Method for producing package substrate for mounting semiconductor device
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsSyunsuke Hirano, Yoshihiro Kato, Takaaki Ogashiwa
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AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsSyunsuke Hirano, Yoshihiro Kato, Takaaki Ogashiwa
Estimating the term…
A method for producing a package substrate for mounting a semiconductor device includes: forming a first substrate by forming a laminate in which a first metal layer that has a thickness of 1 μm to 70 μm and that is peelable from a core resin layer, a first insulating resin layer, and a second metal layer are arranged on both sides of the core resin layer having a thickness of 1 μm to 80 μm, and heating and pressurizing the laminate simultaneously; forming a pattern on the second metal layer; forming a second substrate by heating and pressurizing a laminate formed by arranging a second insulating resin layer and a third metal layer on a surface of the second metal layer; and peeling, from the core resin layer, a third substrate including the first metal and insulating resin layers, the second metal and insulating layers, and the third metal layer.
A method for producing a package substrate for mounting a semiconductor device comprising an insulating layer and a wiring conductor provided on the insulating layer, wherein the method comprises:
Dependencies are inferred from the claim text.