# US 12,119,374 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,374 B2 - Document ID: US12119374B2 - Status: Granted - Kind: B2 - Application number: 17/857,383 - Filed: 2022-07-05 - Published: 2022-10-20 - Granted: 2024-10-15 - Earliest claimed: 2020-07-29 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Gihee Cho; Sangyeol Kang; Jungoo Kang; Taekyun Kim; Jiwoon Park; Sanghyuck Ahn; Jin-Su Lee; Hyun-Suk Lee; Hongsik Chae - Web page: https://patentgrep.com/patent/US12119374B2 ## CPC - H10D 1/043: {using patterning processes to form electrode extensions, e.g. etching} - H10B 12/033: {the capacitor extending over the transistor} - H10B 12/0335: {Making a connection between the transistor and the capacitor, e.g. plug} - H10B 12/053: {the transistor being at least partially in a trench in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383)} - H10B 12/315: {with the capacitor higher than a bit line} - H10B 12/34: {the transistor being at least partially in a trench in the substrate} - H10B 12/482: {Bit lines} - H10B 12/488: {Word lines} - H10D 1/716: {having vertical extensions} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A semiconductor device and a method of manufacturing the same, the device including a plurality of lower electrodes on a semiconductor substrate; a support pattern connecting the lower electrodes at sides of the lower electrodes; and a dielectric layer covering the lower electrodes and the support pattern, wherein each of the plurality of lower electrodes includes a pillar portion extending in a vertical direction perpendicular to a top surface of the semiconductor substrate; and a protrusion protruding from a sidewall of the pillar portion so as to be in contact with the support pattern, the pillar portion includes a conductive material, the protrusion includes a same conductive material as the pillar portion and is further doped with impurities. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate; a first insulating layer on the substrate; a contact structure in the first insulating layer; a second insulating layer on the first insulating layer; a lower electrode on the second insulating layer, passing through the second insulating layer, and electrically connected to the contact structure, the lower electrode including a first connection portion and a second connection portion that is on the first connection portion and that is spaced apart from the first connection portion in a vertical direction that is perpendicular to a top surface of the substrate; a first support pattern on the second insulating layer and connected to the first connection portion of the lower electrode; a second support pattern on the first support pattern and connected to the second connection portion of the lower electrode; a dielectric layer on the lower electrode; and an upper electrode on the dielectric layer, wherein: a top surface of the first connection portion of the lower electrode and a bottom surface of the first connection portion of the lower electrode contact the dielectric layer, and a top surface of the second connection portion of the lower electrode and a bottom surface of the second connection portion of the lower electrode contact the dielectric layer. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the lower electrode includes titanium nitride (TiN), titanium-silicon nitride (TiSiN), titanium-aluminum nitride (TiAlN), tantalum nitride (TaN), or doped poly-silicon. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the first connection portion of the lower electrode or the second connection portion of the lower electrode includes titanium nitride (TiN), titanium-silicon nitride (TiSiN), titanium-aluminum nitride (TiAlN), tantalum nitride (TaN), or doped poly-silicon. ### Claim 4 (depends on 3) The semiconductor device of claim 3, wherein the first connection portion of the lower electrode or the second connection portion of the lower electrode further includes carbon (C) or boron (B). ### Claim 5 (depends on 1) The semiconductor device of claim 1, wherein: the first connection portion of the lower electrode surrounds a first side surface of the lower electrode, and the second connection portion of the lower electrode surrounds a second side surface of the lower electrode. ### Claim 6 (depends on 5) The semiconductor device of claim 5, wherein: the lower electrode includes a third side surface between the first side surface of the lower electrode and the second side surface of the lower electrode, and the dielectric layer contacts the third side surface of the lower electrode. ### Claim 7 (depends on 1) The semiconductor device of claim 1, wherein: the lower electrode includes a third connection portion between the lower electrode and the second insulating layer, and the dielectric layer contacts a top surface of the third connection portion of the lower electrode. ### Claim 8 (depends on 7) The semiconductor device of claim 7, wherein: the lower electrode includes a fourth side surface between the second insulating layer and the first support pattern, and the dielectric layer contacts the fourth side surface of the lower electrode. ### Claim 9 (depends on 1) The semiconductor device of claim 1, wherein: a thickness of the first support pattern in the vertical direction is less than a thickness of the second support pattern in the vertical direction, and a thickness of the first connection portion of the lower electrode in the vertical direction is less than a thickness of the second connection portion of the lower electrode in the vertical direction. ### Claim 10 (depends on 1) The semiconductor device of claim 1, wherein a thickness of the first connection portion of the lower electrode in the vertical direction is equal to or is greater than a thickness of the first support pattern in the vertical direction. ### Claim 11 (depends on 1) The semiconductor device of claim 1, wherein a thickness of the second connection portion of the lower electrode in the vertical direction is less than a thickness of the second support pattern in the vertical direction. ### Claim 12 (depends on 1) The semiconductor device of claim 1, wherein the second support pattern protrudes beyond a top surface of the lower electrode. ### Claim 13 (depends on 1) The semiconductor device of claim 1, wherein the second support pattern protrudes beyond the top surface of the second connection portion of the lower electrode. ### Claim 14 (depends on 1) The semiconductor device of claim 1, wherein the bottom surface of the second connection portion of the lower electrode is substantially coplanar with a bottom surface of the second support pattern. ### Claim 15 (depends on 1) The semiconductor device of claim 1, wherein the dielectric layer contacts a side surface of the second support pattern. ### Claim 16 A semiconductor device, comprising: substrate; an insulating layer on the substrate; a lower electrode on the insulating layer, the lower electrode including a first connection portion, a second connection portion that is on the first connection portion and that is spaced apart from the first connection portion, and a side surface between the first connection portion and the second connection portion; a first support pattern connected to the first connection portion of the lower electrode; a second support pattern connected to the second connection portion of the lower electrode; a dielectric layer on the lower electrode; and an upper electrode on the dielectric layer, wherein: a thickness of the first support pattern in a vertical direction that is perpendicular to a top surface of the substrate is less than a thickness of the second support pattern in the vertical direction, a thickness of the first connection portion of the lower electrode in the vertical direction is less than a thickness of the second connection portion of the lower electrode in the vertical direction, and the dielectric layer contacts a top surface of the first connection portion of the lower electrode, a bottom surface of the second connection portion of the lower electrode, and the side surface of the lower electrode. ### Claim 17 (depends on 16) The semiconductor device of claim 16, wherein the dielectric layer contacts a bottom surface of the first connection portion of the lower electrode and a top surface of the second connection portion of the lower electrode. ### Claim 18 (depends on 16) The semiconductor device of claim 16, wherein the dielectric layer contacts a side surface of the second support pattern and/or a top surface of the lower electrode. ### Claim 19 (depends on 16) The semiconductor device of claim 16, wherein the first connection portion of the lower electrode or the second connection portion of the lower electrode includes titanium nitride (TiN), titanium-silicon nitride (TiSiN), titanium-aluminum nitride (TiAlN), tantalum nitride (TaN), or doped poly-silicon. ### Claim 20 (depends on 19) The semiconductor device of claim 19, wherein the first connection portion of the lower electrode or the second connection portion of the lower electrode includes carbon (C) or boron (B).