# US 12,119,283 B2 · Heat dissipation structure, method for forming heat dissipation structure, and semiconductor structure

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- Number: US 12,119,283 B2
- Document ID: US12119283B2
- Status: Granted
- Kind: B2
- Application number: 17/669,514
- Filed: 2022-02-11
- Published: 2023-01-12
- Granted: 2024-10-15
- Earliest claimed: 2021-07-07
- Assignees: Changxin Memory Technologies, Inc.
- Applicants: Changxin Memory Technologies, Inc.
- Inventors: Luguang Wang
- Web page: https://patentgrep.com/patent/US12119283B2

## CPC

- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/228: {the projecting parts being wire-shaped or pin-shaped}
- H10W 20/01: {Manufacture or treatment}
- H10W 20/0245: {comprising use of blind vias during the manufacture}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers}
- H10W 40/43: by flowing gases, e.g. forced air cooling
- H10W 70/02: of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04)
- H10W 72/00: Interconnections or connectors in packages
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are a heat dissipation structure, a method for forming a heat dissipation structure, and a semiconductor structure. The heat dissipation structure includes a first heat dissipation ring and a second heat dissipation ring. The first heat dissipation ring is formed in a dielectric layer around a Through Silicon Via (TSV) and in contact with the TSV. The TSV passes through a silicon substrate and the dielectric layer. The second heat dissipation ring is formed around the first heat dissipation ring, and in contact with the first heat dissipation ring. The second heat dissipation ring has a heat dissipation gap within it. A dimension of the second heat dissipation ring in a first direction is less than that of the first heat dissipation ring in the first direction. The first direction is a thickness direction of the silicon substrate.

## Claims

### Claim 1

A heat dissipation structure, comprising
a first heat dissipation ring and at least one second heat dissipation ring, wherein
the first heat dissipation ring is formed in a dielectric layer around a Through Silicon Via (TSV) and is in contact with the TSV, wherein the TSV passes through a silicon substrate of a chip and the dielectric layer located on a surface of the silicon substrate;
the second heat dissipation ring is formed around the first heat dissipation ring and is in contact with the first heat dissipation ring, the second heat dissipation ring has a heat dissipation gap in an interior of the second heat dissipation ring, a dimension of the second heat dissipation ring in a first direction is less than a dimension of the first heat dissipation ring in the first direction, and the first direction is a thickness direction of the silicon substrate.

### Claim 2 (depends on 1)

The heat dissipation structure of claim 1, wherein
the heat dissipation structure comprises at least two second heat dissipation rings, and any two adjacent second heat dissipation rings are in contact with each other;
the dimensions, in the first direction, of the at least two second heat dissipation rings arranged successively in a direction from a center of the TSV to an outside of the TSV, sequentially decrease.

### Claim 3 (depends on 2)

The heat dissipation structure of claim 2, wherein
a first heat conduction metal material is filled in the first heat dissipation ring, and a second heat conduction metal material of a predetermined volume is filled in each second heat dissipation ring;
the first heat conduction metal material is the same as or different from the second heat conduction metal material.

### Claim 4 (depends on 3)

The heat dissipation structure of claim 3, wherein
the second heat conduction metal material is deposited on a bottom and sidewall of the second heat dissipation ring;
the predetermined volume is greater than or equal to 10% of a total volume of a second etched annulus;
and the predetermined volume is less than or equal to 70% of the total volume of the second etched annulus.

### Claim 5 (depends on 2)

The heat dissipation structure of claim 2, wherein
the dimension of the second heat dissipation ring in a second direction is 0.1 μm to 1 μm;
the dimensions in the second direction of any two second heat dissipation rings are the same or different, and the second direction is perpendicular to the first direction.

### Claim 6 (depends on 2)

The heat dissipation structure of claim 2, wherein
a first dimension difference in the first direction between the first heat dissipation ring and the second heat dissipation ring adjacent to the first heat dissipation ring, and a second dimension difference in the first direction between any two adjacent second heat dissipation rings, are the same or different;
the dimension differences in the first direction of any two adjacent second heat dissipation rings are the same or different.

