# US 12,120,893 B2 · Interconnection structures for perovskite tandem solar cells

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- Number: US 12,120,893 B2
- Document ID: US12120893B2
- Status: Granted
- Kind: B2
- Application number: 17/057,460
- Filed: 2019-05-24
- Published: 2021-05-13
- Granted: 2024-10-15
- Earliest claimed: 2018-05-25
- Assignees: The University of North Carolina at Chapel Hill
- Applicants: The University of North Carolina at Chapel Hill
- Inventors: Jinsong Huang; Zhenhua Yu
- Web page: https://patentgrep.com/patent/US12120893B2

## CPC

- H10K 30/211: {comprising multiple junctions, e.g. double heterojunctions}
- H10K 30/81: Electrodes
- H10K 85/215: {comprising substituents, e.g. PCBM}
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- H10K 30/151: {the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2}
- H10K 30/152: {the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO}
- H10K 30/57: comprising multiple junctions, e.g. tandem PV cells
- H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene}
- H10K 85/1135: {Polyethylene dioxythiophene [PEDOT]; Derivatives thereof}
- H10K 85/211: {Fullerenes, e.g. C60}
- Y02E 10/549: Organic PV cells
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

The present disclosure is directed to double junction tandem perovskite solar cells having a n+/n interconnection layer comprising an ion-doped fullerene layer and a metal oxide layer. In certain embodiments, the metal oxide is SnO2-x (0<x<1). The ion-doped fullerene and metal oxide layers form Ohmic contacts with the wide bandgap and narrow bandgap perovskite sub cells and demonstrate low resistivity and high power conversion efficiencies.

## Claims

### Claim 1

A double junction tandem perovskite solar cell comprising:
a transparent conductive substrate;
a hole transport layer disposed on said conductive substrate;
a wide bandgap perovskite layer disposed on said hole transport layer;
an X layer disposed on said wide bandgap perovskite layer;
an interconnection layer disposed on said X layer, wherein said interconnection layer consists essentially of:
an ion-doped fullerene layer; and,
a SnO2-x(0<x<1) layer having a thickness of about 2 nm to about 200 nm;
wherein x is from about 0.5 to about 0.95, and
a Y layer disposed on said SnO2-x (0<x<1) layer of said interconnection layer;
a narrow bandgap perovskite layer disposed on said Y layer;
an electron transport layer disposed on said narrow bandgap perovskite layer; and
an electrode disposed on said electron transport layer,
wherein
said Y layer does not comprise a conductive transparent oxide material;
said X layer is absent or present, and when absent, said ion-doped fullerene layer is disposed on said wide bandgap perovskite layer; and
said Y layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said metal oxide layer;
or,
a double junction tandem perovskite solar cell comprising:
a transparent conductive substrate;
an electron transport layer disposed on said conductive substrate;
a wide bandgap perovskite layer disposed on said electron transport layer;
a Y layer disposed on said wide bandgap perovskite layer;
an interconnection layer disposed on said Y layer, wherein said interconnection layer consists essentially of:
an ion-doped fullerene layer; and,
a SnO2-x(0<x<1) layer having a thickness of about 2 nm to about 200 nm;
wherein x is from about 0.5 to about 0.95, and
an X layer disposed on said SnO2-x(0<x<1) layer of said interconnection layer;
a narrow bandgap perovskite layer disposed on said X layer;
a hole transport layer disposed on said narrow bandgap perovskite layer; and
an electrode disposed on said hole transport layer,
wherein
said Y layer does not comprise a conductive transparent oxide material;
said X layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said ion-doped fullerene layer; and
said Y layer is absent or present, and when absent, said metal oxide layer is disposed on said wide bandgap perovskite layer.

### Claim 2 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said ion in said ion-doped fullerene layer is selected from the group consisting of iodine (I−) bromine (Br−), chlorine (Cl−), and fluorine(F−); and wherein said ion-doped fullerene layer comprises a fullerene selected from the group consisting of C60, C70, C60 self-assembly molecules, phenyl-C61-butryric acid methyl ester (PCBM), and indene C60 bis adduct (ICBA).

### Claim 3 (depends on 2)

The double junction tandem perovskite solar cell of claim 2, wherein said ion is iodine (I).

### Claim 4 (depends on 2)

The double junction tandem perovskite solar cell of claim 2, wherein said fullerene is C60.

### Claim 5 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said ion-doped fullerene layer has a thickness of about 30 nm.

### Claim 6 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein x in SnO2-x(0<x<1) is about 0.15.

### Claim 7 (depends on 6)

The double junction tandem perovskite solar cell of claim 6, wherein SnO2-x(0<x<1) is an alloy comprising p-type SnO and n-type SnO2, wherein said p-type SnO has a bandgap of about 0.7 eV to about 1.0 eV and said n-type SnO2 has a bandgap of about 3.6 ev.

