# US 12,119,294 B2 · Through-substrate via structure and method of manufacture

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- Number: US 12,119,294 B2
- Document ID: US12119294B2
- Status: Granted
- Kind: B2
- Application number: 18/177,953
- Filed: 2023-03-03
- Published: 2024-09-05
- Granted: 2024-10-15
- Earliest claimed: 2015-09-17
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Michael J. Seddon; Francis J. Carney
- Web page: https://patentgrep.com/patent/US12119294B2

## CPC

- H10W 70/635: {Through-vias}
- H02M 3/158: including plural semiconductor devices as final control devices for a single load
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10D 89/10: Integrated device layouts
- H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12}
- H10P 14/46: using a liquid
- H10P 50/242: {of Group IV materials}
- H10P 50/691: {for Group IV materials or Group III-V materials}
- H10P 50/693: {characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane}
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 72/0421: {for drying etching}
- H10P 72/74: {using temporarily an auxiliary support}
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10P 74/238: {comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement}
- H10P 90/18: {by shaping}
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes}
- H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates}
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/2125: {Top-view shapes}
- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- H10W 70/041: {Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps}
- H10W 70/095: {of vias therein}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/411: {Chip-supporting parts, e.g. die pads}
- H10W 70/415: {Leadframe inner leads serving as die pads}
- H10W 70/421: {Shapes or dispositions}
- H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/66: Conductive materials thereof
- H10W 72/00: Interconnections or connectors in packages
- H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices
- H10W 74/016: {using moulds}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 74/129: {forming a chip-scale package [CSP]}
- H10W 90/00: Package configurations
- H10W 90/28: the stacked chips having different sizes, e.g. chip stacks having a pyramidal shape
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 90/811: {Multiple chips on leadframes}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/806: {Optical elements or arrangements associated with the image sensors}
- H10P 72/7416: {used during dicing or grinding}
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 46/301: {for alignment}
- H10W 46/503: {Located in scribe lines}
- H10W 70/692: Ceramics or glasses
- H10W 70/698: Semiconductor materials that are electrically insulating, e.g. undoped silicon
- H10W 72/01225: {in solid form, e.g. by using a powder or by stud bumping}
- H10W 72/242: {relative to the surface, e.g. recessed, protruding}
- H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/884: {Die-attach connectors and bond wires}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/20: Configurations of stacked chips
- H10W 90/284: {characterised by structural arrangements for measuring or testing}
- H10W 90/732: {between stacked chips}
- H10W 90/766: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A through-substrate via structure includes a conductive via structure including trench portions at a first major surface of a substrate and extending to a first distance. A first insulating structure is over sidewalls of the trench portions, and a conductive material is over the first insulating structure. A recessed region extends from a second major surface of the substrate to a second distance greater than the first distance and laterally overlaps and interfaces both trench portions. A second insulating structure includes a first portion within the recessed region and a second portion adjacent to the second major surface outside of the recessed region, which includes an outer surface overlapping the second major surface outside of the recessed region. A first conductive region includes a proximate end coupled to the conductive material through openings in the first portion, and an opposite distal that is outward from the second portion.

## Claims

### Claim 1

A through-substrate via structure, comprising:
a substrate having a first major surface and a second major surface opposite to the first major surface;
a conductive via structure comprising:
a trench extending from the first major surface to a first distance within the substrate and comprising:
a first trench portion comprising first trench portion sidewalls and a first trench portion lower side; and
a second trench portion comprising second trench portion sidewalls and a second trench portion lower side, wherein the second trench portion is laterally separated from the first trench portion in a cross-sectional view such that a part of the substrate is interposed between the first trench portion and the second trench portion in the cross-sectional view;
a first insulating structure over the first trench portion sidewalls, the second trench portion sidewalls, and a portion of the first major surface interposed between the first trench portion and the second trench portion; and
a conductive material over the first insulating structure within the first trench portion and the second trench portion;
a second insulating structure over the first major surface and comprising first openings exposing the conductive material in the first trench portion and the second trench portion;
a conductive structure over the second insulating structure and coupled to the conductive material through the first openings;
a recessed region extending from the second major surface to a second distance within the substrate, wherein the second distance is greater than the first distance, and wherein the recessed region laterally overlaps both the first trench portion and the second trench portion in the cross-sectional view;
a third insulating structure comprising:
a first portion within the recessed region and adjacent to the part of the substrate interposed between the first trench portion and the second trench portion and comprising second openings exposing the conductive material in the first trench portion and the second trench portion; and
a second portion adjacent to the second major surface outside of the recessed region and comprising an outer surface distal to and overlapping the second major surface outside of the recessed region along a first plane; and
a first conductive region comprising:
a proximate end coupled to the conductive material through the second openings; and
a distal end opposite to the proximate end, wherein the distal end is outside of the first plane.

