# US 12,119,410 B2 · Display device and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,410 B2 - Document ID: US12119410B2 - Status: Granted - Kind: B2 - Application number: 16/599,296 - Filed: 2019-10-11 - Published: 2020-04-23 - Granted: 2024-10-15 - Earliest claimed: 2018-10-19 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Hiromasa Tsuboi - Web page: https://patentgrep.com/patent/US12119410B2 ## CPC - G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element - H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)} - H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer} - H10D 86/60: wherein the TFTs are in active matrices - H10K 59/1213: {the pixel elements being TFTs} - G09G 2300/0426: Layout of electrodes and connections - G09G 2300/0819: used for counteracting undesired variations, e.g. feedback or autozeroing - G09G 2300/0852: being a dynamic memory with more than one capacitor - G09G 2300/0861: with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes - G09G 2320/0238: Improving the black level - H10B 20/30: {having the source region and the drain region on the same level, e.g. lateral transistors} - H10K 59/12: Active-matrix OLED [AMOLED] displays - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A display device in which a plurality of pixels are arranged in an array is provided. Each of the plurality of pixels comprises a current path that includes a light emitting element and a first transistor, and a second transistor for transmitting a luminance signal. The first transistor comprises diffusion regions arranged in the current path, and a gate electrode to which the luminance signal is transmitted from the second transistor. The diffusion regions are of a first conductivity type, and the gate electrode is of a second conductivity type opposite to the first conductivity type. ## Claims ### Claim 1 A display device comprising: a silicon substrate; and a plurality of pixels arranged in an array, wherein each of the plurality of pixels comprises: a current path that includes a light emitting element and a first transistor; a second transistor for transmitting a luminance signal; and a reset transistor for shorting between terminals of the light emitting element, wherein the first transistor comprises (1) diffusion regions arranged in the current path, (2) a channel region arranged between the diffusion regions, and (3) a gate electrode to which the luminance signal is transmitted from the second transistor, wherein the diffusion regions of the first transistor are of a first conductivity type, wherein the gate electrode of the first transistor is of a second conductivity type opposite to the first conductivity type, wherein the diffusion regions of the first transistor are provided in a well of the silicon substrate, the well having the second conductivity type, wherein diffusion regions of the reset transistor are of the first conductivity type, wherein a gate electrode of the reset transistor is of the first conductivity type, wherein the reset transistor is connected to an anode of the light emitting element, wherein the reset transistor is switchable between a conductive state and a non-conductive state, and wherein, by the reset transistor entering the conductive state, the terminals of the light emitting element are shorted and the light emitting element is in a non-light-emitting state. ### Claim 2 (depends on 1) The display device according to claim 1, wherein an impurity concentration of a channel region of the first transistor is lower than an impurity concentration of a channel region of the second transistor. ### Claim 3 (depends on 1) The display device according to claim 1, wherein a channel region of the first transistor is of the first conductivity type. ### Claim 4 (depends on 3) The display device according to claim 3, wherein an impurity of the diffusion regions is higher than an impurity of the channel region of the first transistor. ### Claim 5 (depends on 1) The display device according to claim 1, wherein the first transistor and the second transistor are arranged in the well, and wherein an impurity concentration of a channel region of the first transistor is lower than an impurity concentration of the well. ### Claim 6 (depends on 5) The display device according to claim 5, wherein each of the plurality of pixels further comprises a fourth transistor that is arranged in the current path, the fourth transistor being configured for controlling a conductive state of the current path, wherein diffusion regions of the fourth transistor are of the first conductivity type, wherein a gate electrode of the fourth transistor is of the second conductivity type, and wherein the impurity concentration of the channel region of the fourth transistor is lower than the impurity concentration of the well. ### Claim 7 (depends on 1) The display device according to claim 1, wherein each of the plurality of pixels further comprises a fourth transistor that is arranged in the current path, the fourth transistor being configured for controlling a conductive state of the current path. ### Claim 8 (depends on 7) The display device according to claim 7, wherein diffusion regions of the fourth transistor are of the first conductivity type, and wherein a gate electrode of the fourth transistor is of the second conductivity type. ### Claim 9 (depends on 7) The display device according to claim 7, wherein an impurity concentration of a channel region of the fourth transistor is lower than an impurity concentration of a channel region of the second transistor. ### Claim 10 (depends on 7) The display device according to claim 7, wherein a channel region of the fourth transistor is of the first conductivity type. ### Claim 11 (depends on 7) The display device according to claim 7, wherein an impurity concentration of the gate electrode of the first transistor and an impurity concentration of a gate electrode of the fourth transistor are different from each other. ### Claim 12 (depends on 7) The display device according to claim 7, wherein the first transistor is arranged between the light emitting element and the fourth transistor. ### Claim 13 (depends on 7) The display device according to claim 7, wherein an impurity concentration of a channel region of the fourth transistor is lower than an impurity concentration of a channel region of the reset transistor. ### Claim 14 (depends on 1) The display device according to claim 1, wherein an impurity concentration of a channel region of the first transistor is lower than an impurity concentration of a channel region of the reset transistor. ### Claim 15 (depends on 1) The display device according to claim 1, wherein a channel region of the reset transistor is of the first conductivity type. ### Claim 16 (depends on 1) The display device according to claim 1, wherein diffusion regions and a gate electrode of the second transistor are of the first conductivity type, and wherein a channel region of the second transistor is of the second conductivity type. ### Claim 17 (depends on 1) An electronic device comprising: the display device according to claim 1; and a control unit configured to control driving of the display device. ### Claim 18 (depends on 1) The display device according to claim 1, wherein the gate electrode of the first transistor is a semiconductor of a same conductivity type as the substrate. ### Claim 19 (depends on 1) The display device according to claim 1, wherein the substrate is composed of a semiconductor. ### Claim 20 (depends on 19) The display device according to claim 19, wherein an insulation layer is arranged between the channel region and the gate electrode, and wherein the insulation layer is composed of an oxide of the semiconductor.