# US 12,120,899 B2 · Light emitting device comprising perovskite charge transport layer and manufacturing method thereof

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- Number: US 12,120,899 B2
- Document ID: US12120899B2
- Status: Granted
- Kind: B2
- Application number: 17/252,268
- Filed: 2019-06-14
- Published: 2021-09-30
- Granted: 2024-10-15
- Earliest claimed: 2018-06-14
- Assignees: Seoul National University R&Db Foundation
- Applicants: Seoul National University R&Db Foundation
- Inventors: Tae-Woo Lee; Young-Hoon Kim; Himchan Cho
- Web page: https://patentgrep.com/patent/US12120899B2

## CPC

- H10K 50/15: Hole transporting layers
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 50/16: Electron transporting layers
- H10K 50/171: {Electron injection layers}
- H10K 85/30: Coordination compounds
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 71/164: {using vacuum deposition}
- H10K 2101/30: Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
- H10K 2101/40: Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
- H10K 2102/321: {Inverted OLED, i.e. having cathode between substrate and anode}
- H10K 2102/351: {Thickness}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Disclosed are a light emitting device including a perovskite charge transport layer and a method of manufacturing the same. Perovskite thin film of the light emitting device is prepared by co-depositing or sequentially depositing perovskite precursors. Perovskite is directly deposited on the substrate, the thickness of the perovskite thin film is easily controlled, and the energy level is easily adjusted. So, a charge transport layer functioning as a hole injection layer or an electron injection layer in the light emitting device may be manufactured to have suitable energy level.

## Claims

### Claim 1

A light emitting device comprising:
an anode and a cathode;
a light emitting layer disposed between the anode and the cathode;
a first charge transport layer disposed between the anode and the light emitting layer, and functioning as a hole injection layer or a hole transport layer; and
a second charge transport layer disposed between the light emitting layer and the cathode, and functioning as an electron injection layer or an electron transport layer,
wherein the first charge transport layer or the second charge transport layer adjacent to the light emitting layer is a perovskite thin film,
wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer, and
wherein a perovskite of the perovskite thin film has structure of ABX3, A2BX4, ABX4 or An−1PbnI3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.

### Claim 2 (depends on 1)

The light emitting device of claim 1, wherein the perovskite thin film of the first charge transport layer and the perovskite thin film of the second charge transport layer are the same or different from each other.

### Claim 3 (depends on 1)

The light emitting device of claim 1, wherein A is CH(NH2)2, CxH2x+1(CNH3), (CH3NH3)n, ((CxH2x+1)nNH3)n(CH3NH3)n, R(NH2)2(R=alkyl), (C2H2n+1NH3)n, CF3NH3, (CF3NH3)n, ((CxF2x+1)nNH3)n(CF3NH3)n, ((CxF2x+1)NH3)n, (CnF2n+1NH3)n (n and x are integers from 1 to 100), Na, K, Rb, Cs, Fr, a combination or derivative thereof,
and
the X is Cl, Br, I, or a combination thereof.

### Claim 4 (depends on 1)

The light emitting device of claim 1, wherein a crystal size in the perovskite thin film is 1 nm to 5 μm.

### Claim 5 (depends on 1)

The light emitting device of claim 1, wherein a thickness of the perovskite thin film is 10 nm to 5 μm.

### Claim 6 (depends on 1)

The light emitting device of claim 1, wherein the perovskite thin film is formed by direct crystallization using co-depositing or sequentially depositing AX compound and BX2 compound, which are perovskite precursors, from different crucibles respectively.

### Claim 7 (depends on 1)

The light emitting device of claim 1, wherein the perovskite thin film is used as the first charge transport layer, the energy level of valence band maximum (VBM) of the perovskite thin film is lower than the energy level of highest occupied molecular orbital (HOMO) of the light emitting layer.

### Claim 8 (depends on 1)

A method of manufacturing light emitting device of claim 1 comprising:
forming the anode on substrate;
forming the first charge transport layer as the hole injection layer or the hole transport layer on the anode;
forming the light emitting layer on the first charge transport layer;
forming the second charge transport layer as the electron injection layer or the electron transport layer on the light emitting layer; and
forming the cathode on the second charge transport layer,
wherein the forming the first charge transport layer or the forming the second charge transport layer is a step of forming the perovskite thin film by using a deposition method,
wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer, and
wherein a perovskite of the perovskite thin film has structure of ABX3, A2BX4, ABX4 or An−1PbnI3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.

### Claim 9 (depends on 8)

The method of manufacturing light emitting device of claim 8, wherein the deposition method is selected from group consisting of vacuum deposition, thermal deposition, flash deposition, laser deposition, chemical vapor deposition, atomic layer deposition, physical vapor deposition, physical-chemical co-evaporation deposition, sequential vapor deposition and solution process-assisted thermal deposition.

### Claim 10 (depends on 1)

A method of manufacturing light emitting device of claim 1 comprising:
forming the cathode on substrate;
forming the second charge transport layer as the electron injection layer or the electron transport layer on the cathode;
forming the light emitting layer on the second charge transport layer;
forming the first charge transport layer as the hole injection layer or the hole transport layer on the light emitting layer; and
forming the anode on the first charge transport layer,
wherein the forming the first charge transport layer or the forming the second charge transport layer is a step of forming the perovskite thin film by using a deposition method,
wherein the perovskite thin film is used as the second charge transport layer, an energy level of conduction band maximum (CBM) of the perovskite thin film is higher than an energy level of lowest unoccupied molecular orbital (LUMO) of the light emitting layer,
wherein a perovskite of the perovskite thin film has structure of ABX3, A2BX4, ABX4 or An−1PbnI3n+1 (n is an integer between 2 and 6), wherein A is an organic ammonium ion, an organic amidinium ions, organic phosphonium ions, alkali metal ions, Pb, Mn, Cu, Ga, Ge, In, Al, Sb, Bi, Po, Sn, Ni, Co, Fe, Cr, Pd, Cd, Ca, Sr, a combination or derivatives thereof, B is a transition metal, alkaline earth metal, organic material, inorganic material, ammonium, their derivatives, or a combination thereof, and X is a halogen ion or a combination of different halogen ions.