# US 12,119,395 B2 · Insulated gate bipolar transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,395 B2 - Document ID: US12119395B2 - Status: Granted - Kind: B2 - Application number: 17/762,212 - Filed: 2020-08-26 - Published: 2022-11-24 - Granted: 2024-10-15 - Earliest claimed: 2019-11-04 - Assignees: Southeast University; Csmc Technologies Fab2 Co., Ltd. - Applicants: Southeast University; Csmc Technologies Fab2 Co., Ltd. - Inventors: Long Zhang; Jie Ma; Yan Gu; Sen Zhang; Jing Zhu; Jinli Gong; Weifeng Sun; Longxing Shi - Web page: https://patentgrep.com/patent/US12119395B2 ## CPC - H10D 12/421: {on insulating layers or insulating substrates, e.g. thin-film IGBTs} - H10D 62/107: {Buried supplementary regions, e.g. buried guard rings (multi-RESURF H10D62/111)} - H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D 64/112: {comprising multiple field plate segments} - H10D 64/232: {Emitter electrodes for IGBTs} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region. ## Claims ### Claim 1 An insulated gate bipolar transistor, comprising: a drift region of a first conductivity type; a body region of a second conductivity type disposed on the drift region; a cathode first conductivity-type region disposed within the body region; a cathode second conductivity-type region disposed within the body region; an anode first conductivity-type region disposed on the drift region, and comprising a first region and a second region; and an anode second conductivity-type region disposed on the drift region, and comprising a third region and a fourth region; wherein a dopant concentration of the first region is less than a dopant concentration of the second region; a dopant concentration of the third region is less than a dopant concentration of the fourth region; the third region is disposed between the fourth region and the body region; the first region is disposed below the fourth region; the second region is disposed below the third region and between the first region and the body region; the first conductivity type is opposite to the second conductivity type, wherein the first conductivity type is an N type, and the second conductivity type is a P type; and further comprising a buffer layer of the first conductivity type; and the anode first conductivity-type region and the anode second conductivity-type region are disposed within the buffer layer. ### Claim 2 (depends on 1) The insulated gate bipolar transistor according to claim 1, further comprising a substrate of the second conductivity type and a buried oxygen layer disposed on the substrate; and the drift region is disposed on the buried oxygen layer. ### Claim 3 (depends on 1) The insulated gate bipolar transistor according to claim 1, further comprising a field oxygen layer disposed between the body region and the anode second conductivity-type region. ### Claim 4 (depends on 1) The insulated gate bipolar transistor according to claim 1, wherein a distance between the third region and the body region is less than a distance between the fourth region and the body region. ### Claim 5 (depends on 1) The insulated gate bipolar transistor according to claim 1, wherein a distance between the second region and the body region is less than a distance between the first region and the body region. ### Claim 6 (depends on 1) The insulated gate bipolar transistor according to claim 1, wherein a dopant concentration of the body region is lower than a dopant concentration of the cathode second conductivity-type region by an order of magnitude. ### Claim 7 (depends on 1) The insulated gate bipolar transistor according to claim 1, wherein a dopant concentration of the buffer layer is lower than the dopant concentration of the second region by an order of magnitude. ### Claim 8 (depends on 7) The insulated gate bipolar transistor according to claim 7, wherein the dopant concentration of the buffer layer is higher than the dopant concentration of the first region by an order of magnitude. ### Claim 9 (depends on 1) The insulated gate bipolar transistor according to claim 1, wherein the insulated gate bipolar transistor is equivalent to a transistor having a first triode and a second triode; a collector of the first triode comprises the body region, a base of the first triode comprises the drift region, the buffer layer, and the first region, and an emitter of the first triode comprises the fourth region; and a collector of the second triode comprises the body region, a base of the second triode comprises the drift region, the buffer layer, and the second region, and an emitter of the second triode comprises the third region. ### Claim 10 (depends on 1) The insulated gate bipolar transistor according to claim 1, wherein the first region is an N− type region, the second region is a N+ type region, the third region is a P− type region, the fourth region is a P+ type region, the body region is a P type body region, the cathode first conductivity-type region is an N+ type region, and the cathode second conductivity-type region is a P+ type region. ### Claim 11 (depends on 3) The insulated gate bipolar transistor according to claim 3, wherein a side of the field oxygen layer extends to an edge of the third region and an edge of the second region. ### Claim 12 (depends on 3) The insulated gate bipolar transistor according to claim 3, further comprising a first polysilicon and a second polysilicon; the first polysilicon extends from the field oxygen layer to the cathode first conductivity-type region; and the second polysilicon is disposed on the field oxygen layer. ### Claim 13 (depends on 12) The insulated gate bipolar transistor according to claim 12, further comprising a dielectric layer disposed at a region between the field oxygen layer and the cathode first conductivity-type region and disposed on the drift region and the body region; and the first polysilicon is disposed on the dielectric layer. ### Claim 14 (depends on 7) The insulated gate bipolar transistor according to claim 7, wherein the insulated gate bipolar transistor is equivalent to a transistor having a first triode and a second triode; a collector of the first triode comprises the body region, a base of the first triode comprises the drift region, the buffer layer, and the first region, and an emitter of the first triode comprises the fourth region; and a collector of the second triode comprises the body region, a base of the second triode comprises the drift region, the buffer layer, and the second region, and an emitter of the second triode comprises the third region. ### Claim 15 (depends on 1) The insulated gate bipolar transistor according to claim 1, further comprising an insulating layer disposed on a surface of the insulated gate bipolar transistor and provided with a first electrode and a second electrode thereon. ### Claim 16 (depends on 12) The insulated gate bipolar transistor according to claim 12, further comprising a first electrode and a second electrode; wherein the first electrode is electrically connected and leads to the cathode first conductivity-type region and the cathode second conductivity-type region through a first contact hole which is filled with a conductive material; and the second electrode is electrically connected and leads to the second polysilicon through a second contact hole, and is electrically connected and leads to the third region and the fourth region through a third contact hole. ### Claim 17 (depends on 3) The insulated gate bipolar transistor according to claim 3, wherein a first triode is a first PNP triode; and a second triode is a second PNP triode. ### Claim 18 An insulated gate bipolar transistor, comprising: a drift region of a first conductivity type; a body region of a second conductivity type disposed on the drift region; a cathode first conductivity-type region disposed within the body region; a cathode second conductivity-type region disposed within the body region; an anode first conductivity-type region disposed on the drift region, and comprising a first region and a second region; and an anode second conductivity-type region disposed on the drift region, and comprising a third region and a fourth region; wherein a dopant concentration of the first region is less than a dopant concentration of the second region; a dopant concentration of the third region is less than a dopant concentration of the fourth region; the third region is disposed between the fourth region and the body region; the first region is disposed below the fourth region; the second region is disposed below the third region and between the first region and the body region; and the first conductivity type is opposite to the second conductivity type; further comprising a field oxygen layer disposed between the body region and the anode second conductivity-type region, wherein a side of the field oxygen layer extends to an edge of the third region and an edge of the second region, and wherein the field oxygen layer covers a portion of a buffer layer.