# US 12,119,437 B2 · Light emitting device package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,437 B2 - Document ID: US12119437B2 - Status: Granted - Kind: B2 - Application number: 17/533,949 - Filed: 2021-11-23 - Published: 2022-06-30 - Granted: 2024-10-15 - Earliest claimed: 2020-12-29 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Soonwon Jeong; Yeonjun Sung; Jongho Lim; Joonwoo Jeon; Hanna Heo; Hyongsik Won; Sangbok Yun - Web page: https://patentgrep.com/patent/US12119437B2 ## CPC - H10H 20/8583: {not being in contact with the bodies} - H10H 20/853: characterised by their shape - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/8582: {characterised by their shape} - H10W 90/00: Package configurations - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8514: {characterised by their shape, e.g. plate or foil} - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10W 72/0198: {batch processes} - H10W 72/07336: {Soldering or alloying} - H10W 72/07532: {Compression bonding, e.g. thermocompression bonding} - H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding} - H10W 72/07554: {changes in dispositions} - H10W 72/30: Die-attach connectors - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5453: {connecting between multiple bond pads on a chip, e.g. daisy chain} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/5473: {multiple bond wires connected to a common bond pad} - H10W 72/552: {comprising metals or metalloids, e.g. silver} - H10W 72/5522: {comprising gold [Au]} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/926: {Multiple bond pads having different sizes} - H10W 72/932: {Plan-view shape, i.e. in top view} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/753: {between laterally-adjacent chips} - H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL} - H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting device package includes a first molding member surrounding a heat dissipation frame, a first electrode frame, and a second electrode frame; a first semiconductor light emitting device on the heat dissipation frame and having first and second pads; a second semiconductor light emitting device on the heat dissipation frame and having first and second pads; a wavelength conversion layer on the first and second semiconductor light emitting structures; a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame; a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame; and an inter-chip bonding wire connecting the second pad of the first semiconductor light emitting device to the first pad of the second semiconductor light emitting device. ## Claims ### Claim 1 A light emitting device package, comprising: a heat dissipation frame; a first electrode frame and a second electrode frame arranged adjacent to one side of the heat dissipation frame; a first molding surrounding the heat dissipation frame, the first electrode frame, and the second electrode frame; a first semiconductor light emitting device disposed on the heat dissipation frame, the first semiconductor light emitting device comprising a first semiconductor light emitting structure and a first pad and a second pad connected to the first semiconductor light emitting structure; a second semiconductor light emitting device disposed on the heat dissipation frame, the second semiconductor light emitting device comprising a second semiconductor light emitting structure and a first pad and a second pad connected to the second semiconductor light emitting structure; a wavelength conversion layer disposed on the first semiconductor light emitting device and the second semiconductor light emitting device; a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame; a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame; an inter-chip bonding wire connecting the second pad of the first semiconductor light emitting device to the first pad of the second semiconductor light emitting device; and a second molding disposed on the first molding and surrounding the first semiconductor light emitting device, the second semiconductor light emitting device, the first bonding wire, the second bonding wire, and the inter-chip bonding wire, wherein: the heat dissipation frame includes a groove formed between the first semiconductor light emitting device and the second semiconductor light emitting device, or the first semiconductor light emitting device and the second semiconductor light emitting device are provided on a same substrate. ### Claim 2 (depends on 1) The light emitting device package of claim 1, wherein the inter-chip bonding wire has a height lower than a level of an upper surface of the wavelength conversion layer. ### Claim 3 (depends on 1) The light emitting device package of claim 1, wherein the wavelength conversion layer is exposed from an upper surface of the second molding. ### Claim 4 (depends on 3) The light emitting device package of claim 3, wherein the wavelength conversion layer has an upper surface coplanar with the upper surface of the second molding. ### Claim 5 (depends on 1) The light emitting device package of claim 1, wherein each of the first bonding wire and the second bonding wire has a height lower than a level of an upper surface of the wavelength conversion layer. ### Claim 6 (depends on 1) The light emitting device package of claim 1, wherein each of the first molding and the second molding comprises a resin that includes a high-reflective powder. ### Claim 7 (depends on 1) The light emitting device package of claim 1, wherein the first pad and the second pad of the first semiconductor light emitting device and the first pad and the second pad of the second semiconductor light emitting device are arranged linearly along the one side of the heat dissipation frame. ### Claim 8 (depends on 1) The light emitting device package of claim 1, wherein the first semiconductor light emitting device comprises a first substrate having an upper surface divided into a first area adjacent to the one side of the heat dissipation frame and a second area other than the first area, and a lower surface in contact with the heat dissipation frame, wherein the first pad and the second pad of the first semiconductor light emitting device are disposed in the first area of the first substrate, and the first semiconductor light emitting structure is disposed in the second area of the first substrate, wherein the second semiconductor light emitting device comprises a second substrate having an upper surface divided into a first area adjacent to the one side of the heat dissipation frame and a second area other than the first area, and a lower surface in contact with the heat dissipation frame, and wherein the first pad and the second pad of the second semiconductor light emitting device are disposed in the first area of the second substrate, and the second semiconductor light emitting structure is disposed in the second area of the second substrate. ### Claim 9 (depends on 8) The light emitting device package of claim 8, further comprising: a thermal conductive bonding layer disposed between the first substrate and the second substrate, and the heat dissipation frame, such that the first substrate and the second substrate are on one side of the thermal conductive bonding layer and the heat dissipation frame is on another side of the thermal conductive bonding layer. ### Claim 10 (depends on 1) The light emitting device package of claim 1, wherein the heat dissipation