### Claim 8 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said wide bandgap perovskite layer has a bandgap of about 1.5 eV to about 2 eV and said narrow bandgap perovskite layer has a bandgap of about 1.0 ev to about 1.5 ev.

### Claim 9 (depends on 8)

The double junction tandem perovskite solar cell of claim 8, wherein said wide bandgap perovskite layer has a bandgap of about 1.80 ev.

### Claim 10 (depends on 8)

The double junction tandem perovskite solar cell of claim 8, wherein said narrow bandgap perovskite layer has a bandgap of about 1.20 eV.

### Claim 11 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said narrow and said wide bandgap perovskite layer are different from each other, and comprise an organic-inorganic halide perovskite of the formula ABX3 wherein A comprises a cation selected from the group consisting of methylammonium (MA), tetramethylammonium, formamidinium (FA), cesium, rubidium, potassium, sodium, butylammonium, phenethylammonium, phenylammonium, guanidinium, and a combination thereof; B comprises a divalent metal selected from the group consisting of lead, tin, cadmium, germanium, zinc, nickel, platinum, palladium, mercury, titanium, silicon, and a combination thereof; and X is a halide selected from the group consisting of Cl, Br, F, I, and a combination thereof.

### Claim 12 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said narrow bandgap perovskite layer has a composition of Cs0.05MA0.45F A0.5Pb0.5Sn0.5I3 having a bandgap of about 1.23 eV and said wide bandgap perovskite layer has a composition of Cs0.2FA0.8PbI1.8Br1.2 having a bandgap of about 1.78 eV.

### Claim 13 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said electron transport layer comprises a material selected from the group consisting of C60, C70, C60 self-assembly molecules, phenyl-C61-butryric acid methyl ester (PCBM), indene C60 bis adduct (ICBA), TiO2, SnO2, ZnO, bathocuproine (BCP), and a combination thereof.

### Claim 14 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said hole transport layer comprises a material selected from the group consisting of poly(triaryl amine) (PTAA), poly(3-hexylthiophene) (P3HT), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), NiOX, N4,N40-bis(4-(6-((3-ethyloxetan-3yl)methoxy)hexyl)phenyl)-N4, N40-diphenyl-biphenyl-4,40-diamine (TPD), 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD), CuSCN, and a combination thereof.

### Claim 15 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said conductive substrate is selected from the group consisting of Indium Tin Oxide (ITO), Aluminum Doped Zinc Oxide (AZO), and Fluorine doped Tin Oxide (FTO).

### Claim 16 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said electrode is selected from the group consisting of Ag, Au, Cu, Al, Cr, Bi, graphite, and a combination thereof.

### Claim 17 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said X layer and said Y layer are both absent.

### Claim 18 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said X layer is present and comprises a material selected from the group consisting of phenyl-C61-butryric acid methyl ester (PCBM), indene C60 bis adduct (ICBA), TiO2, SnO2, ZnO, bathocuproine (BCP), and a combination thereof.

### Claim 19 (depends on 18)

The double junction tandem perovskite solar cell of claim 18, wherein said Y layer is absent.

### Claim 20 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein said Y layer is present and comprises a material selected from the group consisting of poly(triaryl amine) (PTAA), poly(3-hexylthiophene) (P3HT), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), NiOx, N4,N40-bis(4-(6-((3-ethyloxetan-3y1)methoxy)hexyl)phenyl)-N4, N40-diphenyl-biphenyl-4,40-diamine (TPD), 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD), CuSCN, and a combination thereof.

### Claim 21 (depends on 20)

The double junction tandem perovskite solar cell of claim 20, wherein said X layer is absent.

### Claim 22 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, comprising:
a transparent conductive substrate;
a hole transport layer disposed on said conductive substrate;
a wide bandgap perovskite layer disposed on said hole transport layer;
an X layer disposed on said wide bandgap perovskite layer;
an interconnection layer disposed on said X layer, wherein said interconnection layer consists essentially of:
an ion-doped fullerene layer; and,
a SnO2-x(0<x<1) layer having a thickness of about 2 nm to about 200 nm;
wherein x is from about 0.5 to about 0.95, and
a Y layer disposed on said SnO2-x(0<x<1) layer of said interconnection layer;
a narrow bandgap perovskite layer disposed on said Y layer;
an electron transport layer disposed on said narrow bandgap perovskite layer; and
an electrode disposed on said electron transport layer,
wherein
said Y layer does not comprise a conductive transparent oxide material;
said X layer is absent or present, and when absent, said ion-doped fullerene layer is disposed on said wide bandgap perovskite layer; and
said Y layer is absent or present, and when absent, said narrow bandgap perovskite layer is disposed on said metal oxide layer.

### Claim 23 (depends on 22)

The double junction tandem perovskite solar cell of claim 22, wherein the metal oxide layer has a thickness of about 5 nm to about 150 nm.

### Claim 24 (depends on 1)

The double junction tandem perovskite solar cell of claim 1, wherein the metal oxide layer has a thickness of about 5 nm to about 150 nm.