# US 12,119,399 B2 · Semiconductor device including vertical MOSFET and Schottky barrier diode

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- Number: US 12,119,399 B2
- Document ID: US12119399B2
- Status: Granted
- Kind: B2
- Application number: 17/558,004
- Filed: 2021-12-21
- Published: 2022-06-23
- Granted: 2024-10-15
- Earliest claimed: 2020-12-22
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Masakazu Baba; Shinsuke Harada
- Web page: https://patentgrep.com/patent/US12119399B2

## CPC

- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 84/146: {the built-in components being Schottky barrier diodes}
- H10D 30/665: {having edge termination structures}
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/8325: {Silicon carbide}
- H10D 8/60: Schottky-barrier diodes
- H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device capable of suppressing forward voltage degradation and loss during turn-on. A vertical MOSFET includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, third semiconductor regions of the second conductivity type, first trenches and second trenches, gate electrodes provided in the first trenches via a gate insulating film, and Schottky metal provided in the second trenches. In a region between an active region through which current flows during an on-state and an edge region that surrounds a periphery of the active region and sustains a breakdown voltage, sidewalls of the second trenches are apart from the second semiconductor regions and the third semiconductor regions.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor substrate of a first conductivity type;
a first semiconductor layer of the first conductivity type provided on a front surface of the semiconductor substrate, wherein the first semiconductor layer has an impurity concentration that is lower than an impurity concentration of the semiconductor substrate;
a second semiconductor layer of a second conductivity type provided on a side of the first semiconductor layer, that is opposite to a side of the first semiconductor layer, that faces the semiconductor substrate;
a first semiconductor region of the first conductivity type selectively provided in the second semiconductor layer, wherein the first semiconductor region has an impurity concentration that is higher than the impurity concentration of the first semiconductor layer;
a plurality of second semiconductor regions of the second conductivity type provided in the first semiconductor layer;
a plurality of third semiconductor regions of the second conductivity type provided from a surface of the first semiconductor layer and having bottoms in contact with the plurality of second semiconductor regions;
a first trench and a second trench that penetrate the first semiconductor region and the second semiconductor layer and reach the first semiconductor layer, respective bottoms of the first trench and the second trench being in contact with the plurality of second semiconductor regions, respectively;
a gate electrode provided in the first trench via a gate insulating film; and
a Schottky electrode provided in the second trench, wherein
the second trench has sidewalls that are apart from the plurality of second semiconductor regions and the plurality of third semiconductor regions, in a region between an active region through which a current flows during an on-state and an edge region that surrounds a periphery of the active region and sustains a breakdown voltage.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a fourth semiconductor region of the second conductivity type provided in the edge region; and
a junction termination extension structure for enhancing the breakdown voltage provided in the edge region, wherein
a distance between the fourth semiconductor region and the plurality of second semiconductor regions is at least equal to a distance between adjacent two among the plurality of second semiconductor regions in the active region and less than a distance from the plurality of second semiconductor regions to the junction termination extension structure.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising a fifth semiconductor region of the second conductivity type selectively provided in the second semiconductor layer, the fifth semiconductor region being in contact with the first semiconductor region and having an impurity concentration that is higher than an impurity concentration of the second semiconductor layer, wherein
in the region, the fifth semiconductor region is provided closer to the active region than are side surfaces of the second trench, that face the edge region.