frame includes the groove formed between the first semiconductor light emitting device and the second semiconductor light emitting device. ### Claim 11 (depends on 1) The light emitting device package of claim 1, wherein the first semiconductor light emitting device and the second semiconductor light emitting device are provided on a same substrate, wherein the same substrate has an upper surface divided into a first area adjacent to the one side of the heat dissipation frame and a second area other than the first area, and a lower surface in contact with the heat dissipation frame, and wherein the first pad and the second pad of the first semiconductor light emitting device and the first pad and the second pad of the second semiconductor light emitting device are disposed side by side in the first area of the same substrate, and the first semiconductor light emitting structure and the second semiconductor light emitting structure are disposed side by side in the second area of the same substrate. ### Claim 12 (depends on 1) The light emitting device package of claim 1, wherein the wavelength conversion layer comprises a first wavelength conversion layer and a second wavelength conversion layer disposed on the first semiconductor light emitting structure and the second semiconductor light emitting structure, respectively. ### Claim 13 (depends on 1) The light emitting device package of claim 1, wherein the first molding comprises a sidewall structure surrounding the heat dissipation frame, the first electrode frame, and the second electrode frame. ### Claim 14 A light emitting device package, comprising: a heat dissipation frame; a first electrode frame and a second electrode frame arranged adjacent to one side of the heat dissipation frame; an electrodeless frame disposed between the first electrode frame and the second electrode frame; a first molding surrounding the heat dissipation frame, the first electrode frame, the second electrode frame, and the electrodeless frame; at least one reinforcing molding disposed on the first molding and covering one area of the electrodeless frame and at least one area of the first electrode frame or the second electrode frame; a first semiconductor light emitting device disposed on the heat dissipation frame, the first semiconductor light emitting device comprising a first semiconductor light emitting structure and a first pad and a second pad connected to the first semiconductor light emitting structure; a second semiconductor light emitting device disposed on the heat dissipation frame, the second semiconductor light emitting device comprising a second semiconductor light emitting structure and a first pad and a second pad connected to the second semiconductor light emitting structure; a wavelength conversion layer disposed on the first semiconductor light emitting device and the second semiconductor light emitting device; a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame; a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame; a first inter-chip bonding wire connecting the second pad of the first semiconductor light emitting device to the electrodeless frame; a second inter-chip bonding wire connecting the first pad of the second semiconductor light emitting device to the electrodeless frame; and a second molding surrounding the first semiconductor light emitting device, the second semiconductor light emitting device, the first bonding wire, the second bonding wire, the first inter-chip bonding wire, and the second inter-chip bonding wire, wherein the at least one reinforcing molding comprises: a first reinforcing molding comprising a first body that covers a first area of the electrodeless frame and one area of the first electrode frame; and a second reinforcing molding comprising a second body that covers a second area of the electrodeless frame and one area of the second electrode frame. ### Claim 15 (depends on 14) The light emitting device package of claim 14, wherein a first end of the first body of the first reinforcing molding is on the first area, and a second end of the first body, opposite to the first end of the first body, is on the one area of the first electrode frame, and a first end of the second body of the second reinforcing molding is on the second area, and a second end of the second body, opposite to the first end of the second body, is on the one area of the second electrode frame. ### Claim 16 (depends on 15) The light emitting device package of claim 15, wherein at least one of the first reinforcing molding and the second reinforcing molding comprises a plurality of reinforcing moldings. ### Claim 17 (depends on 14) The light emitting device package of claim 14, wherein the at least one reinforcing molding comprises a same material as a material of the first molding. ### Claim 18 (depends on 14) The light emitting device package of claim 14, wherein the first molding comprises a sidewall structure that surrounds the heat dissipation frame, the first electrode frame, the second electrode frame, and the electrodeless frame, and wherein an upper surface of the at least one reinforcing molding is at a same height as an upper surface of the sidewall structure of the first molding. ### Claim 19 A light emitting device package, comprising: a heat dissipation frame; a first electrode frame and a second electrode frame arranged adjacent to one side of the heat dissipation frame; a first molding surrounding the heat dissipation frame, the first electrode frame, and the second electrode frame; a plurality of semiconductor light emitting devices disposed on the heat dissipation frame along the one side of the heat dissipation frame and each comprising a first pad and a second pad, the plurality of semiconductor light emitting devices comprising a first semiconductor light emitting device disposed at one end of the plurality of semiconductor light emitting devices, and a second semiconductor light emitting device disposed at an opposite end of the plurality of semiconductor light emitting devices; a wavelength conversion layer disposed on the plurality of semiconductor light emitting devices; a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame; a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame; a plurality of inter-chip bonding wires that each connect the first pad of a respective one of the plurality of semiconductor light emitting devices to the second pad of another respective one of the plurality of semiconductor light emitting devices that is adjacent to the respective one of the plurality of semiconductor light emitting devices; and a second molding surrounding the plurality of semiconductor light emitting devices, the first bonding wire, the second bonding wire, and the plurality of inter-chip bonding wires, wherein: the heat dissipation frame includes a groove formed between the first semiconductor light emitting device and the second semiconductor light emitting device, or the first semiconductor light emitting device and the second semiconductor light emitting device are provided on a same substrate. ### Claim 20 (depends on 19) The light emitting device package of claim 19, wherein the wavelength conversion layer has an upper surface coplanar with an upper surface of the second molding, and wherein at least one inter-chip bonding wire from among the plurality of inter-chip bonding wires has a height lower than a level of the upper surface of the wavelength conversion layer.