# US 12,120,865 B2 · Arrays of double-sided dram cells including capacitors on the frontside and backside of a stacked transistor structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,120,865 B2 - Document ID: US12120865B2 - Status: Granted - Kind: B2 - Application number: 17/132,981 - Filed: 2020-12-23 - Published: 2022-06-23 - Granted: 2024-10-15 - Earliest claimed: 2020-12-23 - Assignees: Intel Corporation - Applicants: Intel Corporation - Inventors: Cheng-Ying Huang; Ashish Agrawal; Gilbert Dewey; Abhishek A. Sharma; Wilfred Gomes; Jack Kavalieros - Web page: https://patentgrep.com/patent/US12120865B2 ## CPC - H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells} - H10B 12/33: {the capacitor extending under the transistor} - H10B 12/03: {Making the capacitor or connections thereto} - H10B 12/05: {Making the transistor} - H10B 12/315: {with the capacitor higher than a bit line} - H10B 53/30: characterised by the memory core region - H10D 30/031: {of thin-film transistors [TFT]} - H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes} - H10D 30/6735: {having gates fully surrounding the channels, e.g. gate-all-around} - H10D 30/674: {characterised by the active materials} - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 62/121: {oriented parallel to substrates} - H10P 72/74: {using temporarily an auxiliary support} - H10B 12/09: {with simultaneous manufacture of the peripheral circuit region and memory cells} - H10P 72/7432: {used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Monolithic two-dimensional (2D) arrays of double-sided DRAM cells including a frontside bit cell over a backside bit cell. Each double-sided cell includes a stacked transistor structure having at least a first transistor over a second transistor. Each double-sided cell further includes a first capacitor on a frontside of the stacked transistor structure and electrically coupled to a source/drain of the first transistor. Each double-sided cell further includes a second capacitor on a backside of the stacked transistor structure and electrically coupled to a source/drain of the second transistor. Frontside cell addressing interconnects are electrically coupled to other terminals of at least the first transistor while one or more backside addressing interconnects are electrically coupled to at least one terminal of the second transistor or second capacitor. ## Claims ### Claim 1 An integrated circuit (IC) comprising: an array of memory cells, wherein individual ones of the memory cells comprise: a stacked field effect transistor structure, comprising: a stack of channel regions comprising a semiconductor material; one or more gate electrodes around the stack of channel regions; and a stack of source and drain regions comprising a first pair of source and drain regions electrically coupled to a first of the channel regions, and over a second pair of source and drain regions electrically coupled to a second of the channel regions; a first capacitor comprising a metal-insulator-metal (MIM) structure on a first side of the stacked transistor structure, wherein the first capacitor comprises a first terminal that is electrically coupled to a first of the first pair of source and drain regions; and a second capacitor comprising a MIM structure on a second side of the stacked transistor structure, opposite the first side, wherein the second capacitor comprises a terminal that is electrically coupled to a first of the second pair of source and drain regions; and cell addressing interconnects coupled to each of the memory cells, wherein the cell addressing interconnects comprise: an interconnect on the first side of the stacked transistor structure and electrically coupled to a terminal of the stacked transistor structure in two or more of the memory cells; and an interconnect on the second side of the stacked transistor structure and electrically coupled to a terminal of the stacked transistor structure or of the second capacitor in two or more of the memory cells. ### Claim 2 (depends on 1) The IC of claim 1, wherein the first pair of source and drain regions is spaced apart from the second pair of source and drain regions by an intervening dielectric material. ### Claim 3 (depends on 1) The IC of claim 1, wherein the cell addressing interconnects further comprise: a first interconnect on the first side of the stacked transistor structure and extending in a first horizontal direction over a row of the memory cells, wherein the first interconnect is electrically coupled to at least one of the gate electrodes in each memory cell of the row of the memory cells; a second interconnect on the first side of the stacked transistor structure and extending in a second horizontal direction, substantially orthogonal to the first direction, over a column of the memory cells, wherein the second interconnect is coupled to a second of the first pair of source and drain regions in each memory cell of the column; and a third interconnect on the second side of the stacked transistor structure, wherein the third interconnect is coupled to one of: a second of the second pair