# US 12,119,272 B2 · Semiconductor device and method for fabricating the same

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- Number: US 12,119,272 B2
- Document ID: US12119272B2
- Status: Granted
- Kind: B2
- Application number: 18/233,331
- Filed: 2023-08-14
- Published: 2023-11-30
- Granted: 2024-10-15
- Earliest claimed: 2018-06-12
- Assignees: United Microelectronics Corp.
- Applicants: United Microelectronics Corp.
- Inventors: Fu-Jung Chuang; Po-Jen Chuang; Yu-Ren Wang; Chi-Mao Hsu; Chia-Ming Kuo; Guan-Wei Huang; Chun-Hsien Lin
- Web page: https://patentgrep.com/patent/US12119272B2

## CPC

- H10D 84/0167: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

## Claims

### Claim 1

A semiconductor device, comprising:
a fin-shaped structure on a substrate;
a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion; and
more than two gate structures on the SDB structure, wherein the more than two gate structures comprise:
a first gate structure, a second gate structure, and a third gate structure on the SDB structure.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the first gate structure overlaps the fin-shaped structure and the SDB structure.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the second gate structure overlaps the fin-shaped structure and the SDB structure.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising:
a fourth gate structure on the SDB structure.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the third gate structure and the fourth gate structure are between the first gate structure and the second gate structure.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the fin-shaped structure is disposed extending along a first direction and the SDB structure is disposed extending along a second direction.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, wherein the first direction is orthogonal to the second direction.

### Claim 8 (depends on 1)

The semiconductor device of claim 1, wherein the SDB structure comprises silicon oxycarbonitride (SiOCN).

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein a concentration proportion of oxygen in SiOCN is between 30% to 60%.

### Claim 10 (depends on 1)

The semiconductor device of claim 1, wherein a stress of the SDB structure is between 100 MPa to-500 MPa.