# US 12,119,224 B2 · SAG nanowire growth with ion implantation

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- Number: US 12,119,224 B2
- Document ID: US12119224B2
- Status: Granted
- Kind: B2
- Application number: 17/901,405
- Filed: 2022-09-01
- Published: 2023-01-05
- Granted: 2024-10-15
- Earliest claimed: 2020-05-29
- Assignees: Microsoft Technology Licensing, LLC
- Applicants: Microsoft Technology Licensing, LLC
- Inventors: Geoffrey C. Gardner; Sergei V. Gronin; Raymond L. Kallaher; Michael James Manfra
- Web page: https://patentgrep.com/patent/US12119224B2

## CPC

- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/3462: {Nanowires}
- H10D 62/119: {Nanowire, nanosheet or nanotube semiconductor bodies}
- H10N 60/01: Manufacture or treatment
- H10P 14/27: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials}
- H10P 14/2923: {being conductive materials, e.g. metallic silicides}
- H10P 30/20: into semiconductor materials, e.g. for doping
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

The present disclosure relates to a nanowire structure, which includes a substrate with a substrate body and an ion implantation region, a patterned mask with an opening over the substrate, and a nanowire. Herein, the substrate body is formed of a conducting material, and the ion implantation region that extends from a top surface of the substrate body into the substrate body is electrically insulating. A surface portion of the substrate body is exposed through the opening of the patterned mask, while the ion implantation region is fully covered by the patterned mask. The nanowire is directly formed over the exposed surface portion of the substrate body and is not in contact with the ion implantation region. Furthermore, the nanowire is confined within the ion implantation region, such that the ion implantation region is configured to provide a conductivity barrier of the nanowire in the substrate.

## Claims

### Claim 1

A method for manufacturing a nanowire structure comprising:
providing a substrate body, which is formed of a conducting material;
providing an implantation mask with an implantation opening over the substrate body, wherein a processing surface portion of a top surface of the substrate body is exposed through the implantation opening of the implantation mask;
applying ion implantation to the substrate body through the implantation opening, such that a portion of the substrate body, which extends from the exposed processing surface portion into the substrate body, is converted to an ion implantation region, wherein the ion implantation region is electrically insulating;
removing the implantation mask;
providing a patterned mask with a nanowire opening over the substrate body and the ion implantation region, wherein:
the patterned mask fully covers the ion implantation region; and
a nanowire surface portion of the top surface of the substrate body is exposed through the nanowire opening of the patterned mask; and
forming a nanowire over the exposed nanowire surface portion of the substrate body through the nanowire opening of the patterned mask, wherein:
the nanowire is not in contact with the ion implantation region; and
the nanowire is confined within the ion implantation region, such that the ion implantation region is configured to provide a conductivity barrier of the nanowire in the substrate.

### Claim 2 (depends on 1)

The method of claim 1 wherein the ion implantation is applied by implanting oxygen ions into the substrate body through the implantation opening.

### Claim 3 (depends on 1)

The method of claim 1 wherein the ion implantation region has a closed-loop shape.

### Claim 4 (depends on 1)

The method of claim 1 wherein:
the substrate body is formed of one of indium arsenide, indium antimonide, gallium antimonide, and indium gallium arsenide; and
the nanowire is formed of one of indium arsenide, indium antimonide, and indium arsenide antimonide.

### Claim 5 (depends on 1)

The method of claim 1 wherein:
the substrate body has a thickness between 50 μm and 1000 μm; and
the ion implantation region has a depth between 2 nm and 50 μm.

### Claim 6 (depends on 1)

The method of claim 1 further comprising providing a superconductor layer on the nanowire.

### Claim 7 (depends on 1)

The method of claim 1 further comprising planarizing the top surface of substrate body after removing the implantation mask and before providing the patterned mask.