# US 12,119,219 B2 · Film forming method, method for manufacturing semiconductor device, film forming device, and system for manufacturing semiconductor device

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- Number: US 12,119,219 B2
- Document ID: US12119219B2
- Status: Granted
- Kind: B2
- Application number: 17/594,029
- Filed: 2020-03-26
- Published: 2022-05-19
- Granted: 2024-10-15
- Earliest claimed: 2019-04-11
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Hiroaki Ashizawa; Hideo Nakamura; Yosuke Serizawa; Yoshikazu Ideno
- Web page: https://patentgrep.com/patent/US12119219B2

## CPC

- H10P 14/69394: {the material containing titanium, e.g. TiO2}
- C23C 16/34: Nitrides {(C23C16/303 takes precedence)}
- C23C 16/345: {Silicon nitride}
- C23C 16/4408: {by purging residual gases from the reaction chamber or gas lines}
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45551: {for relative movement of the substrate and the gas injectors or half-reaction reactor compartments}
- C23C 16/4584: {the substrate being rotated}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- H10P 14/432: {using selective deposition}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 14/69396: {the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10P 72/7612: {characterised by lifting arrangements, e.g. lift pins}
- H10W 20/033: {in openings in dielectrics}
- H10P 72/0454: {surrounding a central transfer chamber}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of forming a group V metal nitride film on a substrate includes: providing the substrate within a processing container; and forming the group V metal nitride film on the substrate by alternately supplying, into the processing container, a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, the method comprising:
forming a seed layer on a surface of a substrate; and
forming a group V metal nitride film on the seed layer by alternately supplying a raw material gas including a group V metal and a reducing gas including a nitrogen-containing gas,
wherein the seed layer is one of a titanium nitride film or a silicon nitride film.

### Claim 2 (depends on 1)

The method of claim 1, wherein the titanium nitride film is formed on the substrate by alternately supplying a titanium-containing gas and the nitrogen-containing gas.

### Claim 3 (depends on 1)

The method of claim 1, wherein the seed layer has a thickness of 10 nm or less.

### Claim 4 (depends on 1)

The method of claim 1, wherein the raw material gas including the group V metal is a niobium fluoride, and the group V metal nitride film is a niobium nitride film.

### Claim 5 (depends on 1)

The method of claim 1, wherein the forming the seed layer and the forming the group V metal nitride film are performed within separate processing containers, respectively.

### Claim 6 (depends on 1)

The method of claim 1, wherein the forming the seed layer and the forming the group V metal nitride film are performed within a same processing container.