of source and drain regions in each memory cell of the row or the column; a second one of the gate electrodes in each memory cell of the row or the column; or a second terminal of the second capacitor in each memory cell of the row or the column. ### Claim 4 (depends on 3) The IC of claim 3, wherein: a first of the gate electrodes is around the first of the channel regions; a second of the gate electrodes is around the second of the channel regions; the first of the gate electrodes is in contact with a second of the gate electrodes; the second of the gate electrodes is electrically coupled to the first interconnect through only the first of the gate electrodes; and the third interconnect is coupled to the second of the second pair of source and drain regions in each memory cell of the column. ### Claim 5 (depends on 3) The IC of claim 3, wherein the second interconnect is split between two adjacent columns of the memory array, and the second interconnect is coupled to the second of the first pair of source and drain regions in a first memory cell, and is also coupled to a second of a first pair of source and drain regions of an adjacent memory cell within the row. ### Claim 6 (depends on 5) The IC of claim 5, wherein the third interconnect is split between the two adjacent columns of the memory array, the third interconnect is coupled to the second of the second pair of source and drain regions in the first memory cell, and is also coupled to a second of a second pair of source and drain regions in the adjacent memory cell within the row. ### Claim 7 (depends on 3) The IC of claim 3, wherein: a first of the gate electrodes is around the first of the channel regions; a second of the gate electrodes is around the second of the channel regions; the first of the gate electrodes is spaced apart from the second of the gate electrodes by an intervening dielectric material; the second interconnect is coupled to the second of both the first and second pairs of source and drain regions in each memory cell of the column; and the third of the interconnects is coupled to the second of the gate electrodes. ### Claim 8 (depends on 3) The IC of claim 3, wherein: a first of the gate electrodes is around the first of the channel regions; a second of the gate electrodes is around the second of the channel regions; the first of the gate electrodes is in contact with a second of the gate electrode; the second of the gate electrodes is electrically coupled to the first interconnect through only the first of the gate electrodes; the second interconnect is coupled to the second of both the first and second pairs of source and drain regions in each memory cell of the column; and the third interconnect is coupled to the second terminal of the second capacitor in the row or the column. ### Claim 9 (depends on 3) The IC of claim 3, wherein: the second interconnect is split between two adjacent columns of the memory cell array, with the second interconnect coupled to the second of the first pair of source and drain regions in a first memory cell, and also coupled to a second of a first pair of source and drain regions of an adjacent memory cell within the row; and further comprising a fourth interconnect on the first side of the memory cell array, wherein the fourth interconnect is coupled to a second terminal of the first capacitor in the row or the column. ### Claim 10 (depends on 1) The IC of claim 1, wherein: the insulator of the MIM structures comprises a ferroelectric or a dielectric; the channel regions are monocrystalline semiconductor material comprising at least one of silicon or germanium; and the source and drain regions comprise at least one of silicon or germanium and an n-type impurity. ### Claim 11 (depends on 1) The IC of claim 1, further comprising logic circuitry electrically coupled to the memory array, wherein the logic circuitry comprises a plurality of p-type and n-type field effect transistor stack structures within a same plane as the stacked field effect transistor structure of each of the memory cells. ### Claim 12 A computer system, comprising: a power supply; and an IC die coupled to the power supply, wherein the IC die comprises: an array of memory cells, wherein individual ones of the memory cells comprise: a stacked field effect transistor structure, comprising: a stack of channel regions comprising a semiconductor material; one or more gate electrodes around the stack of channel regions; and a stack of source and drain regions comprising a first pair of source and drain regions electrically coupled to a first of the channel regions and over a second pair of source and drain regions electrically coupled to a second of the channel regions; a first capacitor comprising a metal-insulator-metal (MIM) structure on a first side of the stacked transistor structure, wherein the first capacitor comprises a first terminal that is electrically coupled to a first of the first pair of source and drain regions; and a second capacitor comprising a MIM structure on a second side of the stacked transistor structure, opposite the first side, wherein the