# US 12,119,270 B2 · Hybrid source drain regions formed based on same fin and methods forming same

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- Number: US 12,119,270 B2
- Document ID: US12119270B2
- Status: Granted
- Kind: B2
- Application number: 17/360,135
- Filed: 2021-06-28
- Published: 2021-10-21
- Granted: 2024-10-15
- Earliest claimed: 2019-07-18
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Pei-Hsun Wang; Shih-Cheng Chen; Chun-Hsiung Lin; Chih-Hao Wang
- Web page: https://patentgrep.com/patent/US12119270B2

## CPC

- H10D 84/0167: {Manufacturing their channels}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/853: {comprising FinFETs}
- H10D 84/0172: {Manufacturing their gate conductors}
- H10P 50/242: {of Group IV materials}
- H10P 50/642: {Chemical etching}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes forming an epitaxy semiconductor layer over a semiconductor substrate, and etching the epitaxy semiconductor layer and the semiconductor substrate to form a semiconductor strip, which includes an upper portion acting as a mandrel, and a lower portion under the mandrel. The upper portion is a remaining portion of the epitaxy semiconductor layer, and the lower portion is a remaining portion of the semiconductor substrate. The method further includes growing a first semiconductor fin starting from a first sidewall of the mandrel, growing a second semiconductor fin starting from a second sidewall of the mandrel. The first sidewall and the second sidewall are opposite sidewalls of the mandrel. A first transistor is formed based on the first semiconductor fin. A second transistor is formed based on the second semiconductor fin.

## Claims

### Claim 1

A device comprising:
a bulk semiconductor substrate;
a semiconductor strip over and joined to the bulk semiconductor substrate;
a gate stack comprising a first portion overlapping, and contacting, the semiconductor strip;
a first semiconductor fin and a second semiconductor fin contacting opposite sidewalls of the first portion of the gate stack, wherein the gate stack further comprises:
a second portion on an opposite side of the first semiconductor fin than the first portion; and
a third portion on an opposite side of the second semiconductor fin than the first portion;
a first source/drain region connected to the first semiconductor fin;
a second source/drain region connected to the second semiconductor fin; and
a dielectric fin, wherein the first source/drain region and the second source/drain region are in contact with opposite sidewalls of the dielectric fin.

### Claim 2 (depends on 1)

The device of claim 1 further comprising a first isolation region and a second isolation region, wherein lower portions of the first isolation region and the second isolation region are in contact with opposite sidewalls of the semiconductor strip.

### Claim 3 (depends on 2)

The device of claim 2, wherein the first isolation region and the second isolation region comprise top surfaces higher than a top surface of the first semiconductor fin.

### Claim 4 (depends on 2)

The device of claim 2, wherein the first isolation region and the second isolation region comprise top surfaces higher than a top surface of the first source/drain region.

### Claim 5 (depends on 2)

The device of claim 2, wherein the first isolation region and the second isolation region form a trench in between, and the first semiconductor fin, the second semiconductor fin, the first source/drain region, and the second source/drain region are in the trench.

### Claim 6 (depends on 1)

The device of claim 1, wherein the first source/drain region and the second source/drain region are of opposite conductivity types.

### Claim 7 (depends on 1)

The device of claim 1, wherein the dielectric fin comprises silicon germanium oxide.

### Claim 8 (depends on 1)

The device of claim 1, wherein the dielectric fin overlaps and contacts the semiconductor strip.

### Claim 9 (depends on 1)

The device of claim 1, wherein the gate stack contacts a top surface and sidewalls of the first semiconductor fin.

### Claim 10 (depends on 9)

The device of claim 9, wherein the gate stack further extends directly underlying the first semiconductor fin.

### Claim 11 (depends on 1)

The device of claim 1, wherein the first source/drain region and the second source/drain region have opposite conductivity types.

### Claim 12

A device comprising:
a first isolation region;
a second isolation region;
a first transistor in a space between the first isolation region and the second isolation region, wherein the first transistor comprises a first semiconductor fin and a first source/drain region connected to the first semiconductor fin, wherein the first transistor is a p-type transistor; and
a second transistor in the space, wherein the second transistor comprises a second semiconductor fin and a second source/drain region connected to the second semiconductor fin, wherein the second transistor is an n-type transistor.

### Claim 13 (depends on 12)

The device of claim 12 further comprising:
a semiconductor substrate;
a semiconductor strip between, and comprising opposite sidewalls contacting, the first isolation region and the second isolation region; and
a dielectric fin overlapping and contacting the semiconductor strip, wherein the first semiconductor fin and the second semiconductor fin contact opposite edges of the dielectric fin.

### Claim 14 (depends on 13)

The device of claim 13, wherein the dielectric fin is narrower than the semiconductor strip, with the opposite edges of the dielectric fin being laterally recessed from respective ones of the opposite sidewalls of the semiconductor strip.

### Claim 15 (depends on 12)

The device of claim 12, wherein the first source/drain region comprises a first sidewall in physical contact with a second sidewall of the first isolation region.

### Claim 16 (depends on 15)

The device of claim 15, wherein the second source/drain region comprises a third sidewall in physical contact with a fourth sidewall of the second isolation region.

### Claim 17

A device comprising:
a first isolation region and a second isolation region spaced apart from each other;
a first semiconductor fin and a second semiconductor fin between the first isolation region and the second isolation region, wherein the first semiconductor fin and the second semiconductor fin are spaced apart from each other;
a dielectric fin;
a first source/drain region connected to the first semiconductor fin, wherein the first source/drain region is between the dielectric fin and the first isolation region; and
a second source/drain region connected to the second semiconductor fin, wherein the second source/drain region is between the dielectric fin and the second isolation region.

### Claim 18 (depends on 17)

The device of claim 17 further comprising a gate stack on the first semiconductor fin and the second semiconductor fin, wherein the first semiconductor fin is spaced apart from the first isolation region by the gate stack, and the second semiconductor fin is spaced apart from the second isolation region by the gate stack.

### Claim 19 (depends on 18)

The device of claim 18, wherein the first semiconductor fin and the second semiconductor fin are further spaced apart from each other by the gate stack.

### Claim 20 (depends on 17)

The device of claim 17, wherein the first source/drain region is in direct contact with both of the dielectric fin and the first isolation region.