# US 12,119,813 B2 · Switch device, electronic equipment, and vehicle > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,813 B2 - Document ID: US12119813B2 - Status: Granted - Kind: B2 - Application number: 18/047,441 - Filed: 2022-10-18 - Published: 2023-04-27 - Granted: 2024-10-15 - Earliest claimed: 2021-10-21 - Assignees: Rohm Co., Ltd. - Applicants: ROHM Co., LTD. - Inventors: Tetsuo Yamato; Shuntaro Takahashi; Kazuki Okuyama - Web page: https://patentgrep.com/patent/US12119813B2 ## CPC - H03K 17/08122: {in field-effect transistor switches} - H03K 17/687: the devices being field-effect transistors - H03K 17/18: Modifications for indicating state of switch - H03K 2217/0063: High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load - H03K 2217/0072: Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract Disclosed is a switch device including a first terminal, a second terminal, a third terminal, a switch element disposed between the first terminal and the second terminal, a control line that reaches a control end of the switch element from the third terminal, a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal, at least one second circuit block, each second circuit block being connected to a corresponding one of branch power supply lines that branch from the control line, a first resistor disposed between the third terminal and the first circuit block, and at least one second resistor, each second resistor being disposed on a corresponding one of the branch power supply lines. ## Claims ### Claim 1 A switch device, comprising: a first terminal; a second terminal; a third terminal; a switch element disposed between the first terminal and the second terminal; a control line that reaches a control end of the switch element from the third terminal; a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal; at least one second circuit block, wherein each of the at least one second circuit block is connected to a corresponding one of branch power supply lines that branch from the control line, and the at least one second circuit block is a status monitoring circuit configured to monitor a status of the switch device; a first resistor disposed between the third terminal and the first circuit block; and at least one second resistor, wherein each of the at least one second resistor is disposed on the corresponding one of the branch power supply lines, the first circuit block and the at least one second circuit block include at least one P-channel metal oxide semiconductor field effect transistor, and the branch power supply lines branch from the control line between the third terminal and the first resistor. ### Claim 2 (depends on 1) The switch device according to claim 1, wherein a resistance value of each of the first resistor and the at least one second resistor is based on a total area of a P-type well that is disposed in the at least one P-channel metal oxide semiconductor field effect transistor of a corresponding one of the first circuit block and the at least one second circuit block. ### Claim 3 (depends on 2) The switch device according to claim 2, wherein the resistance value is larger as the total area is larger. ### Claim 4 (depends on 1) The switch device according to claim 1, wherein a parasitic NPN transistor is formed between a back gate of the at least one P-channel metal oxide semiconductor field effect transistor and the first terminal. ### Claim 5 (depends on 1) The switch device according to claim 1, wherein a parasitic PNP transistor is formed between a source of the at least one P-channel metal oxide semiconductor field effect transistor and the second terminal. ### Claim 6 (depends on 1) The switch device according to claim 1, wherein the first circuit block is disposed adjacent to the first resistor. ### Claim 7 (depends on 1) The switch device according to claim 1, wherein each of the at least one second circuit block is disposed adjacent to a corresponding one of the at least one second resistor. ### Claim 8 (depends on 7) The switch device according to claim 7, wherein the first circuit block, the at least one second circuit block, and the switch element line up along a first direction, the first circuit block and the first resistor line up along a second direction orthogonal to the first direction, and each of the at least one second circuit block and the corresponding one of the at least one second resistor line up along the second direction. ### Claim 9 (depends on 1) Electronic equipment, comprising: the switch device according to claim 1; and an inductive load connected to the switch device. ### Claim 10 (depends on 9) A vehicle, comprising: the electronic equipment according to claim 9. ### Claim 11 A switch device, comprising: a first terminal; a second terminal; a third terminal; a switch element disposed between the first terminal and the second terminal; a control line that reaches a control end of the switch element from the third terminal; a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal; at least one second circuit block, wherein each of the at least one second circuit block is connected to a corresponding one of branch power supply lines that branch from the control line; a first resistor disposed between the third terminal and the first circuit block; and at least one second resistor, wherein each of the at least one second resistor is disposed on the corresponding one of the branch power supply lines, the first circuit block and the at least one second circuit block include at least one P-channel metal oxide semiconductor field effect transistor, a resistance value of each of the first resistor and the at least one second resistor is based on a total area of a P-type well that is disposed in the at least one P-channel metal oxide semiconductor field effect transistor of a corresponding one of the first circuit block and the at least one second circuit block, and the branch power supply lines branch from the control line between the third terminal and the first resistor. ### Claim 12 A switch device, comprising: a first terminal; a second terminal; a third terminal; a switch element disposed between the first terminal and the second terminal; a control line that reaches a control end of the switch element from the third terminal; a first circuit block that is disposed on the control line and is configured to drive the switch element according to a control signal supplied to the third terminal; at least one second circuit block, wherein each of the at least one second circuit block is connected to a corresponding one of branch power supply lines that branch from the control line; a first resistor disposed between the third terminal and the first circuit block; and at least one second resistor, wherein each of the at least one second resistor is disposed on the corresponding one of the branch power supply lines, each of the at least one second circuit block is disposed adjacent to a corresponding one of the at least one second resistor, the first circuit block, the at least one second circuit block, and the switch element line up along a first direction, the first circuit block and the first resistor line up along a second direction orthogonal to the first direction, each of the at least one second circuit block and the corresponding one of the at least one second resistor line up along the second direction, the first circuit block and the at least one second circuit block include at least one P-channel metal oxide semiconductor field effect transistor, and the branch power supply lines branch from the control line between the third terminal and the first resistor.