# US 12,119,227 B2 · Semiconductor apparatus and manufacturing method of semiconductor apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,227 B2 - Document ID: US12119227B2 - Status: Granted - Kind: B2 - Application number: 17/456,382 - Filed: 2021-11-24 - Published: 2022-03-17 - Granted: 2024-10-15 - Earliest claimed: 2019-12-18 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Kosuke Yoshida; Takashi Yoshimura; Hiroshi Takishita; Misaki Uchida; Michio Nemoto; Nao Suganuma; Motoyoshi Kubouchi - Web page: https://patentgrep.com/patent/US12119227B2 ## CPC - H10P 30/21: {of electrically active species} - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 8/50: PIN diodes - H10D 12/038: {having a recessed gate, e.g. trench-gate IGBTs} - H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs} - H10D 30/021: {of FETs having insulated gates [IGFET]} - H10D 30/60: Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) - H10D 62/53: the imperfections being within the semiconductor body - H10D 62/60: Impurity distributions or concentrations - H10D 84/00: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers - H10D 84/0126: {the components including insulated gates, e.g. IGFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10P 30/28: characterised by an annealing step, e.g. for activation of dopants - H10P 74/20: characterised by the properties tested or measured, e.g. structural or electrical properties - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/112: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices} - H10D 64/112: {comprising multiple field plate segments} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/519: {characterised by their top-view geometrical layouts} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10−5 to 7×10−4. A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×1012/cm3 to 5×1014/cm3. ## Claims ### Claim 1 A semiconductor apparatus comprising: a semiconductor substrate having an upper surface and a lower surface and containing oxygen; a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate, wherein an oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10−5 to 7×10−4, a concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration, and a hydrogen donor concentration in the flat portion ranges from 2×1012/cm3 to 5×1014/cm3. ### Claim 2 (depends on 1) The semiconductor apparatus according to claim 1, wherein the semiconductor substrate contains a bulk donor, and a donor concentration of the flat portion is higher than a bulk donor concentration. ### Claim 3 (depends on 2) The semiconductor apparatus according to claim 2, wherein a sum of a value obtained by multiplying an oxygen chemical concentration in the flat portion by the oxygen contribution ratio and a vacancy concentration of the flat portion is defined as a first value of the hydrogen donor concentration, a difference obtained by subtracting the bulk donor concentration from a donor concentration of the flat portion is defined as a second value of the hydrogen donor concentration, and a ratio of the first value of the hydrogen donor concentration to the second value of the hydrogen donor concentration ranges from 0.1 to 10. ### Claim 4 (depends on 1) The semiconductor apparatus according to claim 1, further comprising: a second peak of a chemical concentration of hydrogen or helium disposed on the upper surface side of the semiconductor substrate, wherein the flat portion is disposed closer to the lower surface side of the semiconductor substrate than the second peak. ### Claim 5 (depends on 1) The semiconductor apparatus according to claim 1, wherein a hydrogen contribution ratio indicating a ratio of the hydrogen chemical concentration contributing to generation of the hydrogen donor in the hydrogen chemical concentration ranges from 0.001 to 0.3. ### Claim 6 (depends on 1) The semiconductor apparatus according to claim 1, wherein a vacancy concentration of the flat portion ranges from 1×1011/cm3 to 1×1014/cm3. ### Claim 7 (depends on 1) The semiconductor apparatus according to claim 1, wherein the oxygen contribution ratio is 5×10−4 or less. ### Claim 8 (depends on 1) The semiconductor apparatus according to claim 1, wherein the oxygen contribution ratio is 1×10−4 or more. ### Claim 9 (depends on 4) The semiconductor apparatus according to claim 4, wherein the hydrogen chemical concentration of the first peak is higher than the hydrogen chemical concentration of the second peak. ### Claim 10 (depends on 1) The semiconductor apparatus according to claim 1, wherein an oxygen chemical concentration in the flat portion is 1×1017 atoms/cm3 or more. ### Claim 11 (depends on 1) The semiconductor apparatus according to claim 1, wherein a carbon chemical concentration in the flat portion ranges from 1×1013 atoms/cm3 to 1×1016 atoms/cm3. ### Claim 12 A semiconductor apparatus comprising: a semiconductor substrate having an upper surface and a lower surface and containing oxygen; a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate, wherein the semiconductor substrate contains a bulk donor, a donor concentration of the flat portion is higher than a bulk donor concentration, a sum of a value obtained by multiplying an oxygen chemical concentration in the flat portion by an oxygen contribution ratio indicating a ratio of the oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen and a vacancy concentration of the flat portion is defined as a first value of a hydrogen donor concentration, a difference obtained by subtracting the bulk donor concentration from a donor concentration of the flat portion is defined as a second value of the hydrogen donor concentration, and a ratio of the first value of the hydrogen donor concentration to the second value of the hydrogen donor concentration ranges from 0.1 to 10. ### Claim 13 A semiconductor apparatus comprising: a semiconductor substrate having an upper surface and a lower surface and containing oxygen and carbon; a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially flat donor concentration distribution in a depth direction of the semiconductor substrate, wherein the semiconductor substrate contains a bulk donor, a donor concentration of the flat portion is higher than a bulk donor concentration, a sum of a value obtained by multiplying an oxygen chemical concentration in the flat portion by an oxygen contribution ratio indicating a ratio of the oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen, a value obtained by multiplying a carbon chemical concentration in the flat portion by a carbon contribution ratio indicating a ratio of the carbon chemical concentration contributing to generation of the hydrogen donor in the carbon chemical concentration of the carbon, and a vacancy concentration of the flat portion is defined as a third value of a hydrogen donor concentration, a difference obtained by subtracting the bulk donor concentration from the donor concentration of the flat portion is defined as a second value of the hydrogen donor concentration, and a ratio of the third value of the hydrogen donor concentration to the second value of the hydrogen donor concentration ranges from 0.1 to 10.