# US 12,119,618 B2 · Nitride-based semiconductor light-emitting element and manufacturing method thereof, and manufacturing method of nitride-based semiconductor crystal > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,618 B2 - Document ID: US12119618B2 - Status: Granted - Kind: B2 - Application number: 18/312,370 - Filed: 2023-05-04 - Published: 2023-08-31 - Granted: 2024-10-15 - Earliest claimed: 2018-12-11 - Assignees: Nuvoton Technology Corporation Japan - Applicants: Nuvoton Technology Corporation Japan - Inventors: Shuichi Nakazawa; Shinji Yoshida; Isao Kidoguchi - Web page: https://patentgrep.com/patent/US12119618B2 ## CPC - H01S 5/2202: {by making a groove in the upper laser structure} - C23C 16/34: Nitrides {(C23C16/303 takes precedence)} - C23C 16/56: After-treatment - H01S 5/0014: {Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R)} - H01S 5/0421: {characterised by the semiconducting contacting layers (electrodes H01S5/0425)} - H01S 5/2068: {obtained by radiation treatment or annealing} - H01S 5/2214: {based on oxides or nitrides} - H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser} - H10H 20/825: containing nitrogen, e.g. GaN - H01S 5/04252: {characterised by the material} - H01S 5/04253: {having specific optical properties, e.g. transparent electrodes} - H01S 5/04257: {having positive and negative electrodes on the same side of the substrate} - H01S 5/2009: {by using electron barrier layers} - H01S 5/2031: {characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities} - H01S 5/305: {characterised by the doping materials used in the laser structure} - H01S 5/3063: {using Mg} - H01S 5/3213: {asymmetric clading layers} - H01S 2301/176: Specific passivation layers on surfaces other than the emission facet - H01S 2304/00: Special growth methods for semiconductor lasers - H10P 14/3416: {Nitrides} - H10P 14/3442: {N-type} - H10P 14/3444: {P-type} - H10P 14/3446: {Transition metal elements; Rare earth elements} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A manufacturing method of a nitride-based semiconductor light-emitting element includes: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen. In this manufacturing method, a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3. ## Claims ### Claim 1 A manufacturing method of a nitride-based semiconductor light-emitting element, the manufacturing method comprising: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen, wherein a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant, and a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3. ### Claim 2 (depends on 1) The manufacturing method according to claim 1, wherein the annealing includes: first annealing of annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an inert gas atmosphere; and second annealing of annealing the p-type nitride-based semiconductor layer at a temperature of at most 800 degrees Celsius in an oxidizing gas atmosphere after the first annealing. ### Claim 3 (depends on 2) The manufacturing method according to claim 2, further comprising: forming a ridge by removing part of the p-type nitride-based semiconductor layer, wherein the forming of the ridge is performed after the first annealing, before the second annealing. ### Claim 4 (depends on 1) The manufacturing method according to claim 1, further comprising: forming, on the p-type nitride-based semiconductor layer, an oxide selected from a group consisting of tantalum, vanadium, tin, indium, molybdenum, tungsten, niobium, titanium, cobalt, manganese, yttrium, and silicon. ### Claim 5 (depends on 1) The manufacturing method according to claim 1, further comprising: setting an oxygen concentration of the p-type nitride-based semiconductor layer higher than an oxygen concentration of the light emission layer. ### Claim 6 (depends on 1) The manufacturing method according to claim 1, wherein the p-type nitride-based semiconductor layer contains aluminum. ### Claim 7 (depends on 1) The manufacturing method according to claim 1, wherein the light emission layer contains indium. ### Claim 8 (depends on 1) The manufacturing method according to claim 1, further comprising: forming an undoped nitride-based semiconductor layer provided between the light emission layer and the p-type nitride-based semiconductor layer. ### Claim 9 (depends on 4) The manufacturing method according to claim 4, wherein the oxide is an electrically-conductive translucent material. ### Claim 10 (depends on 2) The manufacturing method according to claim 2, wherein the oxidizing gas atmosphere is an atmosphere containing an oxygen gas. ### Claim 11 (depends on 2) The manufacturing method according to claim 2, further comprising: forming a ridge by removing part of the p-type nitride-based semiconductor layer, wherein the first annealing and the second annealing are performed after the forming of the ridge. ### Claim 12 A manufacturing method of a nitride-based semiconductor light-emitting element, the manufacturing method comprising: forming an n-type nitride-based semiconductor layer; forming, on the n-type nitride-based semiconductor layer, a light emission layer including a nitride-based semiconductor; forming, on the light emission layer, a p-type nitride-based semiconductor layer while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; and annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an atmosphere not containing hydrogen, wherein a hydrogen concentration of the p-type nitride-based semiconductor layer after the annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant, a hydrogen concentration of the light emission layer is at most 2.0×1017 atom/cm3, and the annealing includes: first annealing of annealing the p-type nitride-based semiconductor layer at a temperature of at least 800 degrees Celsius in an inert gas atmosphere; and second annealing of annealing the p-type nitride-based semiconductor layer at a temperature of at most 800 degrees Celsius in an oxidizing gas atmosphere after the first annealing. ### Claim 13 (depends on 12) The manufacturing method according to claim 12, further comprising: setting an oxygen concentration of the p-type nitride-based semiconductor layer higher than an oxygen concentration of the light emission layer. ### Claim 14 (depends on 12) The manufacturing method according to claim 12, further comprising: forming a ridge by removing part of the p-type nitride-based semiconductor layer, wherein the forming of the ridge is performed after the first annealing, before the second annealing. ### Claim 15 (depends on 12) The manufacturing method according to claim 12, further comprising: forming, on the p-type nitride-based semiconductor layer, an oxide selected from a group consisting of tantalum, vanadium, tin, indium, molybdenum, tungsten, niobium, titanium, cobalt, manganese, yttrium, and silicon. ### Claim 16 (depends on 12) The manufacturing method according to claim 12, wherein the p-type nitride-based semiconductor layer contains aluminum. ### Claim 17 (depends on 12) The manufacturing method according to claim 12, wherein the oxidizing gas atmosphere is an atmosphere containing an oxygen gas. ### Claim 18 (depends on 12) The manufacturing method according to claim 12, further comprising: forming a ridge by removing part of the p-type nitride-based semiconductor layer, wherein the first annealing and the second annealing are performed after the forming of the ridge. ### Claim 19 A manufacturing method of a nitride-based semiconductor crystal, the manufacturing method comprising: forming, in an atmosphere containing a hydrogen gas, a p-type nitride-based semiconductor crystal while doping the p-type nitride-based semiconductor layer with a p-type dopant at a concentration of at least 2.0×1018 atom/cm3; first annealing of annealing the p-type nitride-based semiconductor crystal at a temperature of at least 800 degrees Celsius in an inert gas atmosphere; and second annealing of annealing the p-type nitride-based semiconductor crystal at a temperature of at most 800 degrees Celsius in an oxidizing gas atmosphere after the first annealing, wherein a hydrogen concentration of the p-type nitride-based semiconductor crystal after the second annealing is at most 5.0×1018 atom/cm3 and at most 5% of the concentration of the p-type dopant. ### Claim 20 (depends on 19) The manufacturing method according to claim 19, wherein the oxidizing gas atmosphere is an atmosphere containing an oxygen gas. ### Claim 21 (depends on 19) The manufacturing method according to claim 19, wherein the forming of the p-type nitride-based semiconductor crystal is performed by metalorganic vapor-phase epitaxy. ### Claim 22 (depends on 19) The manufacturing method according to claim 19, wherein the p-type nitride-based semiconductor crystal contains aluminum.