# US 12,119,383 B2 · Transistor with multi-level self-aligned gate and source/drain terminals and methods

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- Number: US 12,119,383 B2
- Document ID: US12119383B2
- Status: Granted
- Kind: B2
- Application number: 18/174,052
- Filed: 2023-02-24
- Published: 2023-06-29
- Granted: 2024-10-15
- Earliest claimed: 2021-01-12
- Assignees: GlobalFoundries U.S. Inc.
- Applicants: GlobalFoundries U.S. Inc.
- Inventors: Johnatan A. Kantarovsky; Mark D. Levy; Jeonghyun Hwang; Siva P. Adusumilli; Ajay Raman
- Web page: https://patentgrep.com/patent/US12119383B2

## CPC

- H10D 64/01: Manufacture or treatment
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/475: {having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 64/411: {for FETs}
- H10D 64/518: {characterised by their lengths or sectional shapes}
- H10W 20/069: {by forming self-aligned vias or self-aligned contact plugs}
- H10D 30/6738: {Schottky barrier electrodes}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 62/85: being Group III-V materials, e.g. GaAs
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10D 64/66: Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D 64/671: {the conductor having lateral variation in doping or structure}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed are a transistor and a method for forming the transistor. The method includes concurrently forming gate and source/drain openings through an uppermost layer (i.e., a dielectric layer) in a stack of layers. The method can further include: depositing and patterning gate conductor material so that a first gate section is in the gate opening and a second gate section is above the gate opening and so that the source/drain openings are exposed; extending the depth of the source/drain openings; and depositing and patterning source/drain conductor material so that a first source/drain section is in each source/drain opening and a second source/drain section is above each source/drain opening. Alternatively, the method can include: forming a plug in the gate opening and sidewall spacers in the source/drain openings; extending the depth of source/drain openings; depositing and patterning the source/drain conductor material; and subsequently depositing and patterning the gate conductor material.

## Claims

### Claim 1

A structure comprising:
a stack of layers comprising: a channel layer; a barrier layer on the channel layer; and a dielectric layer on the barrier layer;
source/drain terminals; and
a gate terminal positioned laterally between the source/drain terminals,
wherein each source/drain terminal comprises: a first source/drain section within a source/drain opening that extends through the dielectric layer and the barrier layer to the channel layer; and a second source/drain section above the first source/drain section,
wherein each source/drain opening has a lower portion within the barrier layer and an upper portion within the dielectric layer and wider than the lower portion,
wherein the gate terminal comprises: a first gate section within a gate opening that extends through the dielectric layer and has a bottom above the barrier layer; and a second gate section above the first gate section and the dielectric layer, and
wherein the first source/drain section and the second source/drain section comprise a source/drain conductor material and the first gate section and the second gate section comprise a gate conductor material that is different from the source/drain conductor material,
wherein the stack of layers further includes a gate dielectric layer between the barrier layer and the dielectric layer,
wherein each source/drain opening further has a center portion within the gate dielectric layer between the lower portion and the upper portion, and
wherein the center portion and the lower portion have approximately equal widths.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the first source/drain section has a first width in the lower portion of the source/drain opening and a second width that is wider than the first width in the upper portion of the source/drain opening.

### Claim 3 (depends on 1)

The structure of claim 1, further comprising sidewall spacers within the source/drain opening above the barrier layer and positioned laterally adjacent to essentially vertical surfaces of the dielectric layer, wherein the first source/drain section has an essentially uniform width within the lower portion and the upper portion of the source/drain opening.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the first source/drain section has a first width within the lower portion and the center portion of the source/drain opening and a second width that is wider than the first width in the upper portion of the source/drain opening.

### Claim 5 (depends on 1)

The structure of claim 1, further comprising sidewall spacers within the source/drain opening above the gate dielectric layer and positioned laterally adjacent to essentially vertical surfaces of the dielectric layer, wherein the first source/drain section has an essentially uniform width in the lower portion, the center portion, and the upper portion of the source/drain opening.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the second source/drain section is wider than the first source/drain section and extends laterally onto the dielectric layer.