### Claim 2 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the conductive structure comprises a bond pad configured to couple with an electronic component.

### Claim 3 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the conductive material is recessed below the first major surface; and
the conductive structure contacts the conductive material within the first trench portion and the second portion below the first major surface.

### Claim 4 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the first conductive region comprises:
a conductive layer that extends along a first sidewall surface of the recessed region without extending along at least a portion of a second sidewall surface of the recessed region opposite to the first sidewall surface in the cross-sectional view and extends over the second portion of the third insulating structure, wherein the conductive layer defines the proximate end of the first conductive region; and
a conductive bump coupled to the conductive layer, wherein the conductive bump defines the distal end of the first conductive region.

### Claim 5 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the first conductive region comprises:
a conductive layer along sidewall surfaces of the recessed region, wherein the conductive layer defines the proximate end of the first conductive region; and
a conductive bump coupled to the conductive layer inside of the recessed region, wherein the conductive bump defines the distal end of the first conductive region.

### Claim 6 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the first conductive region comprises:
a conductive-fill structure disposed within the recessed region so as to laterally extend between opposing sidewalls of the recessed region in a cross-sectional view, the conductive-fill structure having an outermost surface distal to the conductive via structure; and
a solder structure disposed adjacent to the outermost surface of the conductive-fill structure, the solder structure extending outside of the recessed region such that solder structure defines the distal end of the first conductive region.

### Claim 7 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the first distance is in a range from about 10 microns through about 20 microns.

### Claim 8 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the substrate comprises a thickness greater than 200 microns.

### Claim 9 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the conductive material comprises tungsten; and
the first conductive region comprises copper.

### Claim 10 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the substrate comprises at least one side 15 millimeters in length and comprises a thickness greater than or equal to 250 microns.

### Claim 11 (depends on 1)

The through-substrate via structure of claim 1, wherein:
the first insulating structure is over a portion of the first trench portion lower side.

### Claim 12

A through-substrate via structure, comprising:
a substrate having a first major surface and a second major surface opposite to the first major surface;
a conductive via structure comprising:
a trench extending from the first major surface to a first distance within the substrate and comprising:
a first trench portion comprising first trench portion sidewalls and a first trench portion lower side; and
a second trench portion comprising second trench portion sidewalls and a second trench portion lower side, wherein the second trench portion is laterally separated from the first trench portion in a cross-sectional view such that a part of the substrate is interposed between the first trench portion and the second trench portion in the cross-sectional view;
a first insulating structure over the first trench portion sidewalls and the second trench portion sidewalls; and
a conductive material over the first insulating structure within the first trench portion and the second trench portion;
a second insulating structure over the first major surface and comprising first openings exposing the conductive material in the first trench portion and the second trench portion;
a conductive structure over the second insulating structure and coupled to the conductive material through the first openings;
a recessed region extending from the second major surface to a second distance within the substrate and comprising a recessed surface that is parallel to and recessed from the second major surface, wherein the second distance is greater than the first distance, and wherein both the first trench portion and the second trench portion interface with the recessed surface in the cross-sectional view;
a third insulating structure comprising:
a first portion within the recessed region and adjacent to the part of the substrate interposed between the first trench portion and the second trench portion and comprising second openings exposing the conductive material in the first trench portion and the second trench portion; and
a second portion adjacent to the second major surface outside of the recessed region and comprising an outer surface distal to and overlapping the second major surface outside of the recessed region; and
a first conductive region comprising:
a proximate end coupled to the conductive material through the second openings; and
a distal end opposite to the proximate end, wherein the distal end is outside of the recessed region and extends outward from the outer surface of the second portion of the third insulating structure.

### Claim 13 (depends on 12)

The through-substrate via structure of claim 12, wherein:
the first conductive region comprises:
a conductive layer that extends along a first sidewall surface of the recessed region without extending along at least a portion of a second sidewall surface of the recessed region opposite to the first sidewall surface in the cross-sectional view and extends over the second portion of the third insulating structure, wherein the conductive layer defines the proximate end of the first conductive region; and
a conductive bump coupled to the conductive layer, wherein the conductive bump defines the distal end of the first conductive region.

