# US 12,119,235 B2 · Methods of manufacture of semiconductor devices having redistribution layer using dielectric material having photoactive component

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- Number: US 12,119,235 B2
- Document ID: US12119235B2
- Status: Granted
- Kind: B2
- Application number: 17/245,856
- Filed: 2021-04-30
- Published: 2022-05-05
- Granted: 2024-10-15
- Earliest claimed: 2020-11-04
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Wei-Chih Chen; Yu-Hsiang Hu; Hung-Jui Kuo; Sih-Hao Liao
- Web page: https://patentgrep.com/patent/US12119235B2

## CPC

- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/614: {the multiple chips being integrally enclosed}
- G03F 7/70: {Microphotolithographic exposure; Apparatus therefor (photo-masks G03F1/00)}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/095: {of vias therein}
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/685: comprising multiple insulating layers
- H10W 70/69: Insulating materials thereof
- H10W 70/695: Organic materials
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10F 39/809: {of hybrid image sensors}
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers}
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 70/655: Fan-out layouts
- H10W 70/692: Ceramics or glasses
- H10W 90/00: Package configurations
- H10W 90/22: the stacked chips being on both top and bottom sides of a package substrate, interposer or RDL
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A passivation layer and conductive via are provided, wherein the transmittance of an imaging energy is increased within the material of the passivation layer. The increase in transmittance allows for a greater cross-linking that helps to increase control over the contours of openings formed within the passivation layer. Once the openings are formed, the conductive vias can be formed within the openings.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, the method comprising:
forming a redistribution layer over a substrate;
applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, the first dielectric material comprising:
a first photoactive compound (PAC) with the following structure:
a second PAC with at least two rings, the second PAC having the following structure:
imaging the first dielectric material with the first energy.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first dielectric material has a thickness of between 20 μm and 60 μm.

### Claim 3 (depends on 2)

The method of claim 2, wherein the redistribution layer has a thickness of greater than or equal to 20 μm.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first dielectric material has a concentration of photoactive components of less than 15%-wt.

### Claim 5 (depends on 4)

The method of claim 4, further comprising developing the first dielectric material, wherein after the developing the first dielectric material a first opening has a taper angle of between 55° and 78°.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first dielectric material has a concentration of photoactive components of less than 5%-wt.

### Claim 7 (depends on 6)

The method of claim 6, further comprising developing the first dielectric material to form a first opening, the first opening being a via hole, wherein after the developing the first dielectric material the via hole has a taper angle of 78°, wherein the imaging the first dielectric material with the first energy initiates cross-linking.

### Claim 8

A method of manufacturing a semiconductor device, the method comprising:
forming a redistribution layer over a substrate;
applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, wherein the first dielectric material comprises:
a first photoactive compound (PAC) with the following structure:
a second PAC having the following structure:
wherein n is between 1 and 1000; and
imaging the first dielectric material with the first energy.

### Claim 9 (depends on 8)

The method of claim 8, wherein the first dielectric material has a thickness of between 20 μm and 60 μm.

### Claim 10 (depends on 9)

The method of claim 9, wherein the redistribution layer has a thickness of greater than or equal to 20 μm.

### Claim 11 (depends on 8)

The method of claim 8, wherein the first dielectric material has a concentration of photoactive components of less than 15%-wt.

### Claim 12 (depends on 11)

The method of claim 11, further comprising developing the first dielectric material, wherein after the developing the first dielectric material a first opening has a taper angle of between 55° and 78°.

### Claim 13 (depends on 8)

The method of claim 8, wherein the first dielectric material has a concentration of photoactive components of less than 5%-wt.

### Claim 14 (depends on 13)

The method of claim 13, further comprising developing the first dielectric material to form a first opening, the first opening being a via hole, wherein after the developing the first dielectric material the via hole has a taper angle of 78°, wherein the imaging the first dielectric material with the first energy initiates cross-linking.

### Claim 15

A method of manufacturing a semiconductor device, the method comprising:
forming a redistribution layer over a substrate, the substrate comprising aluminum nitride;
applying a first dielectric material to the redistribution layer and the substrate, wherein the first dielectric material has a transmittance to a first energy of greater than 0.5%, the first dielectric material comprising multiple different photoactive compounds (PACs) with different numbers of rings, each of the multiple different PACs having at least one ring;
imaging the first dielectric material with the first energy; and
removing a film tape from the substrate, wherein the removing the film tape exposes a conductive element extending through the substrate.

### Claim 16 (depends on 15)

The method of claim 15, wherein the first dielectric material has a thickness of between 20 μm and 60 μm.

### Claim 17 (depends on 16)

The method of claim 16, wherein the redistribution layer has a thickness of greater than or equal to 20 μm.

### Claim 18 (depends on 15)

The method of claim 15, wherein the first dielectric material has a concentration of photoactive components of less than 15%-wt.

### Claim 19 (depends on 18)

The method of claim 18, further comprising developing the first dielectric material, wherein after the developing the first dielectric material a first opening has a taper angle of between 55° and 78°.

### Claim 20 (depends on 15)

The method of claim 15, wherein the first dielectric material has a concentration of photoactive components of less than 5%-wt.