# US 12,119,228 B2 · Deposition method

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- Number: US 12,119,228 B2
- Document ID: US12119228B2
- Status: Granted
- Kind: B2
- Application number: 17/845,325
- Filed: 2022-06-21
- Published: 2022-10-13
- Granted: 2024-10-15
- Earliest claimed: 2018-01-19
- Assignees: ASM IP Holding B.V.
- Applicants: ASM IP Holding B.V.
- Inventors: Chiyu Zhu; Henri Jussila; Qi Xie
- Web page: https://patentgrep.com/patent/US12119228B2

## CPC

- C23C 16/02: Pretreatment of the material to be coated (C23C16/04 takes precedence)
- H10P 14/418: {the conductive layers comprising transition metals}
- C23C 16/0227: {by cleaning or etching}
- C23C 16/04: Coating on selected surface areas, e.g. using masks
- C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers}
- C23C 16/45553: {characterized by the use of precursors specially adapted for ALD}
- H10P 14/432: {using selective deposition}
- H10W 20/057: {by selectively depositing, e.g. by using selective CVD or plating}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of selectively depositing a material on a substrate with a first and second surface, the first surface being different than the second surface. The depositing of the material on the substrate comprises: supplying a bulk precursor comprising metal atoms, halogen atoms and at least one additional atom not being a metal or halogen atom to the substrate; and supplying a reactant to the substrate. The bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface.

## Claims

### Claim 1

A method of selectively depositing a metal on a substrate, the method comprising:
providing a substrate comprising a gap with a first surface at a bottom of the gap and a second surface at a top of the gap, the first surface being different than the second surface;
depositing the metal on the substrate by repeating the steps of:
supplying a bulk precursor comprising a transition metal atom, a halogen atom, and at least one chalcogen atom; and
supplying a reactant to the substrate, whereby the bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface to thereby fill the gap with the metal.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more than 5 times more material on the first surface than on the second surface.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the bulk precursor consists of one or more of the metal atoms, one or more of the halogen atoms, and the at least one chalcogen atom.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the transition metal atom is molybdenum.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the halogen atom is chloride.

### Claim 6 (depends on 1)

The method according to claim 1, wherein the first surface comprises cobalt tungsten phosphide, titanium nitride, tantalum nitride, or aluminum.

### Claim 7 (depends on 1)

The method according to claim 1, wherein the at least one chalcogen atom comprises oxygen.

### Claim 8 (depends on 1)

The method according to claim 1, further comprising supplying a preparation precursor to the substrate, wherein the preparation precursor comprises the metal atom and/or the halogen atoms to clean the first surface.

### Claim 9 (depends on 1)

The method according to claim 1, wherein the reactant comprises hydrogen atoms.

### Claim 10

A method of selectively depositing a transition metal on a substrate, the method comprising:
providing a substrate with a gap having a bottom comprising a first surface and a top comprising a second surface, the first surface being different than the second surface;
depositing the transition metal on the substrate by:
supplying a bulk precursor comprising a transition metal atom, a halogen atom, and at least one additional atom not being a metal or halogen atom; and
supplying a reactant to the substrate, whereby the bulk precursor and the reactant have a reaction with the first surface relative to the second surface to form more material on the first surface than on the second surface to thereby fill the gap with the transition metal,
wherein the reactant comprises hydrogen atoms.

### Claim 11 (depends on 10)

The method according to claim 10, wherein the first surface comprises a metal.

### Claim 12 (depends on 11)

The method according to claim 11, wherein the metal comprises a transition metal.

### Claim 13 (depends on 12)

The method according to claim 12, wherein the transition metal is selected form the group of titanium (Ti), tantalum (Ta), manganese (Mn), tungsten (W), Ruthenium (Ru), Cobalt (Co), and Cupper (Cu).

### Claim 14 (depends on 12)

The method according to claim 12, wherein the first surface comprises a transition metal nitride.

### Claim 15 (depends on 10)

The method according to claim 10, wherein the second surface comprises an oxide, nitride, or combination thereof.

### Claim 16 (depends on 10)

The method according to claim 10, wherein the second surface is selected from the group of AlOx, SiOx, SIN, HfO2, ZrO2 and SiON.

### Claim 17 (depends on 10)

The method according to claim 10, wherein the second surface is a dielectric surface.

### Claim 18 (depends on 10)

The method according to claim 10, wherein before supplying the bulk precursor, the method comprises pulsing a preparation precursor into a reaction chamber between 10 and 2000 times, the preparation precursor comprising a transition metal and a halogen, to the substrate to remove contamination from the first surface.

### Claim 19 (depends on 18)

The method according to claim 18, wherein the bulk precursor and the preparation precursor are different, and wherein the bulk precursor and the preparation precursor comprise the same halogen.

### Claim 20 (depends on 18)

The method according to claim 18, wherein the transition metal is selected from the group of transition metals comprising tungsten (W), Ruthenium (Ru), Cobalt (Co), and Cupper (Cu).