### Claim 14 (depends on 12)

The through-substrate via structure of claim 12, wherein:
the first conductive region comprises:
a conductive layer along sidewall surfaces of the recessed region, wherein the conductive layer defines the proximate end of the first conductive region; and
a conductive bump coupled to the conductive layer inside of the recessed region, wherein the conductive bump defines the distal end of the first conductive region.

### Claim 15 (depends on 12)

The through-substrate via structure of claim 12, wherein:
the first conductive region comprises:
a conductive-fill structure disposed within the recessed region so as to laterally extend between opposing sidewalls of the recessed region in a cross-sectional view, the conductive-fill structure having an outermost surface distal to the conductive via structure; and
a solder structure disposed adjacent to the outermost surface of the conductive-fill structure, the solder structure extending outside of the recessed region such that solder structure defines the distal end of the first conductive region.

### Claim 16 (depends on 12)

The through-substrate via structure of claim 12, wherein:
the proximate end of the first conductive region physically contacts the conductive material at an interface between the substrate and the first portion of the third insulating structure.

### Claim 17

A through-substrate via structure, comprising:
a substrate having a first major surface and a second major surface opposite to the first major surface;
a conductive via structure comprising:
a trench extending from the first major surface to a first distance within the substrate and comprising:
a first trench portion comprising first trench portion sidewalls and a first trench portion lower side; and
a second trench portion comprising second trench portion sidewalls and a second trench portion lower side, wherein the second trench portion is laterally separated from the first trench portion in a cross-sectional view such that a part of the substrate is interposed between the first trench portion and the second trench portion in the cross-sectional view;
a first insulating structure over the first trench portion sidewalls and the second trench portion sidewalls; and
a conductive material over the first insulating structure within the first trench portion and the second trench portion;
a second insulating structure over the first major surface and comprising first openings exposing the conductive material in the first trench portion and the second trench portion;
a conductive structure over the second insulating structure and coupled to the conductive material through the first openings;
a recessed region extending from the second major surface to a second distance within the substrate, comprising:
a recessed surface that is parallel to and recessed from the second major surface; and
sidewall portions extending from the recessed surface to the second major surface,
wherein:
the second distance is greater than the first distance,
the recessed surface comprises a perimeter that adjoins the sidewall portions; and
both the first trench portion and the second trench portion are inside the perimeter;
a third insulating structure comprising:
a first portion within the recessed region and adjacent to the part of the substrate interposed between the first trench portion and the second trench portion and comprising second openings exposing the conductive material in the first trench portion and the second trench portion; and
a second portion adjacent to the second major surface outside of the recessed region and comprising an outer surface distal to and overlapping the second major surface outside of the recessed region; and
a first conductive region comprising:
a proximate end coupled to the conductive material through the second openings; and
a distal end opposite to the proximate end, wherein the distal end is outside of the recessed region and extends outward from the outer surface of the second portion of the third insulating structure.

### Claim 18 (depends on 17)

The through-substrate via structure of claim 17, wherein:
the first conductive region comprises:
a conductive layer that extends along a first sidewall surface of the recessed region without extending along at least a portion of a second sidewall surface of the recessed region opposite to the first sidewall surface in the cross-sectional view and extends over the second portion of the third insulating structure, wherein the conductive layer defines the proximate end of the first conductive region; and
a conductive bump coupled to the conductive layer, wherein the conductive bump defines the distal end of the first conductive region.

### Claim 19 (depends on 17)

The through-substrate via structure of claim 17, wherein:
the first conductive region comprises:
a conductive layer along sidewall surfaces of the recessed region, wherein the conductive layer defines the proximate end of the first conductive region; and
a conductive bump coupled to the conductive layer inside of the recessed region, wherein the conductive bump defines the distal end of the first conductive region.

### Claim 20 (depends on 17)

The through-substrate via structure of claim 17, wherein:
the first conductive region comprises:
a conductive-fill structure disposed within the recessed region so as to laterally extend between the sidewall portions, wherein the conductive-fill structure defines the proximate end of the first conductive region, and wherein the conductive-fill structure comprises an outermost surface distal to the conductive via structure; and
a solder structure disposed adjacent to the outermost surface of the conductive-fill structure, wherein the solder structure extends outside of the recessed region such that the solder structure defines the distal end of the first conductive region.