# US 12,120,890 B2 · Tunnel magnetoresistive effect element, magnetic memory, and built-in memory > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,120,890 B2 - Document ID: US12120890B2 - Status: Granted - Kind: B2 - Application number: 18/344,150 - Filed: 2023-06-29 - Published: 2023-11-02 - Granted: 2024-10-15 - Earliest claimed: 2020-02-20 - Assignees: TDK Corporation - Applicants: TDK Corporation - Inventors: Zhenyao Tang; Tomoyuki Sasaki - Web page: https://patentgrep.com/patent/US12120890B2 ## CPC - G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)} - H10N 50/80: Constructional details - G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors} - H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices - H10B 61/22: {of the field-effect transistor [FET] type} - H10B 99/00: Subject matter not provided for in other groups of this subclass - H10D 84/80: characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence) - H10N 50/10: Magnetoresistive devices - H10N 50/85: Materials of the active region - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction. ## Claims ### Claim 1 A tunnel magnetoresistive effect element comprising: a lower electrode layer; an upper electrode layer; a stack portion including a magnetic tunnel junction arranged between the lower electrode layer and the upper electrode layer; and a minute particle region arranged outside of the magnetic tunnel junction, including a region extending along a side surface of the stack portion, and including a plurality of minute metal particles dispersed in an insulation material. ### Claim 2 (depends on 1) The tunnel magnetoresistive effect element according to claim 1, wherein a thickness of the minute particle region is greater than or equal to 0.2 nm and less than or equal to 50 nm. ### Claim 3 (depends on 1) The tunnel magnetoresistive effect element according to claim 1, wherein a distance between one minute metal particle and another minute metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm. ### Claim 4 (depends on 1) The tunnel magnetoresistive effect element according to claim 1, wherein a particle diameter of the minute metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm. ### Claim 5 (depends on 1) The tunnel magnetoresistive effect element according to claim 1, wherein the minute metal particle includes at least one chemical element selected from the group consisting of Fe, Co, and Ni. ### Claim 6 (depends on 1) The tunnel magnetoresistive effect element according to claim 1, wherein the magnetic tunnel junction includes a reference layer, a tunnel barrier layer stacked on the reference layer, and a magnetization free layer stacked on the tunnel barrier layer. ### Claim 7 (depends on 6) The tunnel magnetoresistive effect element according to claim 6, wherein an area of the magnetization free layer is smaller than an area of the tunnel barrier layer. ### Claim 8 (depends on 6) The tunnel magnetoresistive effect element according to claim 6, further comprising: a non-magnetic layer disposed under the reference layer of the magnetic tunnel junction; a pinning layer disposed under the non-magnetic layer; and a contact layer disposed under the pinning layer, wherein the reference layer forms antiferromagnetic coupling with the pinning layer via the non-magnetic layer, and an area of the magnetization free layer is smaller than an area of the contact layer. ### Claim 9 (depends on 2) The tunnel magnetoresistive effect element according to claim 2, wherein a distance between one minute metal particle and another minute metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm. ### Claim 10 (depends on 2) The tunnel magnetoresistive effect element according claim 2, wherein a particle diameter of the minute metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm. ### Claim 11 (depends on 3) The tunnel magnetoresistive effect element according claim 3, wherein a particle diameter of the minute metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm. ### Claim 12 (depends on 2) The tunnel magnetoresistive effect element according to claim 2, wherein the minute metal particle includes at least one chemical element selected from the group consisting of Fe, Co, and Ni. ### Claim 13 (depends on 3) The tunnel magnetoresistive effect element according to claim 3, wherein the minute metal particle includes at least one chemical element selected from the group consisting of Fe, Co, and Ni. ### Claim 14 (depends on 2) The tunnel magnetoresistive effect element according to claim 2, wherein the magnetic tunnel junction includes a reference layer, a tunnel barrier layer stacked on the reference layer, and a magnetization free layer stacked on the tunnel barrier layer. ### Claim 15 (depends on 3) The tunnel magnetoresistive effect element according to claim 3, wherein the magnetic tunnel junction includes a reference layer, a tunnel barrier layer stacked on the reference layer, and a magnetization free layer stacked on the tunnel barrier layer. ### Claim 16 (depends on 14) The tunnel magnetoresistive effect element according to claim 14, wherein an area of the magnetization free layer is smaller than an area of the tunnel barrier layer. ### Claim 17 (depends on 14) The tunnel magnetoresistive effect element according to claim 14, further comprising: a non-magnetic layer disposed under the reference layer of the magnetic tunnel junction; a pinning layer disposed under the non-magnetic layer; and a contact layer disposed under the pinning layer, wherein the reference layer forms antiferromagnetic coupling with the pinning layer via the non-magnetic layer, and an area of the magnetization free layer is smaller than an area of the contact layer. ### Claim 18 (depends on 1) A magnetic memory comprising: the tunnel magnetoresistive effect element according to claim 1, as a storage element. ### Claim 19 (depends on 2) A magnetic memory comprising: the tunnel magnetoresistive effect element according to claim 2, as a storage element. ### Claim 20 (depends on 18) A built-in memory comprising: the magnetic memory according to claim 18. ### Claim 21 (depends on 1) The tunnel magnetoresistive effect element according to claim 1, wherein: the minute particle region is electrically parallel to the magnetic tunnel junction; and the magnetic tunnel junction and a side wall portion covering a side surface of the magnetic tunnel junction, including the minute particle region, are configured such that only excessive current above a maximum current value necessary for reversing magnetization of the tunnel magnetoresistive effect element without damaging the magnetic tunnel junction bypasses the magnetic tunnel junction and flows through the minute particle region.