# US 12,119,233 B2 · Etching method

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- Number: US 12,119,233 B2
- Document ID: US12119233B2
- Status: Granted
- Kind: B2
- Application number: 17/595,416
- Filed: 2021-01-12
- Published: 2022-06-23
- Granted: 2024-10-15
- Earliest claimed: 2020-01-30
- Assignees: Resonac Corporation
- Applicants: Showa Denko K.K.
- Inventors: Kazuma Matsui
- Web page: https://patentgrep.com/patent/US12119233B2

## CPC

- H10P 50/283: {by chemical means}
- H10P 50/285: {of materials not containing Si, e.g. PZT or Al2O3}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An etching method capable of selectively etching an oxide, which method includes an etching step in which an etching target (12) including an oxide is placed in a chamber (10), and the oxide included in the etching target (12) is etched in the chamber (10) using an etching gas containing a fluorine-containing compound including a functional group represented by the chemical formula below: wherein a symbol * means a bonding point with another atom or atomic group. The oxide is at least one of a metal oxide or a semimetal oxide. Further, in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber (10).

## Claims

### Claim 1

An etching method comprising an etching step in which an etching target including an oxide is placed in a chamber, and the oxide included in the etching target is etched in the chamber by using an etching gas containing a fluorine-containing compound including a functional group represented by a chemical formula below,
wherein the oxide is at least one of a metal oxide or a semimetal oxide;
wherein in the etching step, the etching is performed without generating a plasma of the etching gas in the chamber; and,
wherein in the chemical formula below, a symbol * means a bonding point with another atom or atomic group:

### Claim 2 (depends on 1)

The etching method according to claim 1, wherein in the etching step, the etching is performed with the etching gas without using the plasma of the etching gas.

### Claim 3 (depends on 1)

The etching method according to claim 1, wherein a plasma generation source is located at a position away from the chamber, and in the etching step, the etching is performed in the chamber by the plasma of the etching gas generated outside the chamber by the plasma generation source.

### Claim 4 (depends on 1)

The etching method according to claim 1, wherein the fluorine-containing compound has from 1 to 5 carbon atoms.

### Claim 5 (depends on 1)

The etching method according to claim 1, wherein the fluorine-containing compound has from 1 to 3 carbon atoms.

### Claim 6 (depends on 1)

The etching method according to claim 1, wherein the fluorine-containing compound is at least one of carbonyl fluoride or oxalyl fluoride.

### Claim 7 (depends on 1)

The etching method according to claim 1, wherein a metal of the metal oxide contains at least one selected from tungsten, titanium, tantalum, ruthenium, iridium, and rhodium.

### Claim 8 (depends on 1)

The etching method according to claim 1, wherein a semimetal of the semimetal oxide contains silicon.

### Claim 9 (depends on 2)

The etching method according to claim 2, wherein the fluorine-containing compound has from 1 to 5 carbon atoms.

### Claim 10 (depends on 3)

The etching method according to claim 3, wherein the fluorine-containing compound has from 1 to 5 carbon atoms.

### Claim 11 (depends on 2)

The etching method according to claim 2, wherein the fluorine-containing compound has from 1 to 3 carbon atoms.

### Claim 12 (depends on 3)

The etching method according to claim 3, wherein the fluorine-containing compound has from 1 to 3 carbon atoms.

### Claim 13 (depends on 2)

The etching method according to claim 2, wherein the fluorine-containing compound is at least one of carbonyl fluoride or oxalyl fluoride.

### Claim 14 (depends on 3)

The etching method according to claim 3, wherein the fluorine-containing compound is at least one of carbonyl fluoride or oxalyl fluoride.

### Claim 15 (depends on 2)

The etching method according to claim 2, wherein a metal of the metal oxide contains at least one selected from tungsten, titanium, tantalum, ruthenium, iridium, and rhodium.

### Claim 16 (depends on 3)

The etching method according to claim 3, wherein a metal of the metal oxide contains at least one selected from tungsten, titanium, tantalum, ruthenium, iridium, and rhodium.

### Claim 17 (depends on 4)

The etching method according to claim 4, wherein a metal of the metal oxide contains at least one selected from tungsten, titanium, tantalum, ruthenium, iridium, and rhodium.

### Claim 18 (depends on 5)

The etching method according to claim 5, wherein a metal of the metal oxide contains at least one selected from tungsten, titanium, tantalum, ruthenium, iridium, and rhodium.

### Claim 19 (depends on 6)

The etching method according to claim 6, wherein a metal of the metal oxide contains at least one selected from tungsten, titanium, tantalum, ruthenium, iridium, and rhodium.

### Claim 20 (depends on 2)

The etching method according to claim 2, wherein a semimetal of the semimetal oxide contains silicon.