# US 12,119,418 B2 · Method of processing inconsistencies in solar cell devices and devices formed thereby > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,418 B2 - Document ID: US12119418B2 - Status: Granted - Kind: B2 - Application number: 18/346,477 - Filed: 2023-07-03 - Published: 2023-11-02 - Granted: 2024-10-15 - Earliest claimed: 2017-03-31 - Assignees: The Boeing Company - Applicants: The Boeing Company - Inventors: Eric Rehder - Web page: https://patentgrep.com/patent/US12119418B2 ## CPC - H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - H10F 77/707: {of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate} - H02S 50/10: Testing of PV devices, e.g. of PV modules or single PV cells (testing of semiconductor devices during manufacturing {H10P74/00}) - H10F 71/10: the devices comprising amorphous semiconductor material - H10F 71/135: {Application of a bias; Current injection} - H10F 71/137: {Batch treatment of the devices} - H10F 77/939: {Output lead wires or elements} - Y02E 10/50: Photovoltaic [PV] energy - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H02S: GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H1/12; light sensitive inorganic semiconductor devices H10F; light sensitive organic semiconductor devices H10K30/00; thermoelectric devices H10N10/00; pyroelectric devices H10N15/00) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract The present disclosure is directed to a method of processing a solar cell device. The method comprises detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein. A deposition pattern is determined based on the location of the at least one inconsistency. A material is selectively deposited on the substrate according to the deposition pattern. ## Claims ### Claim 1 A method of processing a solar cell device, the method comprising: detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein; determining a deposition pattern based on a location of the at least one inconsistency; and selectively depositing a material on the substrate according to the deposition pattern, wherein selectively depositing the material comprises selectively depositing a patterned mask configured to cover the at least one inconsistency, the patterned mask causing a subsequently deposited conductive line to be positioned proximate to, but not over, the at least one inconsistency, the conductive line forming a portion of a front wiring on the solar cell device, wherein the conductive line comprises a major conductive portion and a minor conductive portion that deviates from the major conductive portion, the major conductive portion comprising a first part on a first side of the at least one inconsistency and a second part on a second side of the at least one inconsistency that is opposite the first side, the minor conductive portion electrically connecting the first part and the second part, and wherein the material comprises a polymer. ### Claim 2 (depends on 1) The method of claim 1, wherein determining a deposition pattern based on the location of the at least one inconsistency comprises: providing an initial wiring scheme for the solar cell device; determining that implementing a portion of the initial wiring scheme will result in a conductive line that overlays the inconsistency; and determining a modified wiring scheme that avoids the at least one inconsistency. ### Claim 3 (depends on 1) The method of claim 1, wherein the conductive line comprises one or more metals selected from aluminum, gold, silver, copper and nickel. ### Claim 4 (depends on 1) The method of claim 1, further comprising depositing a conductive line on areas of the substrate not protected by the patterned mask, the conductive line being selectively deposited by electroplating. ### Claim 5 (depends on 1) The method of claim 1, further comprising depositing a conductive line on areas of the substrate not protected by the patterned mask, the conductive line being selectively deposited by a metal ink deposition process, wherein the patterned mask controls a dimension of the conductive line. ### Claim 6 (depends on 1) The method of claim 1, further comprising depositing a metal layer over the patterned mask and then removing the patterned mask from the semiconductor substrate to pattern the metal layer. ### Claim 7 (depends on 1) The method of claim 1, wherein the patterned mask comprises a patterned radiation mask, the patterned radiation mask being deposited over a photoresist layer over the semiconductor substrate. ### Claim 8 (depends on 7) The method of claim 7, further comprising exposing the photoresist layer and the patterned radiation mask to radiation and developing the photoresist layer to form a photoresist pattern. ### Claim 9 (depends on 1) The method of claim 1, further comprising: selectively depositing an insulating layer over the at least one inconsistency. ### Claim 10 (depends on 9) The method of claim 9, wherein the insulating layer comprises an oxide ceramic. ### Claim 11 (depends on 1) The method of claim 1, wherein both detecting the at least one inconsistency and selectively depositing the material on the substrate are carried out using a single apparatus. ### Claim 12 A method of processing a solar cell device, the method comprising: detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein; determining a deposition pattern based on a location of the at least one inconsistency, wherein determining the deposition pattern comprises: providing an initial wiring scheme for the solar cell device; determining that implementing a portion of the initial wiring scheme will result in a conductive line that overlays the inconsistency; and determining a modified wiring scheme that avoids the at least one inconsistency; and selectively depositing a material on the substrate according to the deposition pattern, wherein selectively depositing the material comprises selectively depositing a patterned mask configured to cover the at least one inconsistency, the patterned mask causing a subsequently deposited conductive line to be positioned proximate to, but not over, the at least one inconsistency, the conductive line forming a portion of a front wiring on the solar cell device, wherein the conductive line comprises a major conductive portion and a minor conductive portion that deviates from the major conductive portion, the major conductive portion comprising a first part on a first side of the at least one inconsistency and a second part on a second side of the at least one inconsistency that is opposite the first side, the minor conductive portion electrically connecting the first part and the second part, and wherein the material comprises a polymer. ### Claim 13 (depends on 12) The method of claim 12, wherein the patterned mask comprises a patterned radiation mask, the patterned radiation mask being deposited over a photoresist layer over the semiconductor substrate. ### Claim 14 (depends on 12) The method of claim 12, further comprising: selectively depositing an insulating layer over the at least one inconsistency. ### Claim 15 (depends on 12) The method of claim 12, wherein the conductive line comprises one or more metals selected from aluminum, gold, silver, copper and nickel. ### Claim 16 (depends on 12) The method of claim 12, further comprising depositing a conductive line on areas of the substrate not protected by the patterned mask, the conductive line being selectively deposited by electroplating. ### Claim 17 (depends on 12) The method of claim 12, further comprising depositing a conductive line on areas of the substrate not protected by the patterned mask, the conductive line being selectively deposited by a metal ink deposition process, wherein the patterned mask controls a dimension of the conductive line. ### Claim 18 (depends on 12) The method of claim 12, further comprising depositing a metal layer over the patterned mask and then removing the patterned mask from the semiconductor substrate to pattern the metal layer. ### Claim 19 (depends on 13) The method of claim 13, further comprising exposing the photoresist layer and the patterned radiation mask to radiation and developing the photoresist layer to form a photoresist pattern. ### Claim 20 (depends on 14) The method of claim 14, wherein the insulating layer comprises an oxide ceramic.