# US 12,120,909 B2 · Display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,120,909 B2 - Document ID: US12120909B2 - Status: Granted - Kind: B2 - Application number: 17/440,757 - Filed: 2019-03-29 - Published: 2022-06-09 - Granted: 2024-10-15 - Earliest claimed: 2019-03-29 - Assignees: Sharp Kabushiki Kaisha - Applicants: Sharp Kabushiki Kaisha - Inventors: Manabu Niboshi - Web page: https://patentgrep.com/patent/US12120909B2 ## CPC - H10K 59/8792: {comprising light absorbing layers, e.g. black layers} - G09F 9/30: in which the desired character or characters are formed by combining individual elements (panels comprising a number of electrodes in a single cell controlling light arriving from an independent light source, e.g. electro-optical or magneto-optical cell, G02F1/00) - H05B 33/26: characterised by the composition or arrangement of the conductive material used as an electrode - H05B 33/28: of translucent electrodes - H10K 59/35: comprising red-green-blue [RGB] subpixels - H10K 59/80518: {Reflective anodes, e.g. ITO combined with thick metallic layers} - H10K 59/879: {comprising refractive means, e.g. lenses} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K 59/80517: {Multilayers, e.g. transparent multilayers} - H10K 59/80524: {Transparent cathodes, e.g. comprising thin metal layers} - H10K 2102/351: {Thickness} - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G09F: DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS - H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL ## Abstract A display device includes a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed in this order from a thin film transistor layer side, and the first electrode includes a first transparent electrode, a reflective metal layer, and a semi-transparent metal layer in this order from the side opposite to the light-emitting layer. ## Claims ### Claim 1 A display device comprising: a thin film transistor layer including thin-film transistors; a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed on the thin film transistor layer in this order from a side of the thin film transistor layer; and a sealing layer covering the light-emitting element layer, wherein the first electrode includes a first transparent electrode, a reflective metal layer, and a molybdenum silicide layer disposed, in this order, on the thin film transistor layer, the first electrode further includes a second transparent electrode disposed on the molybdenum silicide layer, and a layer thickness of the molybdenum silicide layer is in a range of 1 to 5 nm. ### Claim 2 A display device comprising: a thin film transistor layer including thin-film transistors; a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed on the thin film transistor layer in this order from a side of the thin film transistor layer; and a sealing layer covering the light-emitting element layer, wherein the first electrode includes a first transparent electrode, a reflective metal layer, and a layer formed by at least one of tungsten silicide, tungsten oxide, and nickel oxide, and disposed, in this order, on the thin film transistor layer, and the first electrode further includes a second transparent electrode disposed on the layer, or between the reflective metal layer and the layer. ### Claim 3 (depends on 1) The display device according to claim 1, wherein a refractive index of the molybdenum silicide layer is larger than a refractive index of the second transparent electrode. ### Claim 4 (depends on 1) The display device according to claim 1, wherein an absorption coefficient of the molybdenum silicide layer is larger than an absorption coefficient of the second transparent electrode. ### Claim 5 (depends on 1) The display device according to claim 1, wherein the layer thickness of the molybdenum silicide layer is 2 nm. ### Claim 6 (depends on 2) The display device according to claim 2, wherein a layer thickness of the layer is 2 nm. ### Claim 7 (depends on 1) The display device according to claim 1, wherein an absorption coefficient of the molybdenum silicide layer is in a range of 0.1 to 10. ### Claim 8 (depends on 1) The display device according to claim 1, wherein a refractive index of the molybdenum silicide layer is in a range of 2 to 7. ### Claim 9 (depends on 2) The display device according to claim 2, wherein a refractive index of the layer is larger than a refractive index of the second transparent electrode. ### Claim 10 (depends on 2) The display device according to claim 2, wherein an absorption coefficient of the layer is larger than an absorption coefficient of the second transparent electrode. ### Claim 11 (depends on 2) The display device according to claim 2, wherein an absorption coefficient of the layer is in a range of 0.1 to 10. ### Claim 12 (depends on 2) The display device according to claim 2, wherein a refractive index of the layer is in a range of 2 to 7. ### Claim 13 A display device comprising: a thin film transistor layer including thin-film transistors; a light-emitting element layer including a plurality of light-emitting elements in each of which a first electrode, a function layer including a light-emitting layer, and a second electrode are disposed on the thin film transistor layer in this order from a side of the thin film transistor layer; and a sealing layer covering the light-emitting element layer, wherein the first electrode includes a first transparent electrode, a reflective metal layer, and a molybdenum silicide layer disposed, in this order, on the thin film transistor layer, the first electrode further includes a second transparent electrode disposed between the reflective metal layer and the molybdenum silicide layer, and a layer thickness of the molybdenum silicide layer is in a range of 1 to 5 nm. ### Claim 14 (depends on 13) The display device according to claim 13, wherein a refractive index of the molybdenum silicide layer is larger than a refractive index of the second transparent electrode. ### Claim 15 (depends on 13) The display device according to claim 13, wherein an absorption coefficient of the molybdenum silicide layer is larger than an absorption coefficient of the second transparent electrode. ### Claim 16 (depends on 13) The display device according to claim 13, wherein the layer thickness of the molybdenum silicide layer is 2 nm. ### Claim 17 (depends on 13) The display device according to claim 13, wherein an absorption coefficient of the molybdenum silicide layer is in a range of 0.1 to 10. ### Claim 18 (depends on 13) The display device according to claim 13, wherein a refractive index of the molybdenum silicide layer is in a range of 2 to 7. ### Claim 19 (depends on 2) The display device according to claim 2, wherein the second transparent electrode is disposed on the layer. ### Claim 20 (depends on 19) The display device according to claim 19, wherein a layer thickness of the layer is 2 nm.