# US 12,119,426 B2 · Light emitting device and production method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,426 B2 - Document ID: US12119426B2 - Status: Granted - Kind: B2 - Application number: 17/301,578 - Filed: 2021-04-08 - Published: 2021-07-22 - Granted: 2024-10-15 - Earliest claimed: 2018-10-11 - Assignees: Quanzhou Sanan Semiconductor Technology Co., Ltd. - Applicants: Xiamen San'an Optoelectronics Technology Co., Ltd. - Inventors: Shaohua Huang; Xiaoqiang Zeng; Canyuan Zhang; Jianfeng Yang - Web page: https://patentgrep.com/patent/US12119426B2 ## CPC - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/01: Manufacture or treatment - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8582: {characterised by their shape} - H10H 20/018: {Bonding of wafers} - H10H 20/032: {of electrodes} - H10H 20/0365: {of means for heat extraction or cooling} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light emitting device includes at least one light emitting unit that includes an insulating layer, a first electrically conductive layer, and a semiconductor layer structure having at least one recess. The first electrically conductive layer and the insulating layer extend into the recess. A contact area between a conductive protrusion portion of the first electrically conductive layer and a first-type semiconductor layer of the semiconductor layer structure is larger than 1.5% of an area of a bottom surface of the first-type semiconductor layer. A method for producing the light emitting device is also disclosed. ## Claims ### Claim 1 A light emitting device comprising: a supporting substrate; at least one light emitting unit including a first electrically conductive layer having a conductive base portion that is disposed on said supporting substrate, and a conductive protrusion portion that extends from said conductive base portion away from said supporting substrate, an insulating layer having an insulating base portion that is disposed on said first electrically conductive layer opposite to said supporting substrate, and an insulating protrusion portion that extends form said insulating base portion away from said supporting substrate, said insulating protrusion portion surrounding said conductive protrusion portion of said first electrically conductive layer, and a semiconductor layer structure disposed on said insulating layer and said first electrically conductive layer opposite to said supporting substrate, and including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, said second-type semiconductor layer, said active layer, and said first-type semiconductor layer being sequentially disposed on said insulating base portion of said insulating layer in such order, said semiconductor layer structure having at least one recess that extends from said second-type semiconductor layer through said active layer to said first-type semiconductor layer, said conductive protrusion portion of said first electrically conductive layer and said insulating protrusion portion of said insulating layer extending into said recess, said conductive protrusion portion of said first electrically conductive layer being disposed in contact with a bottom surface of said first-type semiconductor layer facing toward said supporting substrate; a second electrically conductive layer disposed on said insulating base portion of said insulating layer opposite to said first electrically conductive layer, said second electrically conductive layer being electrically connected with said semiconductor layer structure; a first electrode electrically connected to said first electrically conductive layer; and a second electrode electrically connected to said second electrically conductive layer, wherein a contact area between said conductive protrusion portion of said first electrically conductive layer and said first-type semiconductor layer is larger than 1.5% of an area of said bottom surface of said first-type semiconductor layer. ### Claim 2 (depends on 1) The light emitting device as claimed in claim 1, further comprising a plurality of said light emitting units, said semiconductor layer structures of said light emitting units being spaced apart from each other, said second electrically conductive layer being disposed on said insulating base portion of said insulating layer of one of said light emitting units opposite to said first electrically conductive layer of said one of said light emitting units, said second electrically conductive layer being electrically connected to a lower surface of said second-type semiconductor layer of said semiconductor layer structure of said one of said light emitting units, said lower surface of said second-type semiconductor layer being opposite to said active layer of said semiconductor layer structure of said one of said light emitting units, said first electrode being electrically connected to said first electrically conductive layer of another one of said light emitting units, said first electrically conductive layer of each of said light emitting units further having a conductive connecting portion that extends from said conductive base portion away from said supporting substrate and is spaced apart from said conductive protrusion portion, said semiconductor layer structures of two adjacent ones of said light emitting units being electrically connected to each other through said conductive connecting portion, said insulating layer of each of said light emitting units separating said first electrically conductive layer of a same one of said light emitting units from one of said second electrically conductive layer and said first electrically conductive layer of a different one of said light emitting units. ### Claim 3 (depends on 2) The light emitting device as claimed in claim 2, wherein said conductive connecting portion of said first electrically conductive layer of each of said light emitting units is partially exposed. ### Claim 4 (depends on 2) The light emitting device as claimed in claim 2, wherein said conductive connecting portion of said first electrically conductive layer of at least one of said light emitting units is under and covered by said semiconductor layer structure of an adjacent one of said light emitting units. ### Claim 5 (depends on 2) The light emitting device as claimed in claim 2, wherein said light emitting units are identical in structure. ### Claim 6 (depends on 2) The light emitting device as claimed in claim 2, wherein said semiconductor layer structures of said light emitting units are formed through a growth process with a growth substrate. ### Claim 7 (depends on 1) The light emitting device as claimed in claim 1, wherein said contact area between said conductive protrusion portion of said first electrically conductive layer and said first-type semiconductor layer is not less than 4% of said area of said bottom surface of said first-type semiconductor layer and is not greater than 6% of said area of said bottom surface of first-type semiconductor layer. ### Claim 8 (depends on 1) The light emitting device as claimed in claim 1, wherein at least one of said first electrically conductive layer or said second electrically conductive layers is made from a metal material. ### Claim 9 (depends on 1) The light emitting device as claimed in claim 1, wherein said semiconductor layer structure has a height that is not larger than 7 μm. ### Claim 10 (depends on 1) The light emitting device as claimed in claim 1, wherein said supporting substrate is made from a ceramic material. ### Claim 11 (depends on 2) The light emitting device as claimed in claim 2, wherein said first electrically conductive layer of one of said two adjacent ones of said light emitting units is separated from said first electrically conductive layer of the other one of said two adjacent ones of said light emitting units by said insulating layer of the other one of said two adjacent ones of said light emitting units. ### Claim 12 (depends on 1) The light emitting device as claimed in claim 1, wherein said first and second electrodes are disposed adjacent to a periphery of said supporting substrate. ### Claim 13 (depends on 1) The light emitting device as claimed in claim 1, wherein said conductive base portion of said first electrically conductive layer, said insulating base portion of said insulating layer, and said second electrically conductive layer are sequentially disposed on said supporting substrate in such order. ### Claim 14 (depends on 2) The light emitting device as claimed in claim 2, wherein an amount of said light emitting units ranges from 3 to 9. ### Claim 15 (depends on 1) The light emitting device as claimed in claim 1, wherein said first electrically conductive layer of said light emitting unit further has a conductive connecting portion that extends from said conductive base portion of said first electrically conductive layer away from said supporting substrate and is spaced apart from said conductive protrusion portion of said first electrically conductive layer, said first electrode being disposed on said conductive connecting portion.