:
an organic film including a polymeric material; and
an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film;
forming a first active pattern including a semiconductive material in a display area of the base substrate;
forming a first interlayer insulation layer on the first active pattern;
forming a second active pattern on the first interlayer insulation layer in the display area of the base substrate, the second active pattern including a semiconductive material different from the first active pattern;
forming a second interlayer insulation layer on the second active pattern;
forming a photoresist film on the second interlayer insulation layer;
exposing the photoresist film to light through a first mask including:
a first transmitting portion overlapping the first active pattern or the second active pattern; and
a second transmitting portion disposed between an edge of the carrier substrate and the edge of the organic film;
exposing an edge portion of the photoresist film to light, the edge portion of the photoresist film overlapping the edge of the carrier substrate;
developing the photoresist film to form a first photoresist pattern that includes a first opening and does not overlap the edge of the carrier substrate, the first opening overlapping the first active pattern or the second active pattern; and
forming a contact hole exposing the first active pattern or the second active pattern by using the first photoresist pattern as a mask.

### Claim 2 (depends on 1)

The method of claim 1, wherein
the first mask further includes a third transmitting portion overlapping a bending area of the base substrate,
the first photoresist pattern further includes a second opening overlapping the bending area, and
the second interlayer insulation layer is etched in the bending area upon formation of the contact hole.

### Claim 3 (depends on 2)

The method of claim 2, wherein the contact hole exposes the first active pattern, and the method further comprises:
forming a second photoresist pattern on the second interlayer insulation layer, the second photoresist pattern including a first opening overlapping the second active pattern, and a second opening overlapping the bending area;
forming a contact hole exposing the second active pattern by using the second photoresist pattern as a mask;
forming a first source metal pattern including:
a first source pattern electrically contacting the first active pattern;
a first drain pattern electrically contacting the first active pattern and spaced apart from the first source pattern;
a second source pattern electrically contacting the second active pattern; and
a second drain pattern electrically contacting the second active pattern and spaced apart from the second source pattern;
forming a third photoresist pattern overlapping the first source metal pattern and including an opening overlapping the bending area; and
etching the inorganic barrier film in the bending area by using the third photoresist pattern as a mask to expose the organic film.

### Claim 4 (depends on 3)

The method of claim 3, further comprising:
forming an organic filling portion on an exposed portion of the organic film.

### Claim 5 (depends on 4)

The method of claim 4, further comprising:
forming a second source metal pattern including a transfer wiring disposed on the organic filling portion and a connection electrode electrically contacting the first drain pattern.

### Claim 6 (depends on 3)

The method of claim 3, wherein the inorganic barrier film includes a portion that extends outwardly from the edge of the organic film and remains after the inorganic barrier film is etched in the bending area, the portion having a width equal to or more than about 3 mm.

### Claim 7 (depends on 1)

The method of claim 1, wherein the second transmitting portion overlaps a portion of the inorganic barrier film protruding from the edge of the organic film.

### Claim 8 (depends on 7)

The method of claim 7, wherein the second transmitting portion extends along the edge of the carrier substrate.

### Claim 9 (depends on 1)

The method of claim 1, wherein the edge portion of the photoresist film is exposed to light without using a mask.

### Claim 10 (depends on 9)

The method of claim 9, wherein the light-exposed edge portion of the photoresist film overlaps an area, which is light-exposed through the second transmitting portion of the first mask.

### Claim 11 (depends on 10)

The method of claim 10, wherein the light-exposed edge portion of the photoresist film has a frame shape surrounding the base substrate.

### Claim 12 (depends on 1)

The method of claim 1, wherein the first active pattern includes polysilicon, and the second active pattern includes a metal oxide.

### Claim 13 (depends on 1)

The method of claim 1, wherein the base substrate includes organic films.

### Claim 14 (depends on 1)

The method of claim 1, further comprising:
separating the carrier substrate from the base substrate.