# US 12,119,385 B2 · Field effect transistor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,385 B2 - Document ID: US12119385B2 - Status: Granted - Kind: B2 - Application number: 17/666,860 - Filed: 2022-02-08 - Published: 2022-12-01 - Granted: 2024-10-15 - Earliest claimed: 2021-05-27 - Assignees: Kabushiki Kaisha Toshiba - Applicants: Kabushiki Kaisha Toshiba - Inventors: Hiro Gangi; Yasunori Taguchi; Tomoaki Inokuchi; Yusuke Kobayashi; Hiroki Nemoto - Web page: https://patentgrep.com/patent/US12119385B2 ## CPC - H10D 64/112: {comprising multiple field plate segments} - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/20: Electrodes characterised by their shapes, relative sizes or dispositions - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 64/516: {the thicknesses being non-uniform} - H10D 64/518: {characterised by their lengths or sectional shapes} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device includes a first electrode, a second electrode, a semiconductor layer that includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, a third electrode, a first insulating region, a second insulating region, a fourth electrode that has a plurality of portions consecutive in a first direction, the plurality of portions including a first portion that has a first width in a second direction, a second portion that is located closer to the second electrode than the first portion in the first direction and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction, and a third insulating region. ## Claims ### Claim 1 A semiconductor device, comprising: a first electrode; a second electrode; a semiconductor layer that includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type, the first semiconductor region of the first conductivity type being located between the first electrode and the second electrode in a first direction from the second electrode toward the first electrode and electrically connected to the second electrode, the second semiconductor region of a second conductivity type being located between the first electrode and the first semiconductor region in the first direction and being in contact with the first semiconductor region, and the third semiconductor region of the first conductivity type being located between the first electrode and the second semiconductor region in the first direction and being in contact with the second semiconductor region; a third electrode that is located between the first electrode and the first semiconductor region in the first direction and faces the second semiconductor region in a second direction intersecting the first direction; a first insulating region that is located between the third electrode and the first semiconductor region, the second semiconductor region, and the third semiconductor region; a second insulating region that is located between the third electrode and the first electrode; a fourth electrode that is located between the third electrode and the first semiconductor region in the first direction and that has a plurality of portions consecutive in the first direction, the plurality of portions including a first portion that has a first width in the second direction, a second portion that is adjacent to the first portion, located closer to the second electrode than the first portion in the first direction, and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction; and a third insulating region that is located between the fourth electrode and the first semiconductor region, wherein the plurality of portions of the fourth electrode include a fourth portion that is adjacent to the first portion, located closer to the first electrode than the first portion in the first direction, and has a fourth width larger than the first width in the second direction. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the fourth electrode is electrically connected to the third electrode. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, further comprising: a fourth insulating region that is located between the fourth electrode and the third electrode, wherein the fourth electrode is electrically connected to the first electrode. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the plurality of portions of the fourth electrode include a fifth portion that is adjacent to the fourth portion, located closer to the first electrode than the fourth portion in the first direction, and has a fifth width larger than the fourth width in the second direction. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the plurality of portions of the fourth electrode further include a sixth portion that is adjacent to the third portion, located closer to the second electrode than the third portion in the first direction, and has a sixth width smaller than the third width in the second direction. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein the plurality of portions of the fourth electrode further include a seventh portion that is adjacent to the sixth portion, located closer to the second electrode than the sixth portion in the first direction, and has a seventh width smaller than the sixth width in the second direction. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the plurality of portions other than the second portion have a width increasing in the second direction as the width in the second direction increases from the second electrode toward the first electrode in the first direction. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the plurality of portions includes two or more portions having a smaller width in the second direction than both adjacent portions in the first direction. ### Claim 9 (depends on 1) The semiconductor device according to claim 1, wherein the first electrode is located on the third semiconductor region and electrically connected to the third semiconductor region; and the second electrode is located under the first semiconductor region and electrically connected to the first semiconductor region. ### Claim 10 A semiconductor device, comprising: a first electrode; a second electrode; a semiconductor layer that includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type, the first semiconductor region of the first conductivity type being located between the first electrode and the second electrode in a first direction from the second electrode toward the first electrode and electrically connected to the second electrode, the second semiconductor region of a second conductivity type being located between the first electrode and the first semiconductor region in the first direction and being in contact with the first semiconductor region, and the third semiconductor region of the first conductivity type being located between the first electrode and the second semiconductor region in the first direction and being in contact with the second semiconductor region; a third electrode that is located between the first electrode and the first semiconductor region in the first direction and faces the second semiconductor region in a second direction intersecting the first direction; a first insulating region that is located between the third electrode and the first semiconductor region, the second semiconductor region, and the third semiconductor region; a second insulating region that is located between the third electrode and the first electrode; a fourth electrode that is located between the third electrode and the first semiconductor region in the first direction and that has a plurality of portions consecutive in the first direction, the plurality of portions including a first portion that has a first width in the second direction, a second portion that is adjacent to the first portion, located closer to the second electrode than the first portion in the first direction, and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction; and a third insulating region that is located between the fourth electrode and the first semiconductor region, wherein the first width is larger than the third width. ### Claim 11 A semiconductor device, comprising: a first electrode; a second electrode; a semiconductor layer that includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type, the first semiconductor region of the first conductivity type being located between the first electrode and the second electrode in a first direction from the second electrode toward the first electrode and electrically connected to the second electrode, the second semiconductor region of a second conductivity type being located between the first electrode and the first semiconductor region in the first direction and being in contact with the first semiconductor region, and the third semiconductor region of the first conductivity type being located between the first electrode and the second semiconductor region in the first direction and being in contact with the second semiconductor region; a third electrode that is located between the first electrode and the first semiconductor region in the first direction and faces the second semiconductor region in a second direction intersecting the first direction; a first insulating region that is located between the third electrode and the first semiconductor region, the second semiconductor region, and the third semiconductor region; a second insulating region that is located between the third electrode and the first electrode; a fourth electrode that is located between the third electrode and the first semiconductor region in the first direction and that has a plurality of portions consecutive in the first direction, the plurality of portions including a first portion that has a first width in the second direction, a second portion that is adjacent to the first portion, located closer to the second electrode than the first portion in the first direction, and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction; and a third insulating region that is located between the fourth electrode and the first semiconductor region, wherein a portion located closest to the first electrode in the first direction among the plurality of portions has a length L1 in the first direction and a width W1 in the second direction, a portion adjacent to the portion located closest to the first electrode among the plurality of portions has a length L2 in the first direction and a width W2 in the second direction, and a relationship of (W1/L1)/(W2/L2)>2.5 is satisfied.