# US 12,120,941 B1 · Method for preparing high-resolution quantum dot (QD) pixelated light-emitting film

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,120,941 B1
- Document ID: US12120941B1
- Status: Granted
- Kind: B1
- Application number: 18/626,038
- Filed: 2024-04-03
- Granted: 2024-10-15
- Earliest claimed: 2023-05-17
- Assignees: Soochow University
- Applicants: Soochow University
- Inventors: Yu Chen; Chengzhao Luo; Zhenwei Ren
- Web page: https://patentgrep.com/patent/US12120941B1

## CPC

- H10K 71/233: {by photolithographic etching}
- H10K 71/12: using liquid deposition, e.g. spin coating
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/15: Hole transporting layers
- H10K 50/16: Electron transporting layers
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The invention provides a high-resolution QD pixelated light-emitting film and method for preparing same. The method includes: spin-coating a photoresist on a base; drying and exposing the base; coating a developer at a preset position on the base to obtain a photoresist pattern layer; depositing an insulating layer on the photoresist pattern layer by using silane; removing a photoresist pattern in the insulating layer; spin-coating a polyethylenimine solution on the insulating layer to obtain a PEI layer; and dropping a QD solution on the PEI layer to deposit a QD layer. The hydrophobicity of silane is used to implement dewetting to implement QD pixilation. A PEI solution is spontaneously deposited at the position of a photoresist pattern. Further, the QD solution is adsorbed into the PEI solution to obtain a high-resolution QD pixelated light-emitting film, thereby improving the film forming quality, and passivating surface defects of a QD layer.

## Claims

### Claim 1

A method for preparing a high-resolution quantum dot (QD) pixelated light-emitting film, comprising:
spin-coating a photoresist on a surface of a base;
drying the base spin-coated with the photoresist;
exposing the dried base by using a photolithography device;
coating a developer at a preset position on the surface of the base for development to obtain a photoresist pattern layer;
depositing a perfluorooctyltrichlorosilane (PFTS) insulating layer on a surface of the photoresist pattern layer by means of self-assembly of silane;
removing a photoresist pattern in the PFTS insulating layer to obtain a PFTS insulating layer having a mesh pattern;
spin-coating a polyethylenimine (PEI) solution on a surface of the PFTS insulating layer having the mesh pattern to obtain a PEI layer; and
dropping the QD solution on a surface of the PEI layer to deposit a QD layer, to obtain the high-resolution QD pixelated light-emitting film.

### Claim 2 (depends on 1)

The method for preparing the high-resolution QD pixelated light-emitting film according to claim 1, wherein before spin-coating the photoresist on the surface of the base, the method further comprises:
washing the base using acetone and isopropanol sequentially; and
drying the washed base by placing it on a heating platform.

### Claim 3 (depends on 1)

The method for preparing the high-resolution QD pixelated light-emitting film according to claim 1, wherein after dropping the QD solution on the surface of the PEI layer to deposit the QD layer to obtain the high-resolution QD pixelated light-emitting film, the method further comprises: detecting element distribution on a surface of the high-resolution QD pixelated light-emitting film by using an energy dispersion spectrometer (EDS) in a scanning electron microscope (SEM).

### Claim 4 (depends on 1)

The method for preparing the high-resolution QD pixelated light-emitting film according to claim 1, wherein the base is transparent conductive film glass or a silicon wafer.

### Claim 5 (depends on 1)

The method for preparing the high-resolution QD pixelated light-emitting film according to claim 1, wherein a shape of the photoresist pattern comprises, but not limited to, a circle, a square, and a hexagon.

### Claim 6 (depends on 1)

The method for preparing the high-resolution QD pixelated light-emitting film according to claim 1, wherein the PEI solution is a PEI aqueous solution.

### Claim 7 (depends on 1)

The high-resolution quantum dot (QD) pixelated light-emitting film, wherein the high-resolution QD pixelated light-emitting film is prepared by using the method according to claim 1.

### Claim 8 (depends on 1)

A method for preparing a transparent quantum dot (QD) light-emitting diode, comprising:
providing the perfluorooctyltrichlorosilane (PFTS) insulating layer having the mesh pattern prepared by using the method according to claim 1;
spin-coating a colloid-doped oxide semiconductor solution on a surface of the PFTS insulating layer having the mesh pattern to obtain an electron transport layer;
spin-coating a polyethylenimine (PEI) solution on a surface of the electron transport layer to obtain a PEI layer;
dropping a QD solution on a surface of the PEI layer to deposit a QD layer;
spin-coating a chlorobenzene solution on a surface of the QD layer to obtain a hole transport layer;
placing a Kapton tape having a preset pattern as a photomask at a first preset position on a surface of the hole transport layer, and coating a silver nanowire on a surface of the photomask to obtain a negative electrode; and
placing a Kapton tape having a preset pattern as a photomask at a second preset position on the surface of the hole transport layer, and coating indium tin oxide on a surface of the photomask to obtain a positive electrode.

### Claim 9 (depends on 8)

The method for preparing the transparent QD light-emitting diode according to claim 8, wherein the PEI solution is a PEI ethanol solution.

### Claim 10 (depends on 8)

The transparent quantum dot (QD) light-emitting diode, wherein the transparent QD light-emitting diode is prepared by using the method according to claim 8.