# US 12,120,919 B2 · Display apparatus and method of manufacturing the same

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- Number: US 12,120,919 B2
- Document ID: US12120919B2
- Status: Granted
- Kind: B2
- Application number: 17/679,691
- Filed: 2022-02-24
- Published: 2022-12-15
- Granted: 2024-10-15
- Earliest claimed: 2021-06-11
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Jaehwan Chu; Meejae Kang; Keunwoo Kim; Doona Kim; Sangsub Kim; Hanbit Kim; Dokyeong Lee; Yongsu Lee
- Web page: https://patentgrep.com/patent/US12120919B2

## CPC

- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/1216: {the pixel elements being capacitors}
- H10K 59/1201: {Manufacture or treatment}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A method of manufacturing a display apparatus includes forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer; forming a driving semiconductor layer and a compensation semiconductor layer using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer; exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern; forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern; exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.

## Claims

### Claim 1

A display apparatus comprising:
a driving thin-film transistor including:
a driving channel region; and
a driving gate electrode that at least partially overlaps the driving channel region;
a compensation thin-film transistor including:
a compensation channel region; and
a compensation gate electrode that at least partially overlaps the compensation channel region, the compensation thin-film transistor being diode-connected to the driving thin-film transistor in response to a voltage applied to the compensation gate electrode;
a first insulating layer disposed between the driving channel region and the driving gate electrode of the driving thin-film transistor; and
a second insulating layer disposed between the first insulating layer and the driving gate electrode and disposed between the compensation channel region and the compensation gate electrode of the compensation thin-film transistor,
wherein a width of the compensation channel region of the compensation thin-film transistor is less than a width of the driving channel region of the driving thin-film transistor.

### Claim 2 (depends on 1)

The display apparatus of claim 1, further comprising:
a first initialization thin-film transistor including:
a first initialization channel region; and
a first initialization gate electrode that at least partially overlaps the first initialization channel region,
wherein the first initialization thin-film transistor initializes a voltage of the driving gate electrode of the driving thin-film transistor in response to a voltage applied to the first initialization gate electrode.

### Claim 3 (depends on 1)

The display apparatus of claim 1, wherein the first insulating layer does not overlap the compensation channel region of the compensation thin-film transistor.

### Claim 4 (depends on 2)

The display apparatus of claim 2, wherein the first insulating layer does not overlap the first initialization channel region of the first initialization thin-film transistor.

### Claim 5 (depends on 1)

The display apparatus of claim 1, further comprising:
a third insulating layer overlapping the driving gate electrode of the driving thin-film transistor; and
a storage capacitor including a first electrode and a second electrode that overlap each other,
wherein the third insulating layer is disposed between the first electrode and the second electrode.

### Claim 6 (depends on 5)

The display apparatus of claim 5, wherein the driving gate electrode of the driving thin-film transistor and the first electrode of the storage capacitor are integral with each other.

### Claim 7 (depends on 1)

The display apparatus of claim 1, wherein the first insulating layer has a thickness in a range of about 1000 Å (angstroms) to about 1500 Å.

### Claim 8 (depends on 7)

The display apparatus of claim 7, wherein the second insulating layer has a thickness in a range of about 500 Å to about 1000 Å.

### Claim 9 (depends on 1)

The display apparatus of claim 1, wherein
the first insulating layer includes silicon oxide, and
the second insulating layer includes silicon oxide or silicon nitride.

### Claim 10

A method of manufacturing a display apparatus, the method comprising:
forming a first photosensitive pattern and a second photosensitive pattern of different thicknesses on an active layer;
forming a driving semiconductor layer and a compensation semiconductor layer by using the first photosensitive pattern and the second photosensitive pattern as masks to etch the active layer;
exposing an upper surface of the driving semiconductor layer by etching the first photosensitive pattern and forming a third photosensitive pattern by etching at least a portion of the second photosensitive pattern;
forming a first insulating layer on the driving semiconductor layer and the third photosensitive pattern;
exposing an upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern; and
forming a second insulating layer on the first insulating layer and the compensation semiconductor layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein a thickness of the second photosensitive pattern is greater than a thickness of the first photosensitive pattern.

### Claim 12 (depends on 10)

The method of claim 10, wherein the first insulating layer has a thickness in a range of about 1000 Å to about 1500 Å.

### Claim 13 (depends on 12)

The method of claim 12, wherein the second insulating layer has a thickness in a range of about 500 Å to about 1000 Å.

### Claim 14 (depends on 13)

The method of claim 13, wherein
the first insulating layer includes silicon oxide, and
the second insulating layer includes silicon oxide or silicon nitride.

### Claim 15 (depends on 10)

The method of claim 10, further comprising:
performing a first cleaning process on the upper surface of the driving semiconductor layer after the exposing of the upper surface of the driving semiconductor layer by etching the first photosensitive pattern.

### Claim 16 (depends on 15)

The method of claim 15, further comprising:
performing a second cleaning process on the upper surface of the compensation semiconductor layer after the exposing of the upper surface of the compensation semiconductor layer by stripping the third photosensitive pattern.

### Claim 17 (depends on 16)

The method of claim 16, wherein a concentration of HF (hydrofluoric acid) used in the second cleaning process is lower than a concentration of HF used in the first cleaning process.

### Claim 18 (depends on 10)

The method of claim 10, further comprising:
forming a driving gate electrode and a compensation gate electrode on the second insulating layer after the forming of the second insulating layer on the first insulating layer and the compensation semiconductor layer.

### Claim 19 (depends on 18)

The method of claim 18, wherein
the driving semiconductor layer includes a driving channel region overlapping the driving gate electrode,
the compensation semiconductor layer includes a compensation channel region overlapping the compensation gate electrode, and
a width of the compensation channel region is less than a width of the driving channel region.

### Claim 20 (depends on 10)

The method of claim 10, wherein the compensation semiconductor layer does not overlap the first insulating layer.