# US 12,119,268 B2 · Multi-layered insulating film stack

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- Number: US 12,119,268 B2
- Document ID: US12119268B2
- Status: Granted
- Kind: B2
- Application number: 18/363,439
- Filed: 2023-08-01
- Published: 2023-11-30
- Granted: 2024-10-15
- Earliest claimed: 2020-06-26
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Chieh-Ping Wang; Ting-Gang Chen; Bo-Cyuan Lu; Tai-Chun Huang; Chi On Chui
- Web page: https://patentgrep.com/patent/US12119268B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 64/01326: {Aspects related to lithography, isolation or planarisation of the conductor}
- H10D 84/0135: {Manufacturing their gate conductors}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/8316: {the IGFETs characterised by having gate sidewall spacers specially adapted for integration}
- H10D 84/834: {comprising FinFETs}
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 50/283: {by chemical means}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/021: {of air gaps}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10W 10/20: Air gaps
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for forming a semiconductor device includes: forming a gate structure over a fin, where the fin protrudes above a substrate; forming an opening in the gate structure; forming a first dielectric layer along sidewalls and a bottom of the opening, where the first dielectric layer is non-conformal, where the first dielectric layer has a first thickness proximate to an upper surface of the gate structure distal from the substrate, and has a second thickness proximate to the bottom of the opening, where the first thickness is larger than the second thickness; and forming a second dielectric layer over the first dielectric layer to fill the opening, where the first dielectric layer is formed of a first dielectric material, and the second dielectric layer is formed of a second dielectric material different from the first dielectric material.

## Claims

### Claim 1

A method for forming a semiconductor device, the method comprising:
forming a gate structure over a first fin and over a second fin, wherein the first fin and the second fin protrude above a substrate;
forming an opening in the gate structure between the first fin and the second fin;
lining sidewalls and a bottom of the opening with a first dielectric layer, wherein a thickness of the first dielectric layer decreases as the first dielectric layer extends from an upper surface of the gate structure distal from the substrate toward a bottom of the opening; and
forming a second dielectric layer in the opening over the first dielectric layer, wherein the first dielectric layer is formed of a first dielectric material, and the second dielectric layer is formed of a second dielectric material different from the first dielectric material.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first dielectric material has a higher dielectric constant than the second dielectric material.

### Claim 3 (depends on 1)

The method of claim 1, wherein the opening is formed to extend through the gate structure and into an isolation region between the first fin and the second fin.

### Claim 4 (depends on 3)

The method of claim 3, wherein the opening is formed to further extend into the substrate.

### Claim 5 (depends on 1)

The method of claim 1, wherein an air gap is formed in a portion of the first dielectric layer proximate to the bottom of the opening.

### Claim 6 (depends on 1)

The method of claim 1, further comprising, after the lining and before forming the second dielectric layer:
changing a physical property of a bottom portion of the first dielectric layer disposed at the bottom of the opening; and
after the changing, removing the bottom portion of the first dielectric layer from the bottom of the opening.

### Claim 7 (depends on 6)

The method of claim 6, wherein changing the physical property comprises treating the bottom portion of the first dielectric layer with a plasma process.

### Claim 8 (depends on 7)

The method of claim 7, wherein after the changing, an etch rate of the bottom portion of the first dielectric layer is increased.

### Claim 9 (depends on 8)

The method of claim 8, wherein removing the bottom portion of the first dielectric layer comprises performing a wet etch process to remove the bottom portion of the first dielectric layer.

### Claim 10 (depends on 6)

The method of claim 6, wherein the second dielectric layer is formed to extend deeper into the substrate than the first dielectric layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein upper sidewalls of the second dielectric layer are covered by the first dielectric layer, and lower sidewalls of the second dielectric layer are exposed by the first dielectric layer.

### Claim 12

A method for forming a semiconductor device, the method comprising:
forming an electrically conductive feature over a substrate;
forming an opening in the electrically conductive feature;
lining sidewalls and a bottom of the opening with a first dielectric material;
after the lining, modifying a physical property of the first dielectric material;
removing the first dielectric material from the bottom of the opening after the modifying; and
after the removing, forming a second dielectric material in the opening over remaining portions of the first dielectric material.

### Claim 13 (depends on 12)

The method of claim 12, wherein the modifying comprises performing an anisotropic plasma etching process to treat the first dielectric material.

### Claim 14 (depends on 13)

The method of claim 13, wherein the first dielectric material is formed to be thicker at a first sidewall location than at a second sidewall location, wherein the first sidewall location is proximate to an upper surface of the electrically conductive feature facing away from the substrate, and the second sidewall location is proximate to the bottom of the opening.

### Claim 15 (depends on 13)

The method of claim 13, wherein performing the anisotropic plasma etching process increases an etch rate of a bottom portion of the first dielectric material disposed at the bottom of the opening.

### Claim 16 (depends on 12)

The method of claim 12, wherein the first dielectric material and the second dielectric material form an insulating film stack that electrically isolates the electrically conductive feature into two separate structures.

### Claim 17 (depends on 12)

The method of claim 12, wherein removing the first dielectric material comprises performing a wet etch process.

### Claim 18

A semiconductor device comprising:
a substrate;
a first fin and a second fin that protrude above the substrate;
a first gate electrode over the first fin;
a second gate electrode over the second fin; and
an insulating film stack between and separating the first gate electrode and the second gate electrode, wherein the insulating film stack comprises:
a second dielectric material; and
a first dielectric material around the second dielectric material, wherein the first dielectric material extends directly along a first sidewall of the first gate electrode and a second sidewall of the second gate electrode, wherein the first dielectric material is different from the second dielectric material, wherein an upper portion of the first dielectric material distal from the substrate has a first thickness, wherein a lower portion of the first dielectric material closest to the substrate has a second thickness smaller than the first thickness.

### Claim 19 (depends on 18)

The semiconductor device of claim 18, wherein the first dielectric material is silicon nitride, and the second dielectric material is silicon oxide.

### Claim 20 (depends on 18)

The semiconductor device of claim 18, wherein an upper portion of the second dielectric material proximate to an upper surface of the first gate electrode distal from the substrate has a third thickness, wherein a lower portion of the second dielectric material proximate to a lower surface of the first gate electrode facing the substrate has a fourth thickness smaller than the third thickness, wherein the lower portion of the second dielectric material is embedded in the substrate.