# US 12,119,347 B2 · Method of manufacturing a horizontal-nanosheet field-effect transistor

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- Number: US 12,119,347 B2
- Document ID: US12119347B2
- Status: Granted
- Kind: B2
- Application number: 18/332,298
- Filed: 2023-06-09
- Published: 2023-10-05
- Granted: 2024-10-15
- Earliest claimed: 2019-05-13
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Keomyoung Shin; Pankwi Park; Seunghun Lee
- Web page: https://patentgrep.com/patent/US12119347B2

## CPC

- H10D 84/834: {comprising FinFETs}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/0191: {forming stacked channels, e.g. changing their shapes or sizes}
- H10D 30/501: {FETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 62/121: {oriented parallel to substrates}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 62/80: characterised by the materials
- H10D 84/832: {comprising IGFETs having stacked nanowire, nanosheet or nanoribbon channels}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

An integrated circuit (IC) device includes a fin-type active region extending lengthwise in a first direction, a plurality of nanosheets overlapping each other in a second direction on a fin top surface of the fin-type active region, and a source/drain region on the fin-type active region and facing the plurality of nanosheets in the first direction. The plurality of nanosheets include a first nanosheet, which is closest to the fin top surface of the fin-type active region and has a shortest length in the first direction, from among the plurality of nanosheets. The source/drain region includes a source/drain main region and a first source/drain protruding region protruding from the source/drain main region. The first source/drain protruding region protrudes from the source/drain main region toward the first nanosheet and overlaps portions of the plurality of nanosheets in the second direction.

## Claims

### Claim 1

A method of manufacturing an integrated circuit device, the method comprising:
forming a structure including a fin-type active region and a pair of nanosheet stacks, the fin-type active region extending lengthwise in a first horizontal direction, each of the pair of nanosheet stacks including a plurality of nanosheets which overlap each other in a vertical direction on the fin-type active region;
partially removing a first nanosheet, which is closest to the fin-type active region from among the plurality of nanosheets of each of the pair of nanosheet stacks, to form a nanosheet indent region in each of the pair of nanosheet stacks; and
forming a source/drain region between the pair of nanosheet stacks on the fin-type active region, the source/drain region comprising a source/drain main region and a pair of source/drain protruding regions, wherein the source/drain main region is between the pair of nanosheet stacks, and the pair of source/drain protruding regions protrude in opposite directions from the source/drain main region toward the first nanosheet of each of the pair of nanosheet stacks and at least partially fill the nanosheet indent region in each of the pair of nanosheet stacks.

### Claim 2 (depends on 1)

The method of claim 1, wherein a composition of the first nanosheet is different from a composition of nanosheets other than the first nanosheet, from among the plurality of nanosheets.

### Claim 3 (depends on 1)

The method of claim 1, wherein after the partially removing the first nanosheet, the first nanosheet has a shortest length in the first horizontal direction, from among the plurality of nanosheets.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first nanosheet of each of the pair of nanosheet stacks includes a doped Si layer, and nanosheets other than the first nanosheet, from among the plurality of nanosheets, include an undoped Si layer.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first nanosheet of each of the pair of nanosheet stacks includes a SiGe layer, and nanosheets other than the first nanosheet, from among the plurality of nanosheets, include a Si layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the source/drain region comprises a first semiconductor layer doped with a first dopant of a first conductivity type,
wherein the first nanosheet comprises a second semiconductor layer doped with a second dopant of the first conductivity type, and
wherein nanosheets other than the first nanosheet, from among the plurality of nanosheets, comprise an undoped third semiconductor layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first nanosheet includes a doped compound semiconductor layer, and nanosheets other than the first nanosheet, from among the plurality of nanosheets, include an undoped compound semiconductor layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the plurality of nanosheets comprise a compound semiconductor layer, and
wherein the compound semiconductor layer includes a compound semiconductor selected from silicon germanium (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), germanium tin (GeSn), silicon tin (SiSn), and silicon germanium tin (SiGeSn).

### Claim 9 (depends on 1)

The method of claim 1, wherein the plurality of nanosheets comprise a compound semiconductor layer, and
wherein the compound semiconductor layer includes a compound semiconductor selected from indium gallium arsenide (InGaAs), indium gallium antimonide (InGaSb), indium arsenide (InAs), indium phosphide (InP), indium arsenide (InAs), gallium arsenide phosphide (GaAsP), and gallium indium phosphide (GaInP).

