# US 12,119,290 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,290 B2 - Document ID: US12119290B2 - Status: Granted - Kind: B2 - Application number: 18/307,775 - Filed: 2023-04-26 - Published: 2024-03-07 - Granted: 2024-10-15 - Earliest claimed: 2017-11-20 - Assignees: Rohm Co., Ltd. - Applicants: Rohm Co., Ltd. - Inventors: Takumi Kanda; Masaaki Matsuo; Soichiro Takahashi; Yoshitoki Inami; Kaito Inoue - Web page: https://patentgrep.com/patent/US12119290B2 ## CPC - H10W 70/468: {Circuit boards} - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 44/501: {Inductive arrangements (H10W44/20 takes precedence)} - H10W 70/456: {Materials} - H10W 70/466: {Tape carriers or flat leads} - H10W 70/611: {for connecting multiple chips together} - H10W 70/65: Shapes or dispositions of interconnections - H10W 90/811: {Multiple chips on leadframes} - H02M 1/0009: {Devices or circuits for detecting current in a converter} - H02M 3/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H02M 7/003: {Constructional details, e.g. physical layout, assembly, wiring or busbar connections} - H10W 72/07554: {changes in dispositions} - H10W 72/07651: {characterised by changes in properties of the strap connectors during connecting} - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 72/547: {Dispositions of multiple bond wires} - H10W 72/60: Strap connectors, e.g. thick copper clips for grounding of power devices - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/926: {Multiple bond pads having different sizes} - H10W 72/944: {Dispositions of multiple bond pads} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 90/764: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) ## Abstract A semiconductor device includes a first conductive plate, a second conductive plate, first switching elements, second switching elements, a first supply terminal and a second supply terminal. The first and second conductive plates are spaced apart from each other in a first direction. The first switching elements are bonded to the first conductive plate, and are electrically connected to the second conductive plate. The second switching elements are bonded to the second conductive plate. The first supply terminal is bonded to the first conductive plate. The second supply terminal has a region that overlaps with the first supply terminal as viewed in a plan view. The second supply terminal is spaced apart from the first conductive plate and the first supply terminal in a thickness direction perpendicular to the first direction. The second supply terminal is electrically connected to the second switching elements. ## Claims ### Claim 1 A semiconductor device comprising: a first conductive plate including a first main surface perpendicular to a thickness direction of the first conductive plate; a second conductive plate including a second main surface perpendicular to the thickness direction, the second conductive plate being spaced apart from the first conductive plate in a first direction perpendicular to the thickness direction; a plurality of first switching elements electrically bonded to the first conductive plate and electrically connected to the second conductive plate; a plurality of second switching elements electrically bonded to the second conductive plate; a first supply terminal electrically bonded to the first conductive plate; a second supply terminal having a region that overlaps with the first supply terminal as viewed in the thickness direction, the second supply terminal being spaced apart from the first conductive plate and the first supply terminal in the thickness direction; a terminal insulating member being plate-shaped and interposed between the first supply terminal and the second supply terminal in the thickness direction, wherein the second supply terminal is electrically connected to the plurality of second switching elements, the terminal insulating member is greater in size than each of the first supply terminal and the second supply terminal in a second direction perpendicular to the thickness direction and the first direction; and an insulating layer including a main surface perpendicular to the thickness direction, wherein the first conductive plate and the second conductive plate are bonded to the main surface of the insulating layer, the first conductive plate and the second conductive plate have a thickness that is larger than a thickness of the insulating layer, and the first conductive plate and the second conductive plate each have a first layer and a second layer, the first layer being bonded to the main surface of the insulating layer, and the second layer being located on a side of the first layer opposite to the insulating layer in the thickness direction, and the second layer has a thickness that is larger than a thickness of the first layer. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the first conductive plate and the second conductive plate are made of a material that contains Cu. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein each of the plurality of second switching elements is provided with a main surface electrode, the second supply terminal includes a first band-shaped portion and a second band-shaped portion, the first band-shaped portion extending in the second direction, and the second band-shaped portion extending from the first band-shaped portion toward the second conductive plate, and the second band-shaped portion is respectively electrically connected to the main surface electrodes of the plurality of second switching elements. ### Claim 4 (depends on 3) The semiconductor device according to claim 3, wherein the second band-shaped portion is bonded to the first main surface of the first conductive plate via insulators. ### Claim 5 (depends on 3) The semiconductor device according to claim 3, wherein the second band-shaped portion is bonded to the main surface electrode of a corresponding one of the plurality of second switching elements. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, further comprising a resin member that covers the first conductive plate, the second conductive plate, the plurality of first switching elements, and the plurality of second switching elements, wherein the first supply terminal and the second supply terminal each have an exposed portion that is exposed from the resin member, and the exposed portion extends to a side away from the second conductive plate in the first direction. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, further comprising an output terminal electrically bonded to the second conductive plate, wherein the output terminal has an exposed portion that is exposed from the resin member, and the exposed portion of the output terminal extends to a side away from the first conductive plate in the first direction. ### Claim 8 (depends on 6) The semiconductor device according to claim 6, further comprising an insulating layer, wherein the first conductive plate has a first back surface on a side opposite to the first main surface, the second conductive plate has a second back surface on a side opposite to the second main surface, the resin member has a back surface that is oriented toward the same side, in the thickness direction, as the side toward which the first back surface and the second back surface are oriented, and the insulating layer is bonded to the first back surface and the second back surface and is exposed from the back surface of the sealing resin. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the insulating layer includes: a first region bonded to the first back surface, and a second region bonded to the second back surface, and the first region and the second region are spaced apart from each other in the first direction. ### Claim 10 (depends on 6) The semiconductor device according to claim 6, wherein each of an external connection portion of the first supply terminal, an external connection portion of the second supply terminal, and the terminal insulating member is partially exposed from one of a pair of first side surfaces of the resin member, and an external connection portion of an output terminal is exposed from another one of the pair of first side surfaces of the resin member. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, further comprising a metal layer, wherein the insulating layer has a back surface on a side opposite to the main surface, the metal layer is bonded to the back surface of the insulating layer, and the metal layer has a thickness that is smaller than the thickness of the first conductive plate and the second conductive plate. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, further comprising a heat radiator bonded to the metal layer. ### Claim 13 (depends on 6) An automobile comprising; a power source; and the semiconductor device according to claim 6, wherein the semiconductor device is connected to the power source. ### Claim 14 (depends on 1) The semiconductor device according to claim 1, further comprising: a plurality of first diodes being electrically bonded to the first conductive plate and constituting parallel circuits that correspond to the first switching elements; and a plurality of second diodes being electrically bonded to the second conductive plate and constituting parallel circuits that correspond to the second switching elements. ### Claim 15 (depends on 1) The semiconductor device according to claim 1, wherein each of the plurality of first switching elements is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) mainly composed of SiC (silicon carbide). ### Claim 16 (depends on 1) The semiconductor device according to claim 1, wherein each of the plurality of first switching elements is a IGBT (Insulated Gate Bipolar Transistor).