# US 12,119,223 B2 · Single precursor low-k film deposition and UV cure for advanced technology node > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,119,223 B2 - Document ID: US12119223B2 - Status: Granted - Kind: B2 - Application number: 17/624,009 - Filed: 2021-12-21 - Published: 2023-05-11 - Granted: 2024-10-15 - Earliest claimed: 2020-12-27 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Bo Xie; Ruitong Xiong; Sure K. Ngo; Kang Sub Yim; Yijun Liu; Li-Qun Xia - Web page: https://patentgrep.com/patent/US12119223B2 ## CPC - H10P 14/6538: {by exposure to UV light} - C23C 16/401: {containing silicon} - C23C 16/505: using radio frequency discharges - C23C 16/56: After-treatment - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane} - H10P 14/69215: {the material being a silicon oxide, e.g. SiO2} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light. ## Claims ### Claim 1 A method of forming a low-k film, the method comprising: depositing a siloxane film on a substrate surface by exposing the substrate surface to a siloxane precursor comprising O—Si—O bonds, the siloxane film having an initial CH content and an initial dielectric constant; and curing the siloxane film by exposing the siloxane film to ultraviolet light to form a low-k film, the low-k film having a cured CH content and cured silicon cage to silicon network ratio, the cured CH content lower than the initial CH content. ### Claim 2 (depends on 1) The method of claim 1, wherein the siloxane film is deposited at a temperature in the range of 100° C. to 450° C. ### Claim 3 (depends on 1) The method of claim 1, wherein the siloxane film is deposited at a pressure in the range of 0.5 to 500 Torr. ### Claim 4 (depends on 1) The method of claim 1, wherein the substrate surface is spaced from a showerhead by an amount in the range of 200 to 1000 mils. ### Claim 5 (depends on 1) The method of claim 1, wherein the siloxane film is deposited using an RF plasma with a frequency greater than or equal to 13.56 MHz and a power in the range of 50 to 1000 W. ### Claim 6 (depends on 1) The method of claim 1, wherein curing the siloxane film occurs at a temperature in the range of 75 to 500° C. ### Claim 7 (depends on 1) The method of claim 1, wherein the siloxane film is exposed to the ultraviolet light for a time in the range of 1 to 10 min. ### Claim 8 (depends on 1) The method of claim 1, wherein the siloxane film is cured in an inert environment at a pressure in the range of 3 to 100 Torr. ### Claim 9 (depends on 8) The method of claim 8, wherein the inert environment comprises helium and argon. ### Claim 10 (depends on 9) The method of claim 9, wherein the helium is flowed at a rate in the range of 1000 to 20000 sccm. ### Claim 11 (depends on 9) The method of claim 9, wherein the argon is flowed at a rate in the range of 1000 to 20000 sccm. ### Claim 12 (depends on 1) The method of claim 1, wherein the initial CH content is greater than 4.5%. ### Claim 13 (depends on 12) The method of claim 12, wherein the cured CH content is in the range of 1.25 to 4.5%. ### Claim 14 (depends on 1) The method of claim 1, wherein the initial dielectric constant is greater than 3.5. ### Claim 15 (depends on 14) The method of claim 14, wherein the low-k film has a dielectric constant in the range of 2.8 to 3.5. ### Claim 16 (depends on 1) The method of claim 1, wherein the siloxane film has a hardness less than 2 GPa. ### Claim 17 (depends on 16) The method of claim 16, wherein the low-k film has a hardness in the range of 2.0 to 7.5 GPa. ### Claim 18 (depends on 1) The method of claim 1, wherein the siloxane precursor comprises one or more of ### Claim 19 A method of forming a low-k film, the method comprising: depositing a siloxane film on a substrate surface by exposing the substrate surface to a siloxane precursor comprising O—Si—O bonds with an RF plasma with a frequency greater than or equal to 13.56 MHz and a power in the range of 50 to 1000 W at a temperature in the range of 200° C. to 350° C., the siloxane film having an initial CH content greater than 4.5%, a hardness less than 2 GPa and an initial dielectric constant greater than 3.5; and curing the siloxane film by exposing the siloxane film to ultraviolet light in an inert environment comprising helium and argon at a pressure in the range of 3 to 100 Torr, at a temperature in the range of 150° C. to 400° C. for a time in the range of 1 to 10 minutes to form a low-k film, the low-k film having a cured CH content and cured silicon cage to silicon network ratio, the cured CH content lower than the initial CH content. ### Claim 20 (depends on 19) The method of claim 19, wherein the low-k film has a cured CH content in the range of 1.25 to 4.5%, a dielectric constant in the range of 2.8 to 3.5, a hardness in the range of 2.0 to 7.5 GPa.