# US 12,119,262 B2 · Semiconductor device structure with resistive element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,262 B2 - Document ID: US12119262B2 - Status: Granted - Kind: B2 - Application number: 18/333,124 - Filed: 2023-06-12 - Published: 2023-10-12 - Granted: 2024-10-15 - Earliest claimed: 2017-11-09 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Wen-Sheh Huang; Hsiu-Wen Hsueh; Yu-Hsiang Chen; Chii-Ping Chen - Web page: https://patentgrep.com/patent/US12119262B2 ## CPC - H10W 20/023: {the interconnections being through-semiconductor vias} - H10D 1/474: {comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides} - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D 84/817: {Combinations of field-effect devices and resistors only} - H10P 50/282: {of inorganic materials} - H10W 10/011: {of isolation regions comprising dielectric materials} - H10W 10/10: Isolation regions comprising dielectric materials - H10W 20/087: {involving multiple stacked pre-patterned masks} - H10W 20/498: {Resistive arrangements or effects of, or between, wiring layers} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device structure is provided. The semiconductor device structure includes a first dielectric layer and a first conductive feature and a second conductive feature surrounded by the first dielectric layer. The semiconductor device structure also includes a second dielectric layer over the first dielectric layer and a resistive element electrically connected to the first conductive feature. The second dielectric layer surrounds a portion of the resistive element. The semiconductor device structure further includes a conductive via electrically connected to the second conductive feature. The second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature. ## Claims ### Claim 1 A semiconductor device structure, comprising: a first dielectric layer; a first conductive feature and a second conductive feature surrounded by the first dielectric layer; a second dielectric layer over the first dielectric layer; a resistive element electrically connected to the first conductive feature, wherein the second dielectric layer surrounds a portion of the resistive element; and a conductive via electrically connected to the second conductive feature, wherein the second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature. ### Claim 2 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the resistive element has a first resistance, the conductive via has a second resistance, and the first resistance is greater than the second resistance. ### Claim 3 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the conductive via extends across opposite surfaces of the resistive element. ### Claim 4 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein topmost surfaces of the first conductive feature and the second conductive feature are substantially level with each other. ### Claim 5 (depends on 1) The semiconductor device structure as claimed in claim 1, further comprising: a barrier layer between the first conductive feature and the first dielectric layer, wherein the barrier layer contains nitrogen, the barrier layer has a first atomic concentration of nitrogen, the resistive element has a second atomic concentration of nitrogen, and the second atomic concentration of nitrogen is greater than the first atomic concentration of nitrogen. ### Claim 6 (depends on 1) The semiconductor device structure as claimed in claim 1, further comprising: a third dielectric layer surrounding the conductive via and covering the resistive element. ### Claim 7 (depends on 6) The semiconductor device structure as claimed in claim 6, wherein the third dielectric layer is in direct contact with the resistive element. ### Claim 8 (depends on 6) The semiconductor device structure as claimed in claim 6, wherein the second dielectric layer is thinner than the first dielectric layer, and the second dielectric layer is thinner than the third dielectric layer. ### Claim 9 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the first conductive feature extends across opposite edges of the resistive element. ### Claim 10 (depends on 1) The semiconductor device structure as claimed in claim 1, wherein the resistive element extends into the first conductive feature. ### Claim 11 A semiconductor device structure, comprising: a dielectric layer; a conductive feature laterally surrounded by the dielectric layer; a barrier layer between the conductive feature and the dielectric layer, wherein the barrier layer contains nitrogen; and a resistive element electrically connected to the conductive feature, wherein the resistive element has a first resistance, the barrier layer has a second resistance, and the first resistance is higher than the second resistance. ### Claim 12 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein the barrier layer has a first atomic concentration of nitrogen, the resistive element has a second atomic concentration of nitrogen, and the second atomic concentration of nitrogen is higher than the first atomic concentration of nitrogen. ### Claim 13 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein the resistive element is physically separated from the barrier layer. ### Claim 14 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein a contact area between the resistive element and the conductive feature has a first width and a second width, the first width is measured along a first direction, the second width is measured along a second direction perpendicular to the first direction, and the first width is greater than the second width. ### Claim 15 (depends on 11) The semiconductor device structure as claimed in claim 11, wherein the conductive feature extends across opposite edges of the resistive element, and the resistive element extends across opposite edges of the conductive feature. ### Claim 16 A semiconductor device structure, comprising: a conductive feature; a first dielectric layer laterally surrounding the conductive feature; a resistive element electrically connected to the conductive feature; a conductive via extending across a topmost surface of the resistive element, wherein a contact area between the resistive element and the conductive feature is wider than the conductive via; and a second dielectric layer over the first dielectric layer, wherein the second dielectric layer laterally surrounds a portion of the resistive element and a portion of the conductive via. ### Claim 17 (depends on 16) The semiconductor device structure as claimed in claim 16, further comprising: a barrier layer between the conductive feature and the first dielectric layer, wherein the barrier layer contains nitrogen, the resistive element has a first resistance, the barrier layer has a second resistance, and the first resistance is higher than the second resistance. ### Claim 18 (depends on 17) The semiconductor device structure as claimed in claim 17, wherein the resistive element has a higher atomic concentration of nitrogen than that of the barrier layer. ### Claim 19 (depends on 16) The semiconductor device structure as claimed in claim 16, wherein the contact area between the resistive element and the conductive feature has a first width and a second width, the first width is measured along a first direction, the second width is measured along a second direction perpendicular to the first direction, and the first width is greater than the second width. ### Claim 20 (depends on 19) The semiconductor device structure as claimed in claim 19, wherein the contact area is rectangular.