# US 12,119,417 B2 · Optical semiconductor element, optical semiconductor device, optical transmission system, and method of manufacturing optical semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,417 B2 - Document ID: US12119417B2 - Status: Granted - Kind: B2 - Application number: 17/335,201 - Filed: 2021-06-01 - Published: 2021-09-16 - Granted: 2024-10-15 - Earliest claimed: 2019-02-07 - Assignees: FUJIFILM Business Innovation Corp. - Applicants: FUJIFILM Business Innovation Corp. - Inventors: Satoshi Inada; Kenichi Ono; Takeshi Minamiru; Akemi Murakami; Junichiro Hayakawa; Tsutomu Otsuka - Web page: https://patentgrep.com/patent/US12119417B2 ## CPC - H10F 77/206: {for devices having potential barriers} - H01S 5/0208: {Semi-insulating substrates} - H01S 5/0239: Combinations of electrical or optical elements - H01S 5/0425: {Electrodes, e.g. characterised by the structure} - H01S 5/04257: {having positive and negative electrodes on the same side of the substrate} - H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] - H10F 77/00: Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - H01S 5/02234: Resin-filled housings; the housings being made of resin - H01S 5/18313: {by oxidizing at least one of the DBR layers} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract An optical semiconductor element includes: a semiconductor substrate that is semi-insulating; a columnar body that is formed on a front surface-side of the semiconductor substrate and configured to emit or receive light from the front surface-side; a front surface-side electrode that is connected to the columnar body; a back surface-side electrode formed on a back surface-side of the semiconductor substrate; and an electrically conductive member that is formed to penetrate through the semiconductor substrate to connect the front surface-electrode and the back surface-side electrode, and has a protruding portion protruding on the front surface-side of the semiconductor substrate. ## Claims ### Claim 1 An optical semiconductor element comprising: a semiconductor substrate that is semi-insulating; a columnar body that is formed on a front surface-side of the semiconductor substrate and configured to emit or receive light from the front surface-side; a front surface-side electrode that is connected to the columnar body; a back surface-side electrode formed on a back surface-side of the semiconductor substrate; and an electrically conductive member that is formed to penetrate through the semiconductor substrate to connect the front surface-side electrode and the back surface-side electrode, and has a protruding portion protruding, with respect to the front surface-side electrode, on the front surface-side of the semiconductor substrate, wherein the electrically conductive member is arranged separately from the columnar body, wherein the protruding portion has a height exceeding an upper surface of the columnar body, and wherein a top surface of the protruding portion is positioned higher than the upper surface of the columnar body and is separated from the upper surface of the columnar body. ### Claim 2 (depends on 1) The optical semiconductor element according to claim 1, wherein the protruding portion has a height exceeding the front surface-side electrode. ### Claim 3 (depends on 1) The optical semiconductor element according to claim 1, wherein the electrically conductive member and the front surface-side electrode are connected to each other on a surface of the semiconductor substrate on which the columnar body is formed. ### Claim 4 (depends on 2) The optical semiconductor element according to claim 2, wherein the electrically conductive member and the front surface-side electrode are connected to each other on a surface of the semiconductor substrate on which the columnar body is formed. ### Claim 5 (depends on 1) The optical semiconductor element according to claim 1, further comprising a bump formed on the back surface-side electrode. ### Claim 6 (depends on 1) The optical semiconductor element according to claim 1, wherein the front surface-side electrode includes an electrode having a closed shape in planar view, and the protruding portion is connected to at least a part of the electrode having the closed shape in planar view. ### Claim 7 (depends on 1) An optical semiconductor device comprising: the optical semiconductor element according to claim 1; and an optical member that is optically coupled to the optical semiconductor element, wherein a positional relationship between the optical member and the columnar body is defined by the protruding portion. ### Claim 8 (depends on 7) The optical semiconductor device according to claim 7, wherein the optical semiconductor element is a light-emitting element, and wherein the optical member is a light diffusion member configured to diffuse light emitted from the optical semiconductor element toward an outside. ### Claim 9 (depends on 7) An optical transmission system comprising: the optical semiconductor device according to claim 7; and a light transmission path, as the optical member configured to transmit light emitted from the optical semiconductor element or light received at the optical semiconductor element.