### Claim 7

A method for forming a heat dissipation structure, comprising:
providing a chip at least comprising a through silicon via (TSV) passing through a silicon substrate and a dielectric layer;
forming a first heat dissipation ring of the heat dissipation structure around the TSV in the dielectric layer, wherein the first heat dissipation ring is in contact with the TSV; and
forming a second heat dissipation ring of the heat dissipation structure around the first heat dissipation ring, wherein the second heat dissipation ring is in contact with the first heat dissipation ring; the second heat dissipation ring has a heat dissipation gap in an interior of the second heat dissipation ring; a dimension of the second heat dissipation ring in a first direction is less than a dimension of the first heat dissipation ring in the first direction; and the first direction is a thickness direction of the silicon substrate.

### Claim 8 (depends on 7)

The method for forming the heat dissipation structure of claim 7, wherein
the heat dissipation structure comprises at least two second heat dissipation rings, and any two adjacent second heat dissipation rings are in contact with each other;
the dimensions, in the first direction, of the at least two second heat dissipation rings arranged successively in a direction from a center of the TSV to an outside of the TSV, sequentially decrease.

### Claim 9 (depends on 7)

The method for forming the heat dissipation structure of claim 7, wherein
the forming a first heat dissipation ring of the heat dissipation structure around the TSV in the dielectric layer comprises:
etching the dielectric layer around the TSV to form a first etched annulus in contact with the TSV; and
filling the first etched annulus with a first heat conduction metal material to form the first heat dissipation ring of the heat dissipation structure.

### Claim 10 (depends on 9)

The method for forming the heat dissipation structure of claim 9, wherein
the forming a second heat dissipation ring of the heat dissipation structure around the first heat dissipation ring comprises:
etching the dielectric layer around the first heat dissipation ring to form a second etched annulus in contact with the first heat dissipation ring;
depositing a second heat conduction metal material of a predetermined volume on a sidewall and a bottom of the second etched annulus by a predetermined deposition process; and
forming a closure at a top of the second etched annulus in which the second heat conduction metal material is deposited, to form the second heat dissipation ring of the heat dissipation structure.

### Claim 11 (depends on 10)

The method for forming the heat dissipation structure of claim 10, wherein
the predetermined volume is greater than or equal to 10% of a total volume of the second etched annulus;
and the predetermined volume is less than or equal to 70% of the total volume of the second etched annulus;
the predetermined deposition process comprises a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process.

### Claim 12 (depends on 10)

The method for forming the heat dissipation structure of claim 10, wherein
the forming a closure at the top of the second etched annulus in which the second heat conduction metal material is deposited comprises:
depositing, by a chemical vapor deposition (CVD) process, a closure material at the top of the second etched annulus in which the second heat conduction metal material is deposited, to form the closure;
wherein a material of the closure comprises an insulation material.

### Claim 13 (depends on 10)

The method for forming the heat dissipation structure of claim 10, wherein
the first heat conduction metal material is the same as or different from the second heat conduction metal material;
the first heat conduction metal material and the second heat conduction metal material at least comprise one of tungsten, cobalt, copper, aluminum, gold, or tantalum.

### Claim 14 (depends on 9)

The method for forming the heat dissipation structure of claim 9, wherein
at least a buffer layer, a barrier layer and a conductive pillar are successively formed in the TSV; and
wherein the etching the dielectric layer around the TSV to form a first etched annulus comprises:
etching the dielectric layer around the TSV by a dry etch process or a wet etch process with the buffer layer, the barrier layer and the conductive pillar being retained in the TSV, to form the first etched annulus.

### Claim 15

A semiconductor structure, at least comprising
a Through Silicon Via (TSV) and a heat dissipation structure comprising a first heat dissipation ring and at least one second heat dissipation ring, wherein
the first heat dissipation ring is formed in a dielectric layer around the TSV and is in contact with the TSV, wherein the TSV passes through a silicon substrate of a chip and the dielectric layer located on a surface of the silicon substrate;
the second heat dissipation ring is formed around the first heat dissipation ring and is in contact with the first heat dissipation ring, the second heat dissipation ring has a heat dissipation gap in an interior of the second heat dissipation ring, a dimension of the second heat dissipation ring in a first direction is less than a dimension of the first heat dissipation ring in the first direction, and the first direction is a thickness direction of the silicon substrate;
the heat dissipation structure is formed in the dielectric layer around the TSV, and the heat dissipation structure is in contact with the TSV.

### Claim 16 (depends on 1)

The heat dissipation structure of claim 1, wherein
a closure is formed on the second heat dissipation ring to covering the heat the second heat dissipation ring, and a material of the closure comprises an insulation material.