# US 12,119,617 B2 · Light emitting element

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- Number: US 12,119,617 B2
- Document ID: US12119617B2
- Status: Granted
- Kind: B2
- Application number: 16/978,531
- Filed: 2019-02-06
- Published: 2020-12-24
- Granted: 2024-10-15
- Earliest claimed: 2018-03-06
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Kentaro Fujii; Tatsushi Hamaguchi; Rintaro Koda
- Web page: https://patentgrep.com/patent/US12119617B2

## CPC

- H01S 5/18361: {Structure of the reflectors, e.g. hybrid mirrors}
- H01S 5/04253: {having specific optical properties, e.g. transparent electrodes}
- H01S 5/04254: {characterised by the shape}
- H01S 5/18311: {using selective oxidation}
- H01S 5/18341: {Intra-cavity contacts}
- H01S 5/18358: {containing spacer layers to adjust the phase of the light wave in the cavity}
- H01S 5/18369: {based on dielectric materials}
- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- H01S 5/34346: {characterised by the materials of the barrier layers}
- H01S 5/18322: {Position of the structure}
- H01S 5/18388: {Lenses}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A light emitting element includes a stacked structure including, in a stacked state, a first light reflection layer 41 in which a plurality of thin films is stacked, a light emitting structure 20, and a second light reflection layer 42 in which a plurality of thin films is stacked. The light emitting structure includes a first compound semiconductor layer 21, an active layer 23 and, a second compound semiconductor layer 22 which are stacked. The light emitting structure 20 is formed with a light absorbing material layer 71 (32) in parallel to a virtual plane occupied by the active layer 23. Let the oscillation wavelength be λ0, let the equivalent refractive index from the active layer to the light absorbing material layer be neq, let the optical distance from the active layer to the light absorbing material layer be Lop, and let Λ≡{(2m+1)λ0}/(4neq) (where m is an integer of equal to or more than 0), then, the value of Lop is a value different from Λ, and the thickness Tave of the second light reflection layer 42 is a value different from the theoretical thickness TDBR of the second light reflection layer 42.

## Claims

### Claim 1

A light emitting element comprising:
a stacked structure including, in a stacked state,
a first light reflection layer in which a plurality of thin films is stacked,
a light emitting structure, and
a second light reflection layer in which a plurality of thin films is stacked,
wherein the light emitting structure includes
a first compound semiconductor layer,
an active layer, and
a second compound semiconductor layer, that are stacked from a first light reflection layer side,
the light emitting structure is formed with a light absorbing material layer in parallel to a virtual plane occupied by the active layer, and
where a wavelength of light which is emitted from the active layer and which has a maximum intensity be λ0, an equivalent refractive index of layers occupying layers ranging from the active layer to the light absorbing material layer is neq, an optical distance from the active layer to the light absorbing material layer is Lop, and let λ≡{(2m+1)λ0}/(4neq) (where m is an integer of equal to or more than 0), then,
a value of Lop is a value different from A, and
a thickness Tave of a light reflection layer on a side on which the light absorbing material layer is located is a value different from a thickness TDBR, and
where refractive indexes of thin films constituting the light reflection layer on the side on which the light absorbing material layer is located is ni and the total number of the thin films is 1, then,
TDBR=Σ(Λ0/4ni),
i=1, 2, 3, . . . , 1, and
“Σ” means to sum up from i=1 to i=1,
wherein the first compound semiconductor layer, the active layer, and the second compound semiconductor layer include a GaN-based compound semiconductor material.

### Claim 2 (depends on 1)

The light emitting element according to claim 1,
wherein the value of Lop is
0.95×Λ≤Lop≤0.99×Λ
and TDBR<Tave.

### Claim 3 (depends on 1)

The light emitting element according to claim 1,
wherein the value of Lop is
0.95×Λ≤Lop≤0.99×Λ
and
a wavelength of a stop band center of the light reflection layer on the side on which the light absorbing material layer is located is longer than λ0.

### Claim 4 (depends on 1)

The light emitting element according to claim 1,
wherein the value of Lop is
1.01×Λ≤Lop≤1.05×Λ
and Tave<TDBR.

### Claim 5 (depends on 1)

The light emitting element according to claim 1,
wherein the value of Lop is
1.01×Λ≤Lop≤1.05×Λ
and
a wavelength of a stop band center of the light reflection layer on the side on which the light absorbing material layer is located is shorter than λ0.

### Claim 6 (depends on 1)

The light emitting element according to claim 1,
wherein the light absorbing material layer is located in a vicinity of a minimum amplitude portion generated in a standing wave of light formed inside the stacked structure.

### Claim 7 (depends on 1)

The light emitting element according to claim 1,
wherein the active layer is located in a vicinity of a maximum amplitude portion generated in a standing wave of light formed inside the stacked structure.

### Claim 8 (depends on 1)

The light emitting element according to claim 1,
wherein the light absorbing material layer has a light absorption coefficient of equal to or more than twice a light absorption coefficient of a compound semiconductor constituting the light emitting structure.

### Claim 9 (depends on 1)

The light emitting element according to claim 1,
wherein the light absorbing material layer includes at least one material selected from a group including a compound semiconductor material narrower in bandgap than a compound semiconductor constituting the light emitting structure, a compound semiconductor material doped with an impurity, a transparent conductive material, and a dielectric material having a light absorption characteristic.

### Claim 10

A light emitting element comprising:
a stacked structure including, in a stacked state,
a first light reflection layer,
a light emitting structure, and
a second light reflection layer,
wherein the light emitting structure includes
a first compound semiconductor layer,
an active layer, and
a second compound semiconductor layer, that are stacked from a first light reflection layer side,
the light emitting structure is formed, at an end portion thereof, with a light absorbing material layer in parallel to a virtual plane occupied by the active layer,
a dielectric layer is formed between the light absorbing material layer and a light reflection layer on a side on which the light absorbing material layer is located, and
where a wavelength of light which is emitted from the active layer and which has a maximum intensity be λ0 let an equivalent refractive index of layers occupying layers ranging from the active layer to the light absorbing material layer is neq, an optical distance from the active layer to the light absorbing material layer be Lop, a refractive index of the dielectric layer is ndel, let an optical distance from the light absorbing material layer to an interface between the light reflection layer on the side on which the light absorbing material layer is located and the dielectric layer is Ldel, and Λ={(2m+1)λ0}/(4neq) (where m is an integer of equal to or more than 0), then
a value of Lop is a value different from A, and
Ldel ≠λ0/(4ndel).

### Claim 11 (depends on 10)

The light emitting element according to claim 10,
wherein the value of Lop is
0.95×Λ≤Lop≤0.99×Λ
and
λ0/(4ndel)<Ldel.

### Claim 12 (depends on 6)

The light emitting element according to claim 6,
wherein the value of Lop is
1.01×Λ≤Lop≤1.05×Λ
and
Ldel<λ0/(4ndel).