### Claim 7 (depends on 1)

The structure of claim 1,
wherein the gate opening extends through the dielectric layer to the gate dielectric layer, and
wherein the first gate section is immediately adjacent to the gate dielectric layer at a bottom of the gate opening.

### Claim 8

A structure comprising:
a stack of layers comprising: a channel layer; a barrier layer on the channel layer; and a dielectric layer on the barrier layer;
source/drain terminals;
a gate terminal positioned laterally between the source/drain terminals,
wherein each source/drain terminal comprises: a first source/drain section within a source/drain opening; and a second source/drain section above the first source/drain section,
wherein the source/drain opening extends through the dielectric layer and the barrier layer to the channel layer and includes:
a lower portion within the barrier layer; and
an upper portion within the dielectric layer and wider than the lower portion,
wherein sidewalls of the upper portion are offset from sidewalls of the lower portion,
wherein the gate terminal comprises: a first gate section within a gate opening that extends through the dielectric layer and has a bottom above the barrier layer; and a second gate section above the first gate section and the dielectric layer, and
wherein the first source/drain section and the second source/drain section comprise a source/drain conductor material and the first gate section and the second gate section comprise a gate conductor material that is different from the source/drain conductor material; and
sidewall spacers within the source/drain opening above the barrier layer and positioned laterally adjacent to essentially vertical surfaces of the dielectric layer, wherein the first source/drain section has an essentially uniform width within the lower portion and the upper portion of the source/drain opening.

### Claim 9 (depends on 8)

The structure of claim 8, wherein the first source/drain section has a first width in the lower portion of the source/drain opening and a second width that is wider than the first width in the upper portion of the source/drain opening.

### Claim 10 (depends on 8)

The structure of claim 8, wherein the second source/drain section is wider than the first source/drain section and extends laterally onto the dielectric layer.

### Claim 11 (depends on 8)

The structure of claim 8, wherein the first gate section is any of the following:
immediately adjacent to the barrier layer at a bottom of the gate opening; and
immediately adjacent to a gate dielectric material lining the gate opening.

### Claim 12

A structure comprising:
a stack of layers comprising: a channel layer; a barrier layer on the channel layer; a gate dielectric layer on the barrier layer; and a dielectric layer on the gate dielectric layer;
source/drain terminals; and
a gate terminal positioned laterally between the source/drain terminals,
wherein each source/drain terminal comprises: a first source/drain section within a source/drain opening; and a second source/drain section above the first source/drain section,
wherein the source/drain opening extends through the dielectric layer, the gate dielectric layer, and the barrier layer to the channel layer and includes:
a lower portion within the barrier layer;
a center portion within the gate dielectric layer; and
an upper portion within the dielectric layer and wider than the lower portion and the center portion,
wherein sidewalls of the upper portion are offset from vertically aligned sidewalls of the lower portion and the center portion,
wherein the gate terminal comprises: a first gate section within a gate opening that extends through the dielectric layer and has a bottom above the barrier layer; and a second gate section above the first gate section and the dielectric layer, and
wherein the first source/drain section and the second source/drain section comprise a source/drain conductor material and the first gate section and the second gate section comprise a gate conductor material that is different from the source/drain conductor material.

### Claim 13 (depends on 12)

The structure of claim 12, wherein the first source/drain section has a first width in the lower portion and the center portion of the source/drain opening and a second width that is wider than the first width in the upper portion of the source/drain opening.

### Claim 14 (depends on 12)

The structure of claim 12, further comprising sidewall spacers within the source/drain opening above the gate dielectric layer and positioned laterally adjacent to essentially vertical surfaces of the dielectric layer, wherein the first source/drain section has an essentially uniform width in the lower portion, the center portion, and the upper portion of the source/drain opening.

### Claim 15 (depends on 12)

The structure of claim 12, wherein the second source/drain section is wider than the first source/drain section and extends laterally onto the dielectric layer.