# US 12,119,356 B2 · Driver board, display panel > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,356 B2 - Document ID: US12119356B2 - Status: Granted - Kind: B2 - Application number: 17/620,807 - Filed: 2021-12-08 - Published: 2024-01-25 - Granted: 2024-10-15 - Earliest claimed: 2021-11-24 - Assignees: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. - Applicants: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. - Inventors: Chuanbao Luo - Web page: https://patentgrep.com/patent/US12119356B2 ## CPC - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 86/60: wherein the TFTs are in active matrices - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics} - H10K 59/8731: {multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers} - H10D 30/6723: {having light shields} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract The application provides a driver board and a display panel; the driver board comprises a substrate, a metal oxide semiconductor active layer, a gate layer, and a first protective layer; the gate layer is arranged on the side of the metal oxide semiconductor active layer away from the substrate, the first protective layer covers the gate layer, the material of the first protective layer is metal oxide semiconductor, and the oxygen content of the first protective layer is greater than the oxygen content of the metal oxide semiconductor active layer. The first protective layer in the driver board of the present application could block water vapor in the environment, so as to improve the transistor performance. ## Claims ### Claim 1 A driver board, comprising: a substrate; a metal oxide semiconductor active layer; a gate layer, arranged on the side of the metal oxide semiconductor active layer away from the substrate; a first protective layer, covered the gate layer, wherein the material of the first protective layer is metal oxide semiconductor, and the oxygen content of the first protective layer is greater than the oxygen content of the metal oxide semiconductor active layer; a source-drain layer and a second protective layer, wherein the source-drain layer is arranged on the side of the first protection layer away from the gate layer, the second protective layer covers the source-drain layer, the material of the second protective layer is metal oxide semiconductor, and the oxygen content of the second protective layer is greater than the oxygen content of the metal oxide semiconductor active layer; and a third protective layer and a passivation layer, wherein the passivation layer is arranged on the side of the second protection layer away from the source-drain layers, the third protective layer covers the passivation layer, and the oxygen content of the third protective layer is greater than the oxygen content of the metal oxide semiconductor active layer, wherein the third protective layer comprises a first protective sublayer, a second protective sublayer, and a third protective sublayer that are stacked, wherein the materials of the first protective sublayer and the third protective sublayer are metal oxide semiconductors, the oxygen content of the first protective sublayer and the third protective sublayer is greater than the oxygen content of the metal oxide semiconductor active layer, and the material of the second protective sublayer is an inorganic material. ### Claim 2 (depends on 1) The driver board according to claim 1, wherein the band gap of the metal oxide semiconductor of the at least one protective layer is 2.0 eV to 3.5 eV. ### Claim 3 (depends on 1) The driver board according to claim 1, wherein the sheet resistance of the metal oxide semiconductor of at least one protective layer is equal to or more than 10 to the power of 9 (109) Ω·cm−2. ### Claim 4 (depends on 1) The driver board according to claim 1, wherein the thickness of the metal oxide semiconductor of at least one protective layer is 10 nm to 30 nm. ### Claim 5 (depends on 1) The driver board according to claim 1, wherein the metal oxide semiconductor of at least one protective layer is an opaque material. ### Claim 6 (depends on 1) The driver board according to claim 1, wherein the material of the metal oxide semiconductor of each protective layer includes one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide. ### Claim 7 (depends on 1) The driver board according to claim 1, wherein a pixel electrode layer is arranged on the side of the passivation layer away from the substrate, and the film material of the pixel electrode layer is a high-permeability metal oxide material. ### Claim 8 A display panel, comprising a driver board and a light source, the driver board further comprises: a substrate; a metal oxide semiconductor active layer; a gate layer, arranged on the side of the metal oxide semiconductor active layer away from the substrate; a first protective layer, covered the gate layer, wherein the material of the first protective layer is metal oxide semiconductor, and the oxygen content of the first protective layer is greater than the oxygen content of the metal oxide semiconductor active layer; a source-drain layer and a second protective layer, wherein the source-drain layer is arranged on the side of the first protection layer away from the gate layer, the second protective layer covers the source-drain layer, the material of the second protective layer is metal oxide semiconductor, and the oxygen content of the second protective layer is greater than the oxygen content of the metal oxide semiconductor active layer; and a third protective layer and a passivation layer, wherein the passivation layer is arranged on the side of the second protection layer away from the source-drain layers, the third protective layer covers the passivation layer, and the oxygen content of the third protective layer is greater than the oxygen content of the metal oxide semiconductor active layer, wherein the third protective layer comprises a first protective sublayer, a second protective sublayer, and a third protective sublayer that are stacked, wherein the materials of the first protective sublayer and the third protective sublayer are metal oxide semiconductors, the oxygen content of the first protective sublayer and the third protective sublayer is greater than the oxygen content of the metal oxide semiconductor active layer, and the material of the second protective sublayer is an inorganic material. ### Claim 9 (depends on 8) The display panel according to claim 8, wherein the band gap of the metal oxide semiconductor of the at least one protective layer is 2.0 eV to 3.5 eV. ### Claim 10 (depends on 8) The display panel according to claim 8, wherein the sheet resistance of the metal oxide semiconductor of at least one protective layer is equal to or more than 10 to the power of 9 (109) Ω·cm−2. ### Claim 11 (depends on 8) The display panel according to claim 8, wherein the thickness of the metal oxide semiconductor of at least one protective layer is 10 nm to 30 nm. ### Claim 12 (depends on 8) The display panel according to claim 8, wherein the metal oxide semiconductor of at least one protective layer is an opaque material. ### Claim 13 (depends on 8) The display panel according to claim 8, wherein the material of the metal oxide semiconductor of each protective layer includes one or more of indium gallium zinc oxide, indium zinc tin oxide, and indium gallium zinc tin oxide. ### Claim 14 (depends on 8) The display panel according to claim 8, wherein a pixel electrode layer is arranged on the side of the passivation layer away from the substrate, and the film material of the pixel electrode layer is a high-permeability metal oxide material.