second capacitor comprises a terminal that is electrically coupled to a first of the second pair of source and drain regions. ### Claim 13 (depends on 12) The computer system of claim 12, wherein: the first pair of source and drain regions is spaced apart from the second pair of source and drain regions by an intervening dielectric material; and further comprising: a first interconnect extending in a first direction on a first side of a row of the memory cells, wherein the first interconnect is electrically coupled to at least one of the gate electrodes in each memory cell of the row; a second interconnect extending in a second direction, substantially orthogonal to the first direction, on the first side of one column of the memory cells, wherein the second interconnect is coupled to a second of the first pair of source and drain regions in each memory cell of the column; and a third interconnect on a second side of the memory cells, opposite the first side, wherein the third interconnect is coupled to one of: a second of the second pair of source and drain regions in each memory cell of the row or column; a second of the gate electrodes in each memory cell of the row or column; or a second terminal of the second capacitor in each memory cell of the row or column. ### Claim 14 (depends on 12) The computer system of claim 12, further comprising a battery coupled to the power supply. ### Claim 15 A method of fabricating an IC comprising an array of memory cells, the method comprising: receiving a workpiece comprising a plurality of transistor stack structures, wherein individual ones of the transistor stack structures comprise: a stack of channel regions comprising a semiconductor material; one or more gate electrodes around the stack of channel regions; and a stack of source and drain regions comprising a first pair of source and drain regions electrically coupled to a first of the channel regions, and over a second pair of source and drain regions electrically coupled to a second of the channel regions; forming a plurality of first capacitors on a first side of the transistor stack structures, wherein individual ones of the first capacitors are electrically coupled to a first of the first pair of source and drain regions in corresponding individual ones of the transistor stack structures; forming, on the first side of the transistor stack structures, cell addressing interconnects to one or more first terminals of each of the transistor stack structures; forming a plurality of second capacitors on a second side of the transistor stack structures, wherein individual ones of the second capacitors are electrically coupled to a first of the second pair of source and drain regions in corresponding individual ones of the transistor stack structures; and forming, on the second side of the transistor stack structures, cell addressing interconnects to one or more second terminals of each of the transistor stack structures. ### Claim 16 (depends on 15) The method of claim 15, wherein forming the cell addressing interconnects further comprises forming, on the second side, contacts to at least one of: a second of the second pair of source and drain regions; or the gate electrodes. ### Claim 17 (depends on 15) The method of claim 15, wherein forming the cell addressing interconnects further comprises: forming a first interconnect extending horizontally in a first direction on the first side and electrically coupled to at least one of the gate electrodes in each memory cell of a row in the array; forming a second interconnect extending horizontally in a second direction, substantially orthogonal to the first direction, on the first side, and electrically coupled to a second of the first pair of source and drain regions in each memory cell of a column in the array. ### Claim 18 (depends on 17) The method of claim 17, wherein forming the cell addressing interconnects further comprises forming a third interconnect on the second side, and electrically coupled to at least one of: a second of the second pair of source and drain regions in each memory cell of the row or column; a second of the gate electrodes in each memory cell of the row or column; or a second terminal of the second capacitor in each memory cell of the row or column. ### Claim 19 (depends on 18) The method of claim 18, wherein: a first of the gate electrodes is around the first of the channel regions; a second of the gate electrodes is around the second of the channel regions; the first of the gate electrodes is in contact with a second of the gate electrodes; forming the first interconnect comprises contacting the first of the gate electrodes; and forming the third interconnect comprising contacting the second of the second pair of source and drain regions in each memory cell of the column. ### Claim 20 (depends on 15) The method of claim 15, further comprising: bonding the first side to a host substrate after forming at least some of the cell addressing interconnects; and removing a donor substrate exposing the second side of the transistor stack structure prior to forming the second capacitors.