### Claim 10 (depends on 1)

The method of claim 1, wherein each of the plurality of nanosheets includes Si1-xGex (0<x<1), and
wherein a Ge content ratio of the first nanosheet is different from a Ge content ratio of the others of the plurality of nanosheets.

### Claim 11 (depends on 1)

The method of claim 1, wherein each of the plurality of nanosheets includes In1-yGayAs (0<y<1), and
wherein a Ga content ratio of the first nanosheet is different from a Ga content ratio of the others of the plurality of nanosheets.

### Claim 12 (depends on 1)

The method of claim 1, wherein each of the plurality of nanosheets includes In1-yGayAs (0<y<1), and
wherein an In content ratio of the first nanosheet is different from an In content ratio of the others of the plurality of nanosheets.

### Claim 13 (depends on 1)

The method of claim 1, wherein each of the plurality of nanosheets includes In1-zGazSb (0<z<1), and
wherein a Ga content ratio of the first nanosheet is different from a Ga content ratio of the others of the plurality of nanosheets.

### Claim 14 (depends on 1)

The method of claim 1, wherein in the forming the source/drain region, each of the pair of source/drain protruding regions is in physical contact with the first nanosheet of one of the pair of nanosheet stacks.

### Claim 15 (depends on 1)

The method of claim 1, further comprising:
after the forming of the source/drain region, forming a gate structure comprising a main gate portion extending in a second horizontal direction intersecting the first horizontal direction on the plurality of nanosheets and a plurality of sub-gate portions connected to the main gate portion, the plurality of sub-gate portions being interleaved with the plurality of nanosheets on the fin-type active region.

### Claim 16

A method of manufacturing an integrated circuit device, the method comprising:
forming a fin-type active region extending lengthwise in a first horizontal direction;
forming a nanosheet stack on the fin-type active region, the nanosheet stack including a plurality of nanosheets which overlap each other in a vertical direction on the fin-type active region;
partially removing a first nanosheet, which is closest to the fin-type active region from among the plurality of nanosheets, to form a pair of nanosheet indent regions on both sides of the first nanosheet in the first horizontal direction; and
forming a pair of source/drain regions on the fin-type active region, the pair of source/drain regions being spaced apart from each other with the nanosheet stack between the pair of source/drain regions, each of pair of source/drain regions comprising a source/drain main region and a source/drain protruding region, wherein the source/drain main region does not overlap the nanosheet stack in the vertical direction, and the source/drain protruding region protrudes from the source/drain main region toward the first nanosheet.

### Claim 17 (depends on 16)

The method of claim 16, wherein a composition of the first nanosheet is different from a composition of nanosheets other than the first nanosheet, from among the plurality of nanosheets.

### Claim 18 (depends on 16)

The method of claim 16, wherein the first nanosheet includes a doped Si layer, and nanosheets other than the first nanosheet, from among the plurality of nanosheets, include an undoped Si layer.

### Claim 19 (depends on 16)

The method of claim 16, wherein the first nanosheet includes a doped compound semiconductor layer, and nanosheets other than the first nanosheet, from among the plurality of nanosheets, include an undoped compound semiconductor layer.

### Claim 20

A method of manufacturing an integrated circuit device, the method comprising:
forming a structure including a fin-type active region extending lengthwise in a first horizontal direction;
forming a pair of nanosheet stacks on the fin-type active region, each of the pair of nanosheet stacks including a plurality of nanosheets which overlap each other in a vertical direction on the fin-type active region, wherein the plurality of nanosheets includes a first nanosheet closest to the fin-type active region from among the plurality of nanosheets, and a composition of the first nanosheet is different from a composition of nanosheets other than the first nanosheet, from among the plurality of nanosheets;
reducing a length of the first nanosheet in the first horizontal direction by selectively etching only the first nanosheet from among the plurality of nanosheets; and
forming a source/drain region between the pair of nanosheet stacks on the fin-type active region, the source/drain region comprising a source/drain main region and a pair of source/drain protruding regions, wherein the source/drain main region is between the pair of nanosheet stacks, and each of the pair of source/drain protruding regions is in physical contact with the first nanosheet of one of the pair of nanosheet stacks.