Back to results
US 12,119,416 B2Granted
Buffer layers for photovoltaic devices with group V doping
AssigneeFirst Solar, Inc.
InventorsLe Chen, Sachit Grover, Jason Kephart, Sergei Kniajanski, Chungho Lee, Xiaoping Li, Feng Liao, Dingyuan Lu, Rajni Mallick, Wenming Wang, Gang Xiong, Wei Zhang
Life of this patent
Estimating the term…
Abstract
According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.
Claims24
A photovoltaic device comprising:
- a substrate;
- a transparent conductive oxide layer over the substrate;
- a buffer layer residing over the transparent conductive oxide layer, the buffer layer including:
- a first buffer layer comprising a discontinuous first layer including MnOx and a void formed through the discontinuous first layer occupied by a material other than MnOx;
- and
- a second buffer layer;
- an absorber layer over the buffer layer, the absorber layer including a group V dopant, and the absorber layer having a first and second surface;
- and
- a back contact layer over the absorber layer.
6 more elements
A photovoltaic device comprising:
- a substrate;
- a transparent conductive oxide over the substrate;
- a buffer layer including two layers with one of the two layers being a discontinuous layer including MnOx having a void formed through the discontinuous layer occupied by a material other than MnOx and the buffer layer residing over the transparent conductive oxide;
- an absorber layer, residing over the buffer layer, the absorber layer including a group V dopant, and the absorber layer having a first and second surface;
- a back contact layer over the absorber layer;
- and
- a conducting layer over the back contact layer.
4 more elements
A photovoltaic device comprising:
- a substrate;
- a transparent conductive oxide layer over the substrate;
- a buffer layer including two layers with one of the two layers being a discontinuous layer including MnOx having a void formed through the discontinuous layer occupied by a material other than MnOx and the buffer layer residing over the transparent conductive oxide;
- an absorber layer over the buffer layer, the absorber layer including a group V dopant, and the absorber layer having a first and second surface;
- a back contact layer over the absorber layer;
- a conducting layer over the back contact layer;
- and
- a back support over the conducting layer.
5 more elements
Dependencies are inferred from the claim text.