# US 12,119,413 B2 · Schottky diode with tunable blocking voltage

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- Number: US 12,119,413 B2
- Document ID: US12119413B2
- Status: Granted
- Kind: B2
- Application number: 17/819,957
- Filed: 2022-08-16
- Published: 2024-02-22
- Granted: 2024-10-15
- Earliest claimed: 2022-08-16
- Assignees: Allegro MicroSystems, LLC
- Applicants: Allegro MicroSystems, LLC
- Inventors: Yu-Chun Li; Felix Palumbo; Chung C. Kuo; Thomas S. Chung; Maxim Klebanov
- Web page: https://patentgrep.com/patent/US12119413B2

## CPC

- H10D 8/60: Schottky-barrier diodes
- H10D 8/051: {of Schottky diodes}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 62/129: {Cathode regions of diodes}
- H10D 64/111: {Field plates}
- H10D 64/112: {comprising multiple field plate segments}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A Schottky diode includes a substrate having a first type dopant, a buried layer within the substrate and having a second type dopant, an epitaxial layer above the buried layer and having the second type dopant, a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring, a shallow trench isolation (STI) layer at the top region of the epitaxial layer, an anode, a cathode spaced from the anode by the STI layer, and wherein the buried layer has an open region substantially vertically aligned with the anode.

## Claims

### Claim 1

A Schottky diode comprising:
a substrate having a first type dopant;
a buried layer within the substrate and having a second type dopant;
an epitaxial layer above the buried layer and having the second type dopant;
a plurality of rings within the epitaxial layer and having the first type dopant, wherein the plurality of rings comprises an L-shaped ring;
a shallow trench isolation (STI) layer at the top region of the epitaxial layer;
an anode;
a cathode spaced from the anode by the STI layer; and
wherein the buried layer has an open region substantially vertically aligned with the anode.

### Claim 2 (depends on 1)

The Schottky diode of claim 1, wherein the L-shaped ring covers a corner of the STI layer adjacent to the anode.

### Claim 3 (depends on 2)

The Schottky diode of claim 2, wherein a dimension of the L-shaped ring is adjustable and wherein a blocking voltage of the Schottky diode is based at least in part on the dimension of the L-shaped ring.

### Claim 4 (depends on 3)

The Schottky diode of claim 3, wherein the dimension of the L-shaped ring is a width of the L-shaped ring that extends under the STI layer.

### Claim 5 (depends on 1)

The Schottky diode of claim 1, wherein the open region of the buried layer has an adjustable width and wherein a blocking voltage of the Schottky diode is based at least in part on the width of the open region.

### Claim 6 (depends on 1)

The Schottky diode of claim 1, further comprising at least one field plate above the STI layer.

### Claim 7 (depends on 1)

The Schottky diode of claim 1, further comprising at least one plug in contact with the buried layer.

### Claim 8 (depends on 1)

The Schottky diode of claim 1, wherein the first type dopant is p-type and wherein the second type dopant is n-type.

### Claim 9 (depends on 1)

The Schottky diode of claim 1, wherein the substrate is comprised of silicon.

### Claim 10 (depends on 1)

The Schottky diode of claim 1, wherein the substrate and the epitaxial layer are comprised of a crystalline semiconductor material, selected from silicon, Ge, AlGaN, InGaAs, GaAs, InAs, InP, AlN, InN, GaN, SiC, SiGe.